22 nanometer

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The 22 nanometer (22 nm) node is the process step following the 32 nm in CMOS semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm. It was first introduced by semiconductor companies in 2008 for use in memory products, while first consumer-level CPU deliveries started in April 2012.

The 32 nanometer (32 nm) node is the step following the 45 nanometer process in CMOS semiconductor device fabrication. "32 nanometer" refers to the average half-pitch of a memory cell at this technology level. Intel and AMD both produced commercial microchips using the 32 nanometer process in the early 2010s. IBM and the Common Platform also developed a 32 nm high-κ metal gate process. Intel began selling its first 32 nm processors using the Westmere architecture on 7 January 2010.

CMOS technology for constructing integrated circuits

Complementary metal–oxide–semiconductor (CMOS) is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors, data converters, and highly integrated transceivers for many types of communication. Frank Wanlass patented CMOS in 1963 while working for Fairchild Semiconductor.

Semiconductor device fabrication process used to create the integrated circuits that are present in everyday electrical and electronic devices

Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.

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The ITRS 2006 Front End Process Update indicates that equivalent physical oxide thickness will not scale below 0.5 nm (about twice the diameter of a silicon atom), which is the expected value at the 22 nm node. This is an indication that CMOS scaling in this area has reached a wall at this point, possibly disturbing Moore's law.

The International Technology Roadmap for Semiconductors (ITRS) is a set of documents produced by a group of semiconductor industry experts. These experts are representative of the sponsoring organisations which include the Semiconductor Industry Associations of the United States, Europe, Japan, South Korea and Taiwan.

Silicon Chemical element with atomic number 14

Silicon is a chemical element with symbol Si and atomic number 14. It is a hard and brittle crystalline solid with a blue-grey metallic lustre; and it is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, and lead are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its melting and boiling points of 1414 °C and 3265 °C respectively are the second-highest among all the metalloids and nonmetals, being only surpassed by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is most widely distributed in dusts, sands, planetoids, and planets as various forms of silicon dioxide (silica) or silicates. More than 90% of the Earth's crust is composed of silicate minerals, making silicon the second most abundant element in the Earth's crust after oxygen.

Atom smallest unit of a chemical element

An atom is the smallest constituent unit of ordinary matter that has the properties of a chemical element. Every solid, liquid, gas, and plasma is composed of neutral or ionized atoms. Atoms are extremely small; typical sizes are around 100 picometers.

20 nanometer is an intermediate half-node die shrink based on the 22 nanometer process.

The term die shrink refers to a simple semiconductor scaling of semiconductor devices, mainly transistors. The act of shrinking a die is to create a somewhat identical circuit using a more advanced fabrication process, usually involving an advance of lithographic node. This reduces overall costs for a chip company, as the absence of major architectural changes to the processor lowers research and development costs, while at the same time allowing more processor dies to be manufactured on the same piece of silicon wafer, resulting in less cost per product sold.

The 22 nm process was superseded by commercial 14 nm technology in 2014.

The 14 nanometer technology node is the successor to the 22 nm/(20 nm) node. The 14 nm was so named by the International Technology Roadmap for Semiconductors (ITRS). One nanometer (nm) is one billionth of a meter. Until about 2011, the node following 22 nm was expected to be 16 nm. The first 14 nm scale devices were shipped to consumers by Intel in 2014.

Technology demos

On August 18, 2008, AMD, Freescale, IBM, STMicroelectronics, Toshiba, and the College of Nanoscale Science and Engineering (CNSE) announced that they jointly developed and manufactured a 22 nm SRAM cell, built on a traditional six-transistor design on a 300 mm wafer, which had a memory cell size of just 0.1 μm 2. [1] The cell was printed using immersion lithography. [2]

IBM American multinational technology and consulting corporation

International Business Machines Corporation (IBM) is an American multinational information technology company headquartered in Armonk, New York, with operations in over 170 countries. The company began in 1911, founded in Endicott, New York, as the Computing-Tabulating-Recording Company (CTR) and was renamed "International Business Machines" in 1924.

STMicroelectronics French-Italian multinational electronics and semiconductor manufacturer headquartered in Schiphol, Amsterdam (Netherlands)

STMicroelectronics is a French-Italian multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. It is commonly called ST, and it is Europe's largest semiconductor chip maker based on revenue. While STMicroelectronics corporate headquarters and the headquarters for EMEA region are based in Geneva, the holding company, STMicroelectronics N.V. is registered in Amsterdam, Netherlands.

Toshiba Japanese multinational electronics, electrical equipment and information technology corporation

Toshiba Corporation is a Japanese multinational conglomerate headquartered in Tokyo, Japan. Its diversified products and services include information technology and communications equipment and systems, electronic components and materials, power systems, industrial and social infrastructure systems, consumer electronics, household appliances, medical equipment, office equipment, as well as lighting and logistics.

The 22 nm node may be the first time where the gate length is not necessarily smaller than the technology node designation. For example, a 25 nm gate length would be typical for the 22 nm node.

On September 22, 2009, during the Intel Developer Forum Fall 2009, Intel showed a 22 nm wafer and announced that chips with 22 nm technology would be available in the second half of 2011. [3] SRAM cell size is said to be 0.092 μm2, smallest reported to date.

Intel American semiconductor company

Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley. It is the world's second largest and second highest valued semiconductor chip manufacturer based on revenue after being overtaken by Samsung, and is the inventor of the x86 series of microprocessors, the processors found in most personal computers (PCs). Intel ranked No. 46 in the 2018 Fortune 500 list of the largest United States corporations by total revenue.

On January 3, 2010, Intel and Micron Technology announced the first in a family of 25 nm NAND devices.

On May 2, 2011, Intel announced its first 22 nm microprocessor, codenamed Ivy Bridge, using a FinFET technology called 3-D Tri-Gate. [4]

IBM's POWER8 processors are produced in a 22 nm SOI process. [5]

Shipping devices

Processors

On April 23, 2012, Intel Core i7 and Intel Core i5 processors based on Intel's Ivy Bridge 22 nm technology for series 7 chipsets went on sale worldwide. [6] Volume production of 22 nm processors began more than six months earlier, as confirmed by former Intel CEO Paul Otellini on October 19, 2011. [7]

On June 3, 2013, Intel started shipping Intel Core i7 and Intel Core i5 processors based on Intel's Haswell microarchitecture in 22 nm Tri-Gate FinFET technology for series 8 chipsets. [8]

Related Research Articles

Integrated circuit electronic circuit manufactured by lithography; set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon

An integrated circuit or monolithic integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material that is normally silicon. The integration of large numbers of tiny transistors into a small chip results in circuits that are orders of magnitude smaller, cheaper, and faster than those constructed of discrete electronic components. The IC's mass production capability, reliability and building-block approach to circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones, and other digital home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs.

Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire. The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short channel effects in microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application.

The 90 nanometer (90 nm) process refers to the level of CMOS process technology that was reached in the 2004–2005 timeframe, by most leading semiconductor companies, like Intel, AMD, Infineon, Texas Instruments, IBM, and TSMC.

FinFET semiconductor manufacturing process

A Fin Field-effect transistor (FinFET) is a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices have been given the generic name "finfets" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than the mainstream CMOS technology.

VLSI Technology, Inc., was a company that designed and manufactured custom and semi-custom integrated circuits (ICs). The company was based in Silicon Valley, with headquarters at 1109 McKay Drive in San Jose. Along with LSI Logic, VLSI Technology defined the leading edge of the application-specific integrated circuit (ASIC) business, which accelerated the push of powerful embedded systems into affordable products.

The 65-nanometerprocess is advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC, Chartered and TSMC were producing 65 nm chips.

Transistor count the number of transistors in a device

The transistor count is the number of transistors on an integrated circuit (IC). Transistor count is the most common measure of IC complexity, although there are caveats. For instance, the majority of transistors are contained in the cache memories in modern microprocessors, which consist mostly of the same memory cell circuits replicated many times. The rate at which transistor counts have increased generally follows Moore's law, which observed that the transistor count doubles approximately every two years. As of 2017, the largest transistor count in a commercially available single-chip processor is 19.2 billion— AMD's Ryzen-based Epyc. In other types of ICs, such as field-programmable gate arrays (FPGAs), Xilinx's Everest/Versal has the largest transistor count, containing around 50 billion transistors.

Nanocomputer refers to a computer smaller than the microcomputer, which is smaller than the minicomputer.

Multigate device

A multigate device or multiple-gate field-effect transistor (MuGFET) refers to a MOSFET that incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

In semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the 10 nanometer (10 nm) node as the technology node following the 14 nm node. "10 nm class" denotes chips made using process technologies between 10 and 20 nanometers.

GlobalFoundries is an American semiconductor foundry headquartered in Santa Clara, California, United States. GlobalFoundries was created by the divestiture of the manufacturing arm of Advanced Micro Devices (AMD) on March 2, 2009, expanded through the acquisition of Chartered Semiconductor on January 23, 2010, and further expanded through the acquisition of IBM Microelectronics on July 1, 2015. The Emirate of Abu Dhabi is the owner of the company through its subsidiary Advanced Technology Investment Company (ATIC). On March 4, 2012, AMD announced they divested their final 14% stake in the company, which concluded AMD's multi-year plan to divest its manufacturing arm.

Per the International Technology Roadmap for Semiconductors, the 45 nanometer (45 nm) technology node should refer to the average half-pitch of a memory cell manufactured at around the 2007–2008 time frame.

In semiconductor manufacturing, the International Roadmap for Devices and Systems defines the 5 nanometer (5 nm) node as the technology node following the 7 nm node.

In semiconductor manufacturing, the International Technology Roadmap for Semiconductors defines the 7 nanometer (7 nm) node as the technology node following the 10 nm node. Single transistor 7 nm scale devices were first produced in the early 2000s. While some claim that the node designation of "7 nm" has no physical meaning beyond marketing purposes, others point to transistor density as the real important number that is represented by these designations.

Beyond CMOS

Beyond CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits which limits device density and speeds due to heating effects.

Gary Patton

Dr. Gary Patton is an American technologist and business executive. He is currently the Chief Technology Officer and Senior Vice President of Worldwide Research and Development (R&D) at GlobalFoundries. He spent his early career at IBM, and he was appointed CTO of GlobalFoundries in 2015.

References

  1. TG Daily news report
  2. EETimes news report
  3. Intel announces 22nm chips for 2011
  4. Intel 22nm 3-D Tri-Gate Transistor Technology
  5. IBM opens Power8 kimono (a little bit more)
  6. Intel launches Ivy Bridge...
  7. Tom's Hardware: Intel to Sell Ivy Bridge Late in Q4 2011
  8. 4th Generation Intel® Core™ Processors Coming Soon
Preceded by
32 nm
CMOS manufacturing processes Succeeded by
14 nm