Chih-Tang Sah

Last updated
Chih-Tang Sah
BornNovember 1932 (1932-11) (age 87)
Alma mater Stanford University
University of Illinois at Urbana-Champaign
Scientific career
FieldsEngineering
Institutions University of Florida

Chih-Tang "Tom" Sah (simplified Chinese :萨支唐; traditional Chinese :薩支唐; pinyin :Sà Zhītáng; born in November 1932 in Beijing, China) is a Chinese-American electronics engineer. He is best known for inventing CMOS (complementary MOS) logic with Frank Wanlass at Fairchild Semiconductor in 1963. [1] CMOS is now used in nearly all modern very large-scale integration (VLSI) semiconductor devices. [2]

Contents

He is the Pittman Eminent Scholar [3] and a Graduate Research Professor at the University of Florida from 1988. He was a Professor of Physics and Professor of Electrical and Computer Engineering, emeritus, at the University of Illinois at Urbana-Champaign, where he taught for 26 years and guided 40 students to the Ph.D. degree in electrical engineering and in physics and 34 MS EE theses. At the University of Florida, he guided 10 doctoral theses in EE. He has published about 280 journal articles and presented about 170 invited lectures and 60 contributed papers in China, Europe, Japan, Taiwan and in the United States on transistor physics, technology and evolution. [4] [5]

He wrote a three-volume textbook titled Fundamentals of Solid State Electronics (FSSE 1991), FSSE-Study Guide (1993) and FSSE-Solution Manual (1996). The latter included 100 pages of exposition on Transistor Reliability. FSSE was translated into Chinese in 2003.

Biography

Sah is a member of the distinguished Fuzhou Sah Family, descendants of the prominent Yuan dynasty official Sadula, in Fuzhou China. His father Pen-Tung Sah was an academician of Academia Sinica and served as president of Xiamen University in the 1920s and 1930s. [6] C.-T. Sah also has a brother Chih-Han Sah who is a mathematician and professor at the State University of New York at Stony Brook. [7]

Sah received two B.S. degrees in 1953 in Electrical Engineering and Engineering Physics from the University of Illinois and the M.S. and Ph.D. degrees from Stanford University in 1954 and 1956, respectively. His doctoral thesis research was on traveling-wave tubes under the tutelage of Karl R. Spangenberg.

His industrial career in solid-state electronics began with William Shockley in 1956 and continued at Fairchild Semiconductor Corporation in Palo Alto from 1959 to 1964 until he became a professor of physics and electrical engineering at the University of Illinois for 25 years (1962–1988). Under the management of Gordon E. Moore, Victor H. Grinich and Robert N. Noyce at Fairchild, Sah directed a 64-member Fairchild Physics Department on the development of the first generation manufacturing technologies (oxidation, diffusion, epitaxy growth, and metal conductor thin film deposition) for volume production of silicon bipolar and MOS transistors and integrated circuit technology including oxide masking for impurity diffusion, stable Si MOS transistor, the CMOS circuit, origin of the low-frequency noise, the MOS transistor model used in the first circuit simulator, thin film integrated resistance and Si epitaxy process for bipolar integrated circuit production.

After the MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) was first demonstrated by Mohamed Atalla and Dawon Kahng of Bell Labs in early 1960, Sah introduced MOS technology to Fairchild Semiconductor with his MOS-controlled tetrode fabricated in late 1960. [8] In 1963, Sah invented the CMOS (complementary MOS) semiconductor device fabrication process with Frank Wanlass at Fairchild. [1] CMOS is now used in nearly all modern LSI and VLSI devices. [2]

He was the founding editor (1991) of the International Series on the Advances in Solid State Electronics and Technology (ASSET) which published three titles by invited authors (1990s) and is currently publishing six monographs (2007–2008) by invited authors on compact modelling of devices for computer aided design of integrated circuits, all with the World Scientific Publishing Company, Singapore. His current (2007) research has been on MOS transistor models since he was drafted in October 2004 by his young colleagues to join them, after 40 years of absence subsequent to the 1964-Sah, 1965-Sah-Pao and 1966-Pao-Sah journal articles on MOS transistor models, in order to help further in the development of compact models for computer aided design of nanometer MOS integrated circuits.

For contributions in transistor physics and technology, he received the Browder H. Thomson best paper Prize (IRE-1962) for an author under 30, the J. J. Ebers Award in Electron Devices (1981) and the Jack Morton Award (1989), all from the IEEE, the Franklin Institute Certificate of Merit, the First Achievement Award in High Technology from the Asian-American Manufacturer Association in San Jose, CA (1984) (co-recipient with Morris Chang), the Fourth Annual University Research Award of the Semiconductor Industry Association (1998), co recipient in integrated circuit technology (with Yung Cheng Fung) in bioengineering of the first Pioneer recognition Award of the Committee-of-100 (a Chinese-American citizen organization), the second annual Distinguished Lifetime Achievement Award of the Asian-American Engineer of the Year sponsored by the Chinese Institute of Engineering/USA (2003) and the Doctor Honoris Causa degree from the University of Leuven, Belgium (1975) and the Honorary Doctorate from Chiaotung University, Taiwan, R.O.C. (2004).

He was listed in a survey by the Institute for Scientific Information as one of the world's 1000 most cited scientists during 1963-1978. He is a Life Fellow of the American Physical Society, the Franklin Institute and the IEEE, a Fellow of the American Association for the Advancement of Science, a member of the U.S. National Academy of Engineering (1986), the Academia Sinica in Taipei (1998) and the Chinese Academy of Sciences in Beijing (2000). He was appointed an Honorary Professor of Tsinghua University (2003), Peking University (2003) and Xiamen University (2004) of China.

Honors and awards

Patents

Related Research Articles

Electrical engineering Field of engineering that deals with electricity

Electrical engineering is an engineering discipline concerned with the study, design and application of equipment, devices and systems which use electricity, electronics, and electromagnetism. It emerged as an identifiable occupation in the latter half of the 19th century after commercialization of the electric telegraph, the telephone, and electrical power generation, distribution and use.

Electronics physics, engineering, technology and applications that deal with the emission, flow and control of electrons in vacuum and matter

Electronics comprises the physics, engineering, technology and applications that deal with the emission, flow and control of electrons in vacuum and matter.

Integrated circuit electronic circuit manufactured by lithography; set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon

An integrated circuit or monolithic integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material that is normally silicon. The integration of large numbers of tiny MOS transistors into a small chip results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components. The IC's mass production capability, reliability, and building-block approach to circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones, and other digital home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs.

A logic gate is an idealized or physical electronic device implementing a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has for instance zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device.

Transistor Basic electronics component

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

MOSFET Transistor used for amplifying or switching electronic signals.

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The MOSFET was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in November 1959. It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion (1.3 × 1022) MOSFETs manufactured between 1960 and 2018.

N-type metal-oxide-semiconductor logic uses n-type (-) MOSFETs to implement logic gates and other digital circuits. These nMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type "source" and "drain" terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off, triode, saturation, and velocity saturation.

CMOS Technology for constructing integrated circuits

Complementary metal–oxide–semiconductor (CMOS), also known as complementary-symmetry metal–oxide–semiconductor (COS-MOS), is a type of MOSFET fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors, data converters, RF circuits, and highly integrated transceivers for many types of communication.

Dr. Frank Marion Wanlass was an American electrical engineer. He is best known for inventing CMOS logic with Chih-Tang Sah in 1963. CMOS has since become the standard semiconductor device fabrication process for MOSFETs.

Planar process

The planar process is a manufacturing process used in the semiconductor industry to build individual components of a transistor, and in turn, connect those transistors together. It is the primary process by which silicon integrated circuit chips are built. The process utilizes the surface passivation and thermal oxidation methods.

p–n junction isolation is a method used to electrically isolate electronic components, such as transistors, on an integrated circuit (IC) by surrounding the components with reverse biased p–n junctions.

History of electrical engineering aspect of history

This article details the history of electrical engineering.

Active-pixel sensor image sensor consisting of an integrated circuit

An active-pixel sensor (APS) is an image sensor where each pixel sensor unit cell has a photodetector and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the much more common complementary MOS (CMOS) APS, also known as the CMOS sensor, which is widely used in digital camera technologies such as cell phone cameras, web cameras, most modern digital pocket cameras, most digital single-lens reflex cameras (DSLRs), and mirrorless interchangeable-lens cameras (MILCs). CMOS sensors emerged as an alternative to charge-coupled device (CCD) image sensors and eventually outsold them by the mid-2000s.

A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. The vacuum-tube triode, also called a (thermionic) valve, was the transistor's precursor, introduced in 1907. The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925.

Chenming Calvin Hu is a Taiwanese electronic engineer who specializes in microelectronics. He is TSMC Distinguished Professor Emeritus in the electronic engineering and computer science department of the University of California, Berkeley, in the United States. In 2009, the Institute of Electrical and Electronics Engineers described him as a “microelectronics visionary … whose seminal work on metal-oxide semiconductor MOS reliability and device modeling has had enormous impact on the continued scaling of electronic devices”.

This article details the history of electronic engineering. Chambers Twentieth Century Dictionary (1972) defines electronics as "The science and technology of the conduction of electricity in a vacuum, a gas, or a semiconductor, and devices based thereon".

The integrated circuit (IC) chip was invented during 1958–1959. The idea of integrating electronic circuits into a single device was born when the German physicist and engineer Werner Jacobi developed and patented the first known integrated transistor amplifier in 1949 and the British radio engineer Geoffrey Dummer proposed to integrate a variety of standard electronic components in a monolithic semiconductor crystal in 1952. A year later, Harwick Johnson filed a patent for a prototype IC. Between 1953 and 1957, Sidney Darlington and Yasuro Tarui proposed similar chip designs where several transistors could share a common active area, but there was no electrical isolation to separate them from each other.

Dawon Kahng South Korean engineer

Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, also known as the MOS transistor, with Mohamed Atalla in 1959. Atalla and Kahng developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.

Mohamed M. Atalla mechanical engineer

Mohamed Mohamed Atalla was an Egyptian–American engineer, physical chemist, cryptographer, inventor and entrepreneur. His pioneering work in semiconductor technology laid the foundations for modern electronics. Most importantly, his invention of the MOSFET in 1959, along with his earlier surface passivation and thermal oxidation processes, revolutionized the electronics industry. He is also known as the founder of the data security company Atalla Corporation, founded in 1972, which introduced the first hardware security module and was a pioneer in online security. He received the Stuart Ballantine Medal and was inducted into the National Inventors Hall of Fame for his important contributions to semiconductor technology as well as data security.

References

  1. 1 2 "1963: Complementary MOS Circuit Configuration is Invented". Computer History Museum . Retrieved 6 July 2019.
  2. 1 2 "1978: Double-well fast CMOS SRAM (Hitachi)" (PDF). Semiconductor History Museum of Japan. Retrieved 5 July 2019.
  3. University of Florida Department of Electrical and Computer Engineering Archived November 12, 2007, at the Wayback Machine
  4. Fundamentals of Solid-State Electronics, Chih-Tang Sah. World Scientific, first published 1991, reprinted 1992, 1993 (pbk), 1994, 1995, 2001, 2002, 2006, ISBN   981-02-0637-2. -- ISBN   981-02-0638-0 (pbk).
  5. Accuracy of Long-Wide Channel Thick-Base MOS Transistor Models, B.B. Jie and Chih-Tang Sah, IEEE Transactions on Electron Devices, vol.54, no.8, August 2007.
  6. (Chinese) Pen-Tung Sah Archived July 7, 2011, at the Wayback Machine , Peking University Health Science Campus
  7. Chih-Han Sah, American Mathematical Society
  8. "1960 - Metal Oxide Semiconductor (MOS) Transistor Demonstrated". The Silicon Engine. Computer History Museum.
  9. "National Chiao Tung University, Honorary Doctorate, 薩支唐". www.nctu.edu.tw (in Chinese). Retrieved 2018-08-02.