This article needs additional citations for verification . (November 2012) (Learn how and when to remove this template message)
|Born|| May 4, 1931 |
|Died||May 13, 1992 61) (aged|
|Nationality|| South Korean |
|Known for|| MOSFET (MOS transistor) |
PMOS and NMOS
Dawon Kahng (May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal-oxide-semiconductor field-effect transistor), also known as the MOS transistor, with Mohamed Atalla in 1959. Atalla and Kahng developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
Atalla and Kahng later proposed the concept of the MOS integrated circuit, and they did pioneering work on Schottky diodes and nanolayer-base transistors in the early 1960s. Kahng then invented the floating-gate MOSFET (FGMOS) with Simon Sze in 1967. Kahng and Sze proposed that FGMOS could be used as floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM (erasable programmable ROM), EEPROM (electrically erasable programmable ROM) and flash memory technologies. Kahng was inducted into the National Inventors Hall of Fame in 2009.
Dawon Kahng was born on May 4, 1931, in Seoul, Korea. He studied Physics at Seoul National University in South Korea, and immigrated to the United States in 1955 to attend Ohio State University, where he received a doctorate in physics.
He was a researcher at Bell Telephone Laboratories in Murray Hill, New Jersey and he invented MOSFET (metal-oxide-semiconductor field-effect transistor), which is the basic element in most of today's electronic equipment, with Mohamed Atalla in 1959. µm process.They fabricated both PMOS and NMOS devices with a 20
Atalla in 1960, and then Kahng in 1961, proposed the concept of the MOS integrated circuit. They noted that the MOS transistor's ease of fabrication made it useful for integrated circuits.However, Bell Labs initially ignored MOS technology, as the company was not interested in integrated circuits at the time.
Extending their work on MOS technology, Atalla and Kahng next did pioneering work on hot carrier devices, which used what would later be called a Schottky barrier. –1961. They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter. The Schottky diode went on to assume a prominent role in mixer applications. They later conducted further research on high-frequency Schottky diodes.The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Atalla and Kahng during 1960
In 1962, Atalla and Kahng proposed and demonstrated an early metal nanolayer-base transistor. This device has a metallic layer with nanometric thickness sandwiched between two semiconducting layers, with the metal forming the base and the semiconductors forming the emitter and collector. With its low resistance and short transit times in the thin metallic nanolayer base, the device was capable of high operation frequency compared to bipolar transistors. Their pioneering work involved depositing metal layers (the base) on top of single crystal semiconductor substrates (the collector), with the emitter being a crystalline semiconductor piece with a top or a blunt corner pressed against the metallic layer (the point contact). They deposited gold (Au) thin films with a thickness of 10 nm on n-type germanium (n-Ge), while the point contact was n-type silicon (n-Si).
Along with his colleague Simon Sze, he invented the floating-gate MOSFET, which they first reported in 1967.They also invented the floating-gate memory cell, the foundation for many forms of semiconductor memory devices. He invented floating-gate non-volatile memory in 1967, and proposed that the floating gate of an MOS semiconductor device could be used for the cell of a reprogrammable ROM, which became the basis for EPROM (erasable programmable ROM), EEPROM (electrically erasable programmable ROM) and flash memory technologies. He also conducted research on ferro-electric semiconductors and luminous materials, and made important contributions to the field of electroluminescence.
After retiring from Bell Laboratories, he became the founding president of the NEC Research Institute in New Jersey. He was a fellow of the IEEE and a fellow of the Bell Laboratories. He was also a recipient of the Stuart Ballantine Medal of the Franklin Institute and the Distinguished Alumnus Award of the Ohio State University College of Engineering. He died of complications following emergency surgery for a ruptured aortic aneurysm in 1992.
Kahng and Mohamed Atalla were awarded the Stuart Ballantine Medal at the 1975 Franklin Institute Awards, for their invention of the MOSFET.In 2009, Kahng was inducted into the National Inventors Hall of Fame. In 2014, the 1959 invention of the MOSFET was included on the list of IEEE milestones in electronics.
Despite the MOSFET enabling Nobel Prize winning breakthroughs such as the quantum Hall effectand the charge-coupled device (CCD), there was never any Nobel Prize given for the MOSFET itself. In 2018, the Royal Swedish Academy of Sciences which awards the science Nobel Prizes acknowledged that the invention of the MOSFET by Atalla and Kahng was one of the most important inventions in microelectronics and in information and communications technology (ICT).
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Semiconductor devices have replaced vacuum tubes in most applications. They use electrical conduction in the solid state rather than the gaseous state or thermionic emission in a vacuum.
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The MOSFET was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in November 1959. It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion (1.3 × 1022) MOSFETs manufactured between 1960 and 2018.
An EPROM, or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light source. EPROMs are easily recognizable by the transparent fused quartz window in the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing.
In computer engineering, a logic family may refer to one of two related concepts. A logic family of monolithic digital integrated circuit devices is a group of electronic logic gates constructed using one of several different designs, usually with compatible logic levels and power supply characteristics within a family. Many logic families were produced as individual components, each containing one or a few related basic logical functions, which could be used as "building-blocks" to create systems or as so-called "glue" to interconnect more complex integrated circuits. A "logic family" may also refer to a set of techniques used to implement logic within VLSI integrated circuits such as central processors, memories, or other complex functions. Some such logic families use static techniques to minimize design complexity. Other such logic families, such as domino logic, use clocked dynamic techniques to minimize size, power consumption and delay.
Dr. Frank Marion Wanlass was an American electrical engineer. He is best known for inventing CMOS logic with Chih-Tang Sah in 1963. CMOS has since become the standard semiconductor device fabrication process for MOSFETs.
Simon Min Sze is a Chinese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Dawon Kahng in 1967.
A VMOS transistor is a type of MOSFET. VMOS is also used for describing the V-groove shape vertically cut into the substrate material. VMOS is an acronym for "vertical metal oxide semiconductor", or "V-groove MOS".
Solid-state electronics means semiconductor electronics; electronic equipment using semiconductor devices such as transistors, diodes and integrated circuits (ICs). The term is also used for devices in which semiconductor electronics which have no moving parts replace devices with moving parts, such as the solid-state relay in which transistor switches are used in place of a moving-arm electromechanical relay, or the solid-state drive (SSD) a type of semiconductor memory used in computers to replace hard disk drives, which store data on a rotating disk.
The floating-gate MOSFET (FGMOS), also known as a floating-gate transistor, is a type of MOSFET where the gate is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is completely surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. The vacuum-tube triode, also called a (thermionic) valve, was the transistor's precursor, introduced in 1907. The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925.
In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal-Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel.
A FET amplifier is an amplifier that uses one or more field-effect transistors (FETs). The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs). The main advantage of a FET used for amplification is that it has very high input impedance and low output impedance.
This article details the history of electronic engineering. Chambers Twentieth Century Dictionary (1972) defines electronics as "The science and technology of the conduction of electricity in a vacuum, a gas, or a semiconductor, and devices based thereon".
Mohamed Mohamed Atalla was an Egyptian–American engineer, physical chemist, cryptographer, inventor and entrepreneur. His pioneering work in semiconductor technology laid the foundations for modern electronics. Most importantly, his invention of the MOSFET in 1959, along with his earlier surface passivation and thermal oxidation processes, revolutionized the electronics industry. He is also known as the founder of the data security company Atalla Corporation, founded in 1972, which introduced the first hardware security module and was a pioneer in online security. He received the Stuart Ballantine Medal and was inducted into the National Inventors Hall of Fame for his important contributions to semiconductor technology as well as data security.
The field-effect transistor (FET) is a type of transistor which uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET in which the oxide layer is replaced by a double layer of nitride and oxide. It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer. It is used in non-volatile computer memory.
Three scientists were named recipients of the Franklin lnstitute's Stuart Ballantine Medal in 1975 [...] Martin M. Atalla, president of Atalla Technovations in California, and Dawon Kahng of Bell Laboratories were chosen "for their contributions to semiconductor silicon-silicon dioxide technology, and for the development of the MOS insulated gate, field-effect transistor.
|This article about a South Korean scientist is a stub. You can help Wikipedia by expanding it.|