Ghavam Shahidi

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Ghavam G. Shahidi is an Iranian-American electrical engineer and IBM Fellow. He is the director of Silicon Technology at the IBM Thomas J Watson Research Center. He is best known for his pioneering work in silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology since the late 1980s.

Career

He studied electrical engineering at MIT, where he wrote a PhD thesis on "velocity overshoot in deeply scaled MOSFETs" (metal-oxide-semiconductor field-effect transistors), under supervision of Professor Dimitri A. Antoniadis.

A 60 nanometer silicon MOSFET (metal-oxide-semiconductor field-effect transistor) was fabricated by Shahidi with Antoniadis and Henry I. Smith at MIT in 1986. [1] [2] The device was fabricated using X-ray lithography. [3]

Shahidi joined IBM Research in 1989, where he initiated and subsequently led the development of silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology at IBM. [4] It was called the SOI Research Program, which he led at the IBM Thomas J Watson Research Center. [4] Since then, he was the chief architect of SOI technology at IBM, leading the development of high-performance CMOS and SOI technologies at IBM Microelectronics. He made fundamental contributions to SOI technology, from materials research to the development of the first commercially viable devices. He was supported by his boss Bijan Davari, who believed in the technology and supported Shahidi's team. [5]

He was a key figure in making SOI CMOS technology a manufacturable reality and enabling the continued miniaturization of microelectronics. [6] Early SOI technology had a number of problems with manufacturing, modeling, circuits, and reliability, and it was not clear that it could offer performance gains over established technologies. [5] In the early 1990s, he demonstrated a novel technique of combining silicon epitaxial overgrowth and chemical mechanical polishing to prepare device-quality SOI material for fabricating devices and simple circuits, which led to IBM expanding its research program to include SOI substrates. He was also the first to demonstrate the power-delay advantage of SOI CMOS technology over traditional bulk CMOS in microprocessor applications. He overcame barriers preventing the semiconductor industry's adoption of SOI, and was instrumental in driving SOI substrate development to the quality and cost levels suitable for mass-production. [6]

This led to the first commercial use of SOI in mainstream CMOS technology. [4] SOI was first commercialized in 1995, when Shahidi's work on SOI convinced John Kelly, who ran IBM's server division, to adopt SOI in the AS/400 line of server products, which used 220 nm CMOS with copper metallization SOI devices. In early 2001, he used SOI to developed a low-power RF CMOS device, resulting in increased radio frequency. Later that year, IBM was set to introduce 130 nanometer CMOS SOI devices with copper and low-κ dielectric for the back end, based on Shahidi's work. [5]

His work resulted in the qualification of multiple CMOS SOI technologies and their transfer to manufacturing; establishment of design infrastructure; and the first mainstream use of SOI. He remained with IBM Microelectronics as the director of high-performance logic development until 2003. He then moved back to IBM's Watson's Laboratory as the Director of Silicon Technology. [7]

As director of silicon technology at IBM Research, he was researching lithography technology in the early 2000s. In 2004, he announced plans for IBM to commercialize lithography based on light filtered through water, and then X-ray lithography within the next several years. He also announced that his team were investigating 20 new semiconductor materials. [7]

Shahidi received the Institute of Electrical and Electronics Engineers' J J Ebers Award in 2006, for his "contributions and leadership in the development of Silicon-On-Insulator CMOS technology". [8] He is currently the director of Silicon Technology at the IBM Thomas J Watson Research Center in Yorktown Heights, New York. [6]

Related Research Articles

Integrated circuit electronic circuit manufactured by lithography; set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon

An integrated circuit or monolithic integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material that is normally silicon. The integration of large numbers of tiny MOS transistors into a small chip results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components. The IC's mass production capability, reliability, and building-block approach to circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones, and other digital home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs.

Semiconductor device fabrication Manufacturing process used to create integrated circuits

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically the metal-oxide-semiconductor (MOS) devices used in the integrated circuit (IC) chips that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.

A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as glass. Its resistance falls as its temperature rises; metals are the opposite. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. Where two differently-doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers which include electrons, ions and electron holes at these junctions is the basis of diodes, transistors and all modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits and others. Silicon is a critical element for fabricating most electronic circuits.

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Semiconductor devices have replaced vacuum tubes in most applications. They use electrical conduction in the solid state rather than the gaseous state or thermionic emission in a vacuum.

MOSFET Transistor used for amplifying or switching electronic signals.

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The MOSFET was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in November 1959. It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion (1.3 × 1022) MOSFETs manufactured between 1960 and 2018.

Thin-film transistor field-effect transistor device

A thin-film transistor (TFT) is a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) made by depositing thin films of an active semiconductor layer as well as the dielectric layer and metallic contacts over a supporting substrate. A common substrate is glass, because the primary application of TFTs is in liquid-crystal displays (LCDs). This differs from the conventional bulk MOSFET transistor, where the semiconductor material typically is the substrate, such as a silicon wafer.

Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two formerly separate semiconductor technologies, those of the bipolar junction transistor and the CMOS gate, in a single integrated circuit device.

SiGe, or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high temperature applications.

In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire. The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application.

The 90 nm process refers to the level of MOSFET (CMOS) fabrication process technology that was commercialized by the 2003–2005 timeframe, by leading semiconductor companies like Toshiba, Sony, Samsung, IBM, Intel, Fujitsu, TSMC, Elpida, AMD, Infineon, Texas Instruments and Micron Technology.

FinFET type of transistor used in nanoelectronic integrated circuits

A fin field-effect transistor (FinFET) is a multigate device, a MOSFET built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. These devices have been given the generic name "finfets" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS technology.

The 130 nm process refers to the level of MOSFET (CMOS) semiconductor process technology that was commercialized around the 2001–2002 timeframe, by leading semiconductor companies like Fujitsu, IBM, Intel, Texas Instruments, and TSMC.

Multigate device type of MOS field-effect transistor with more than one gate

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a MOSFET that incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET and the GAAFET, which are non-planar transistors, or 3D transistors.

In semiconductor manufacturing, the International Roadmap for Devices and Systems defines the 5 nm process as the MOSFET technology node following the 7 nm node. As of 2019, Samsung Electronics and TSMC have begun limited risk production of 5 nm nodes, and are planning to begin mass production in 2020.

Dawon Kahng South Korean engineer

Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, also known as the MOS transistor, with Mohamed Atalla in 1959. Atalla and Kahng developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.

Mohamed M. Atalla mechanical engineer

Mohamed Mohamed Atalla was an Egyptian–American engineer, physical chemist, cryptographer, inventor and entrepreneur. His pioneering work in semiconductor technology laid the foundations for modern electronics. Most importantly, his invention of the MOSFET in 1959, along with his earlier surface passivation and thermal oxidation processes, revolutionized the electronics industry. He is also known as the founder of the data security company Atalla Corporation, founded in 1972, which introduced the first hardware security module and was a pioneer in online security. He received the Stuart Ballantine Medal and was inducted into the National Inventors Hall of Fame for his important contributions to semiconductor technology as well as data security.

Bijan Davari is an Iranian-American engineer. He is an IBM Fellow and Vice President at IBM Thomas J Watson Research Center, Yorktown Hts, NY. His pioneering work in the miniaturization of semiconductor devices changed the world of computing. His research led to the first generation of voltage-scaled deep-submicron CMOS with sufficient performance to totally replace bipolar technology in IBM mainframes and enable new high-performance UNIX servers. He is credited with leading IBM into the use of copper and silicon on insulator before its rivals. He is a member of the U.S. National Academy of Engineers and is known for his seminal contributions to the field of CMOS technology. He is an IEEE Fellow, recipient of the J J Ebers Award in 2005 and IEEE Andrew S. Grove Award in 2010. At the present time, he leads the Next Generation Systems Area of research.

Gary Patton

Dr. Gary Patton is an American technologist and business executive. He is currently the Corporate Vice President and General Manager of Design Enablement in the Technology Development Group at Intel. He has spent most of his career in IBM, starting in IBM's Research Division and holding management and executive positions in IBM's Microelectronics Division in Technology Development, Design Enablement, Manufacturing, and Business Line Management.

References

  1. Shahidi, Ghavam G.; Antoniadis, Dimitri A.; Smith, Henry I. (December 1986). "Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths". 1986 International Electron Devices Meeting: 824–825. doi:10.1109/IEDM.1986.191325.
  2. Chou, Stephen Y.; Smith, Henry I.; Antoniadis, Dimitri A. (1986). "Sub‐100‐nm channel‐length transistors fabricated using x‐ray lithography". Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 4 (1): 253–255. Bibcode:1986JVSTB...4..253C. doi:10.1116/1.583451. ISSN   0734-211X.
  3. Shahidi, Ghavam G.; Antoniadis, Dimitri A.; Smith, Henry I. (December 1988). "Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's". IEEE Transactions on Electron Devices . 35 (12): 2430–. Bibcode:1988ITED...35.2430S. doi:10.1109/16.8835.
  4. 1 2 3 "Ghavam G. Shahidi". IEEE Xplore . Institute of Electrical and Electronics Engineers . Retrieved 16 September 2019.
  5. 1 2 3 "SOI scientist counted among latest IBM fellows". EE Times . 30 May 2001.
  6. 1 2 3 "Ghavam Shahidi". Engineering and Technology History. Institute of Electrical and Electronics Engineers . Retrieved 16 September 2019.
  7. 1 2 "A Whole New World of Chips". Business Week . Archived from the original on 2011-02-21.
  8. "Past J.J. Ebers Award Winners". IEEE Electron Devices Society . Institute of Electrical and Electronics Engineers . Retrieved 16 September 2019.