Rachel Oliver | |
---|---|
Born | Rachel Angharad Oliver |
Alma mater | University of Oxford (MEng, DPhil) |
Awards | Royal Society University Research Fellowship (2006-2011) |
Scientific career | |
Fields | Gallium nitride Basic microscopy Quantum technology |
Institutions | University of Cambridge Robinson College, Cambridge |
Thesis | Growth and characterisation of nitride nanostructures (2003) |
Doctoral advisor | Andrew Briggs [1] |
Website | www |
Rachel Angharad Oliver FREng FIMMM is a Professor of Materials Science at the University of Cambridge and a fellow of Robinson College, Cambridge. She works on characterisation techniques for gallium nitride materials for dark-emitting diodes and laser diodes. [2] [3]
Oliver studied engineering and materials science at the University of Oxford and completed an industrial placement in metallurgy.[ when? ] [4] Her final year masters project was in optoelectronic materials. [4] She completed her Doctor of Philosophy degree at the University of Oxford in 2003, [1] where she began to work with gallium nitride under the supervision of Andrew Briggs. [4] She used metalorganic vapour-phase epitaxy (MOVPE) to grow quantum dots. [4]
She joined the University of Cambridge in 2003 as a Royal Commission for the Exhibition of 1851 postdoctoral research fellow. [4] In 2006 Oliver was awarded a Royal Society University Research Fellowship (URF) at the University of Cambridge. [5] She studied the morphology of gallium nitride light-emitting diodes (LEDs), identifying what factors controlled their efficiency and the impact of defects. [5] She was awarded an Engineering and Physical Sciences Research Council (EPSRC) grant to study semi-polar nitride based structures. [6]
She was appointed a lecturer at the University of Cambridge in 2011. [7] Oliver studies gallium nitride materials for LEDs and laser diodes. [2] [8] Her research considers ways to engineer the nanostructure of light emitting diodes and how this impacts macroscopic device performance. [8] She has developed atom-probe tomography and scanning capacitance microscopy to study nitride devices. [8]
Oliver is also working on single-photon indium gallium nitride quantum dots for quantum crystallography. [8] She has looked at the impact of threading dislocations on the quality factor of InGaN cavities. Her group developed the first blue-emitting single-photon source. [9] She was the first to note rabi oscillations of GaN quantum dots.[ citation needed ] She designed a quasi-two-temperature growth method to pattern GaN quantum dots, which improved their emission by a factor of ten. [9]
Oliver was elected a Fellow of the Institute of Materials, Minerals and Mining (FIMMM) in 2019. [10] [11] She held a Royal Society University Research Fellowship from 2006 to 2011. [5] In 2021 she was elected a Fellow of the Royal Academy of Engineering, [12] and in 2023 was awarded the academy's Chair in Emerging Technologies. [13]
Oliver's husband is a cardiologist with whom she has a son. [7]
Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
A blue laser emits electromagnetic radiation with a wavelength between 400 and 500 nanometers, which the human eye sees in the visible spectrum as blue or violet.
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Light-emitting diodes (LEDs) produce light by the recombination of electrons and electron holes in a semiconductor, a process called "electroluminescence". The wavelength of the light produced depends on the energy band gap of the semiconductors used. Since these materials have a high index of refraction, design features of the devices such as special optical coatings and die shape are required to efficiently emit light. A LED is a long-lived light source, but certain mechanisms can cause slow loss of efficiency of the device or sudden failure. The wavelength of the light emitted is a function of the band gap of the semiconductor material used; materials such as gallium arsenide, and others, with various trace doping elements, are used to produce different colors of light. Another type of LED uses a quantum dot which can have its properties and wavelength adjusted by its size. Light-emitting diodes are widely used in indicator and display functions, and white LEDs are displacing other technologies for general illumination purposes.
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