Silicon nitride

Last updated
Silicon nitride
Si3N4ceramics2.jpg
Sintered silicon nitride ceramic
Names
Preferred IUPAC name
Silicon nitride
Other names
Nierite
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.031.620
EC Number
  • 234-796-8
MeSH Silicon+nitride
PubChem CID
Properties
Si3N4
Molar mass 140.283 g·mol−1
Appearancegrey, odorless powder [1]
Density 3.17 g/cm3 [1]
Melting point 1,900 °C (3,450 °F; 2,170 K) [1] (decomposes)
Insoluble [1]
2.016 [2]
Hazards
Main hazards When heated to decomposition, silicon nitride may emit toxic fumes of ammonia and ozone. Contact with acids may generate flammable hydrogen gas. [3]
not listed
Related compounds
Other anions
silicon carbide, silicon dioxide
Other cations
boron nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si
3
N
4
is the most thermodynamically stable of the silicon nitrides. Hence, Si
3
N
4
is the most commercially important of the silicon nitrides [4] and is generally understood as what is being referred to where the term "silicon nitride" is used. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H
2
SO
4
. It is very hard (8.5 on the mohs scale). It has a high thermal stability.

Contents

Production

The material will be prepared by heating powdered silicon between 1300 °C and 1400 °C in a nitrogen environment:

3 Si + 2 N
2
Si
3
N
4

The silicon sample weight increases progressively due to the chemical combination of silicon and nitrogen. Without an iron catalyst, the reaction is complete after several hours (~7), when no further weight increase due to nitrogen absorption (per gram of silicon) is detected. In addition to Si
3
N
4
, several other silicon nitride phases (with chemical formulas corresponding to varying degrees of nitridation/Si oxidation state) have been reported in the literature, for example, the gaseous disilicon mononitride (Si
2
N
); silicon mononitride (SiN), and silicon sesquinitride (Si
2
N
3
), each of which are stoichiometric phases. As with other refractories, the products obtained in these high-temperature syntheses depends on the reaction conditions (e.g. time, temperature, and starting materials including the reactants and container materials), as well as the mode of purification. However, the existence of the sesquinitride has since come into question. [5]

It can also be prepared by diimide route: [6]

SiCl
4
+ 6 NH
3
Si(NH)
2
+ 4 NH
4
Cl
(s)    at 0 °C
3 Si(NH)
2
Si
3
N
4
+ N
2
+ 3 H
2
(g)    at 1000 °C

Carbothermal reduction of silicon dioxide in nitrogen atmosphere at 1400–1450 °C has also been examined: [6]

3 SiO
2
+ 6 C + 2 N
2
Si
3
N
4
+ 6 CO

The nitridation of silicon powder was developed in the 1950s, following the "rediscovery" of silicon nitride and was the first large-scale method for powder production. However, use of low-purity raw silicon caused contamination of silicon nitride by silicates and iron. The diimide decomposition results in amorphous silicon nitride, which needs further annealing under nitrogen at 1400–1500 °C to convert it to crystalline powder; this is now the second-most important route for commercial production. The carbothermal reduction was the earliest used method for silicon nitride production and is now considered as the most-cost-effective industrial route to high-purity silicon nitride powder. [6]

Electronic-grade silicon nitride films are formed using chemical vapor deposition (CVD), or one of its variants, such as plasma-enhanced chemical vapor deposition (PECVD): [6] [7]

3 SiH
4
(g) + 4 NH
3
(g) → Si
3
N
4
(s) + 12 H
2
(g) at 750-850oC [8]
3 SiCl
4
(g) + 4 NH
3
(g) → Si
3
N
4
(s) + 12 HCl(g)
3 SiCl
2
H
2
(g) + 4 NH
3
(g) → Si
3
N
4
(s) + 6 HCl(g) + 6 H
2
(g)

For deposition of silicon nitride layers on semiconductor (usually silicon) substrates, two methods are used: [7]

  1. Low pressure chemical vapor deposition (LPCVD) technology, which works at rather high temperature and is done either in a vertical or in a horizontal tube furnace, [9] or
  2. Plasma-enhanced chemical vapor deposition (PECVD) technology, which works at rather low temperature and vacuum conditions.

The lattice constants of silicon nitride and silicon are different. Therefore, tension or stress can occur, depending on the deposition process. Especially when using PECVD technology this tension can be reduced by adjusting deposition parameters. [10]

Silicon nitride nanowires can also be produced by sol-gel method using carbothermal reduction followed by nitridation of silica gel, which contains ultrafine carbon particles. The particles can be produced by decomposition of dextrose in the temperature range 1200–1350 °C. The possible synthesis reactions are: [11]

SiO
2
(s) + C(s) → SiO(g) + CO(g)    and
3 SiO(g) + 2 N
2
(g) + 3 CO(g) → Si
3
N
4
(s) + 3 CO
2
(g)    or
3 SiO(g) + 2 N
2
(g) + 3 C(s) → Si
3
N
4
(s) + 3 CO(g).

Processing

Silicon nitride is difficult to produce as a bulk material—it cannot be heated over 1850 °C, which is well below its melting point, due to dissociation to silicon and nitrogen. Therefore, application of conventional hot press sintering techniques is problematic. Bonding of silicon nitride powders can be achieved at lower temperatures through adding additional materials (sintering aids or "binders") which commonly induce a degree of liquid phase sintering. [12] A cleaner alternative is to use spark plasma sintering where heating is conducted very rapidly (seconds) by passing pulses of electric current through the compacted powder. Dense silicon nitride compacts have been obtained by this techniques at temperatures 1500–1700 °C. [13] [14]

Crystal structure and properties

There exist three crystallographic structures of silicon nitride (Si
3
N
4
), designated as α, β and γ phases. [15] The α and β phases are the most common forms of Si
3
N
4
, and can be produced under normal pressure condition. The γ phase can only be synthesized under high pressures and temperatures and has a hardness of 35 GPa. [16] [17]

Si3N4strength.jpg

The α- and β-Si
3
N
4
have trigonal (Pearson symbol hP28, space group P31c, No. 159) and hexagonal (hP14, P63, No. 173) structures, respectively, which are built up by corner-sharing SiN
4
tetrahedra. They can be regarded as consisting of layers of silicon and nitrogen atoms in the sequence ABAB... or ABCDABCD... in β-Si
3
N
4
and α-Si
3
N
4
, respectively. The AB layer is the same in the α and β phases, and the CD layer in the α phase is related to AB by a c-glide plane. The Si
3
N
4
tetrahedra in β-Si
3
N
4
are interconnected in such a way that tunnels are formed, running parallel with the c axis of the unit cell. Due to the c-glide plane that relates AB to CD, the α structure contains cavities instead of tunnels. The cubic γ-Si
3
N
4
is often designated as c modification in the literature, in analogy with the cubic modification of boron nitride (c-BN). It has a spinel-type structure in which two silicon atoms each coordinate six nitrogen atoms octahedrally, and one silicon atom coordinates four nitrogen atoms tetrahedrally. [18]

The longer stacking sequence results in the α-phase having higher hardness than the β-phase. However, the α-phase is chemically unstable compared with the β-phase. At high temperatures when a liquid phase is present, the α-phase always transforms into the β-phase. Therefore, β-Si
3
N
4
is the major form used in Si
3
N
4
ceramics. [19]

In addition to the crystalline polymorphs of silicon nitride, glassy amorphous materials may be formed as the pyrolysis products of preceramic polymers, most often containing varying amounts of residual carbon (hence they are more appropriately considered as silicon carbonitrides). Specifically, polycarbosilazane can be readily converted to an amorphous form of silicon carbonitride based material upon pyrolysis, with valuable implications in the processing of silicon nitride materials through processing techniques more commonly used for polymers [20] .

Applications

In general, the main issue with applications of silicon nitride has not been technical performance, but cost. As the cost has come down, the number of production applications is accelerating. [21]

Automobile industry

One of the major applications of sintered silicon nitride is in automobile industry as a material for engine parts. Those include, in diesel engines, glowplugs for faster start-up; precombustion chambers (swirl chambers) for lower emissions, faster start-up and lower noise; turbocharger for reduced engine lag and emissions. In spark-ignition engines, silicon nitride is used for rocker arm pads for lower wear, turbocharger turbines for lower inertia and less engine lag, and in exhaust gas control valves for increased acceleration. As examples of production levels, there is an estimated more than 300,000 sintered silicon nitride turbochargers made annually. [6] [12] [21]

Bearings

Si3N4 bearing parts Si3N4bearings.jpg
Si3N4 bearing parts

Silicon nitride bearings are both full ceramic bearings and ceramic hybrid bearings with balls in ceramics and races in steel. Silicon nitride ceramics have good shock resistance compared to other ceramics. Therefore, ball bearings made of silicon nitride ceramic are used in performance bearings. A representative example is use of silicon nitride bearings in the main engines of the NASA's Space Shuttle. [22] [23]

Since silicon nitride ball bearings are harder than metal, this reduces contact with the bearing track. This results in 80% less friction, 3 to 10 times longer lifetime, 80% higher speed, 60% less weight, the ability to operate with lubrication starvation, higher corrosion resistance and higher operation temperature, as compared to traditional metal bearings. [21] Silicon nitride balls weigh 79% less than tungsten carbide balls. Silicon nitride ball bearings can be found in high end automotive bearings, industrial bearings, wind turbines, motorsports, bicycles, rollerblades and skateboards. Silicon nitride bearings are especially useful in applications where corrosion, electric or magnetic fields prohibit the use of metals. For example, in tidal flow meters, where seawater attack is a problem, or in electric field seekers. [12]

Si3N4 was first demonstrated as a superior bearing in 1972 but did not reach production until nearly 1990 because of challenges associated with reducing the cost. Since 1990, the cost has been reduced substantially as production volume has increased. Although Si
3
N
4
bearings are still 2–5 times more expensive than the best steel bearings, their superior performance and life are justifying rapid adoption. Around 15–20 million Si
3
N
4
bearing balls were produced in the U.S. in 1996 for machine tools and many other applications. Growth is estimated at 40% per year, but could be even higher if ceramic bearings are selected for consumer applications such as in-line skates and computer disk drives. [21]

High-temperature material

Silicon nitride thruster. Left: Mounted in test stand. Right: Being tested with H2/O2 propellants Si3N4thruster.jpg
Silicon nitride thruster. Left: Mounted in test stand. Right: Being tested with H2/O2 propellants

Silicon nitride has long been used in high-temperature applications. In particular, it was identified as one of the few monolithic ceramic materials capable of surviving the severe thermal shock and thermal gradients generated in hydrogen/oxygen rocket engines. To demonstrate this capability in a complex configuration, NASA scientists used advanced rapid prototyping technology to fabricate a one-inch-diameter, single-piece combustion chamber/nozzle (thruster) component. The thruster was hot-fire tested with hydrogen/oxygen propellant and survived five cycles including a 5-minute cycle to a 1320 °C material temperature. [24]

In 2010 silicon nitride was used as the main material in the thrusters of the JAXA space probe Akatsuki. [25]

Medical

Silicon nitride has many orthopedic applications. [26] [27] The material is also an alternative to PEEK (polyether ether ketone) and titanium, which are used for spinal fusion devices. [28] [29] It is silicon nitride’s hydrophilic, microtextured surface that contributes to the material's strength, durability and reliability compared to PEEK and titanium. [27] [28] [30]

Metal working and cutting tools

The first major application of Si
3
N
4
was abrasive and cutting tools. Bulk, monolithic silicon nitride is used as a material for cutting tools, due to its hardness, thermal stability, and resistance to wear. It is especially recommended for high speed machining of cast iron. Hot hardness, fracture toughness and thermal shock resistance mean that sintered silicon nitride can cut cast iron, hard steel and nickel based alloys with surface speeds up to 25 times quicker than those obtained with conventional materials such as tungsten carbide. [12] The use of Si
3
N
4
cutting tools has had a dramatic effect on manufacturing output. For example, face milling of gray cast iron with silicon nitride inserts doubled the cutting speed, increased tool life from one part to six parts per edge, and reduced the average cost of inserts by 50%, as compared to traditional tungsten carbide tools. [6] [21]

Electronics

Example of local silicon oxidation through a Si3N4 mask Locos (microtechnology) process.svg
Example of local silicon oxidation through a Si3N4 mask

Silicon nitride is often used as an insulator and chemical barrier in manufacturing integrated circuits, to electrically isolate different structures or as an etch mask in bulk micromachining. As a passivation layer for microchips, it is superior to silicon dioxide, as it is a significantly better diffusion barrier against water molecules and sodium ions, two major sources of corrosion and instability in microelectronics. It is also used as a dielectric between polysilicon layers in capacitors in analog chips. [31]

Si3N4 cantilever used in atomic force microscopes AFM (used) cantilever in Scanning Electron Microscope, magnification 1000x.GIF
Si3N4 cantilever used in atomic force microscopes

Silicon nitride deposited by LPCVD contains up to 8% hydrogen. It also experiences strong tensile stress, which may crack films thicker than 200 nm. However, it has higher resistivity and dielectric strength than most insulators commonly available in microfabrication (1016 Ω·cm and 10 MV/cm, respectively). [7]

Not only silicon nitride, but also various ternary compounds of silicon, nitrogen and hydrogen (SiNxHy) are used insulating layers. They are plasma deposited using the following reactions: [7]

2 SiH
4
(g) + N
2
(g) → 2 SiNH(s) + 3 H
2
(g)
SiH
4
(g) + NH
3
(g) → SiNH(s) + 3 H
2
(g)

These SiNH films have much less tensile stress, but worse electrical properties (resistivity 106 to 1015 Ω·cm, and dielectric strength 1 to 5 MV/cm). [7] [32] These silicon films are also thermally stable to high temperatures under specific physical conditions. Silicon nitride is also used in xerographic process as one of the layer of the photo drum. [33] Silicon nitride is also used as an ignition source for domestic gas appliances. [34] Because of its good elastic properties, silicon nitride, along with silicon and silicon oxide, is the most popular material for cantilevers — the sensing elements of atomic force microscopes. [35]

History

The first preparation was reported in 1857 by Henri Etienne Sainte-Claire Deville and Friedrich Wöhler. [36] In their method, silicon was heated in a crucible placed inside another crucible packed with carbon to reduce permeation of oxygen to the inner crucible. They reported a product they termed silicon nitride but without specifying its chemical composition. Paul Schuetzenberger first reported a product with the composition of the tetranitride, Si
3
N
4
, in 1879 that was obtained by heating silicon with brasque (a paste made by mixing charcoal, coal, or coke with clay which is then used to line crucibles) in a blast furnace. In 1910, Ludwig Weiss and Theodor Engelhardt heated silicon under pure nitrogen to produce Si
3
N
4
. [37] E. Friederich and L. Sittig made Si3N4 in 1925 via carbothermal reduction under nitrogen, that is, by heating silica, carbon, and nitrogen at 1250–1300 °C.

Silicon nitride remained merely a chemical curiosity for decades before it was used in commercial applications. From 1948 to 1952, the Carborundum Company, Niagara Falls, New York, applied for several patents on the manufacture and application of silicon nitride. [6] By 1958 Haynes (Union Carbide) silicon nitride was in commercial production for thermocouple tubes, rocket nozzles, and boats and crucibles for melting metals. British work on silicon nitride, started in 1953, was aimed at high-temperature parts of gas turbines and resulted in the development of reaction-bonded silicon nitride and hot-pressed silicon nitride. In 1971, the Advanced Research Project Agency of the US Department of Defense placed a US$17 million contract with Ford and Westinghouse for two ceramic gas turbines. [38]

Even though the properties of silicon nitride were well known, its natural occurrence was discovered only in the 1990s, as tiny inclusions (about 2  µm × 0.5 µm in size) in meteorites. The mineral was named nierite after a pioneer of mass spectrometry, Alfred O. C. Nier. [39] This mineral might have been detected earlier, again exclusively in meteorites, by Soviet geologists. [40]

Related Research Articles

Boron nitride chemical compound

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form

Chemical vapor deposition chemical process used in the semiconductor industry to produce thin films

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.

Sintering process of forming material by heat or pressure

Sintering or frittage is the process of compacting and forming a solid mass of material by heat or pressure without melting it to the point of liquefaction.

Beta carbon nitride

Beta carbon nitride (β-C3N4) is a superhard material predicted to be harder than diamond.

Silicon carbide semiconductor containing silicon and carbon

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite. Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite.

Epitaxy crystal growth process

Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with a well-defined orientation with respect to the crystalline substrate. The new layers formed are called the epitaxial film or epitaxial layer. The relative orientation of the epitaxial layer to the crystalline substrate is defined in terms of the orientation of the crystal lattice of each material. For epitaxial growth, the new layer will be crystalline and will all have a single orientation relative to the substrate; amorphous growth or multicrystalline growth with random crystal orientation does not meet this criteria.

Titanium diboride chemical compound

Titanium diboride (TiB2) is an extremely hard ceramic which has excellent heat conductivity, oxidation stability and resistance to mechanical erosion. TiB2 is also a reasonable electrical conductor, so it can be used as a cathode material in aluminium smelting and can be shaped by electrical discharge machining.

Aluminium nitride chemical compound

Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 285 W/(m·K), and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.

Titanium nitride chemical compound

Titanium nitride is an extremely hard ceramic material, often used as a coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.

Beryllium nitride chemical compound

Beryllium nitride, Be3N2, is a nitride of beryllium. It can be prepared from the elements at high temperature (1100–1500 °C), unlike Beryllium azide or BeN6, it decomposes in vacuum into beryllium and nitrogen. It is readily hydrolysed forming beryllium hydroxide and ammonia. It has two polymorphic forms cubic α-Be3N2 with a defect anti-fluorite structure, and hexagonal β-Be3N2. It reacts with silicon nitride, Si3N4 in a stream of ammonia at 1800–1900 °C to form BeSiN2.

Ceramic engineering Ceramic materials, which have been optimized in their properties for technical applications

Ceramic engineering is the science and technology of creating objects from inorganic, non-metallic materials. This is done either by the action of heat, or at lower temperatures using precipitation reactions from high-purity chemical solutions. The term includes the purification of raw materials, the study and production of the chemical compounds concerned, their formation into components and the study of their structure, composition and properties.

Chemical vapour infiltration (CVI) is a ceramic engineering process whereby matrix material is infiltrated into fibrous preforms by the use of reactive gases at elevated temperature to form fiber-reinforced composites. The earliest use of CVI was the infiltration of fibrous alumina with chromium carbide. CVI can be applied to the production of carbon-carbon composites and ceramic matrix composites. A similar technique is chemical vapour deposition (CVD), the main difference being that the deposition process of CVD is on hot bulk surfaces, while the deposition process of CVI is on porous substrates.

Sialon

SiAlON ceramics are a specialist class of high-temperature refractory materials, with high strength at ambient and high temperatures, good thermal shock resistance and exceptional resistance to wetting or corrosion by molten non-ferrous metals, compared to other refractory materials such as, for example, alumina. A typical use is with handling of molten aluminium. They also are exceptionally corrosion resistant and hence are also used in the chemical industry. SiAlONs also have high wear resistance, low thermal expansion and good oxidation resistance up to above ~1000 °C. They were first reported around 1971.

Lithium titanate chemical compound

Lithium titanate is a compound with the chemical formula Li2TiO3. It is a white powder with a melting point of 1,325 °C (2,417 °F).

Ceramic matrix composite subgroup of ceramics, subgroup of composites

Ceramic matrix composites (CMCs) are a subgroup of composite materials as well as a subgroup of ceramics. They consist of ceramic fibres embedded in a ceramic matrix. The matrix and fibres can consist of any ceramic material, whereby carbon and carbon fibres can also be considered a ceramic material.

Polysilazanes are polymers in which silicon and nitrogen atoms alternate to form the basic backbone. Since each silicon atom is bound to two separate nitrogen atoms and each nitrogen atom to two silicon atoms, both chains and rings of the formula occur. can be hydrogen atoms or organic substituents. If all substituents R are H atoms, the polymer is designated as Perhydropolysilazane, Polyperhydridosilazane, or Inorganic Polysilazane ([H2Si–NH]n). If hydrocarbon substituents are bound to the silicon atoms, the polymers are designated as Organopolysilazanes. Molecularly, polysilazanes are isoelectronic with and close relatives to Polysiloxanes (silicones).

Silicon oxynitride is a ceramic material with the chemical formula SiOxNy. While in amorphous forms its composition can continuously vary between SiO2 (silica) and Si3N4 (silicon nitride), the only known intermediate crystalline phase is Si2N2O. It is found in nature as the rare mineral sinoite in some meteorites and can be synthesized in the laboratory.

Ultra-high-temperature ceramics (UHTCs) are a class of refractory ceramics that offer excellent stability at temperatures exceeding 2000 °C being investigated as possible thermal protection system (TPS) materials, coatings for materials subjected to high temperatures, and bulk materials for heating elements. Broadly speaking, UHTCs are borides, carbides, nitrides, and oxides of early transition metals. Current efforts have focused on heavy, early transition metal borides such as hafnium diboride (HfB2) and zirconium diboride (ZrB2); additional UHTCs under investigation for TPS applications include hafnium nitride (HfN), zirconium nitride (ZrN), titanium carbide (TiC), titanium nitride (TiN), thorium dioxide (ThO2), tantalum carbide (TaC) and their associated composites.

Triphosphorus pentanitride is an inorganic compound with the chemical formula P3N5. Containing only phosphorus and nitrogen, this material is classified as a binary nitride. Few applications have been developed for this material, which remains predominantly a topic of research. It is a white solid, although samples often appear colored owing to impurities.

Abnormal grain growth

Abnormal or discontinuous grain growth, also referred to as exaggerated or secondary recrystallisation grain growth, is a grain growth phenomenon through which certain energetically favorable grains (crystallites) grow rapidly in a matrix of finer grains resulting in a bimodal grain size distribution.

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Cited sources

Salts and covalent derivatives of the nitride ion
NH3 He(N2)11
Li3N Be3N2 BN β-C3N4
g-C3N4
N2 NxOy NF3 Ne
Na3N Mg3N2 AlN Si3N4 PN
P3N5
SxNy
SN
S4N4
NCl3 Ar
K3N Ca3N2 ScN TiN VN CrN
Cr2N
MnxNy FexNy CoN Ni3N CuN Zn3N2 GaN Ge3N4 AsSe NBr3 Kr
Rb3N Sr3N2 YN ZrN NbN β-Mo2N TcRuRh PdN Ag3N CdN InN SnSbTe NI3 Xe
Cs3N Ba3N2   Hf3N4 TaN WN ReOsIrPtAu Hg3N2 TlN Pb BiN PoAtRn
Fr3N Ra3N  RfDbSgBhHsMtDsRgCnNhFlMcLvTsOg
La CeN PrNdPmSmEu GdN TbDyHoErTmYbLu
AcThPa UN NpPuAmCmBkCfEsFmMdNoLr