Tokyo Electron

Last updated
Tokyo Electron Limited
Native name
Romanized name
Tōkyō Erekutoron kabushiki gaisha
FormerlyTokyo Electron Laboratories, Inc. (1963–1978)
Type Public KK
Industry Electronics
PredecessorSakura Yoko KK founded on April 6, 1951
FoundedNovember 11, 1963;60 years ago (1963-11-11) (as Tokyo Electron Laboratories, Inc.)
Area served
North America
South Korea
Southeast Asia
Key people
Yoshikazu Nunokawa (Chairman), Toshiki Kawai (President & CEO) [1]
RevenueDecrease2.svg ¥1.13 trillion (2020) [2]
Increase2.svg ¥1.28 trillion (2019)
Decrease2.svg ¥237.29 billion (2020)
Decrease2.svg ¥185.21 billion (2020)
Total assets Increase2.svg ¥1.28 trillion (2020)
Total equity Decrease2.svg ¥829.69 billion (2020)
Number of employees
12,742 (2020) [2]
Parent TBS Holdings, Inc. (4.67%)
Subsidiaries 26 Group companies, including Tokyo Electron Device (TYO: 2760)
Footnotes /references
[3] [4] [5] [6]

Tokyo Electron Limited (Japanese: 東京エレクトロン株式会社, Hepburn: Tokyo Erekutoron Kabushiki-gaisha), or TEL, is a Japanese electronics and semiconductor company headquartered in Akasaka, Minato-ku, Tokyo, Japan. [4] The company was founded as Tokyo Electron Laboratories, Inc. in 1963.


TEL is best known as a supplier of equipment to fabricate integrated circuits (IC), flat panel displays (FPD), and photovoltaic cells (PV). [4] Tokyo Electron Device (東京エレクトロンデバイス株式会社, Tokyo Erekutoron Debaisu Kabushiki-gaisha, TYO: 2760), or TED, is a subsidiary of TEL specializing in semiconductor devices, electronic components, and networking devices. [4] As of 2011, TEL is the largest manufacturer of IC and FPD production equipment. [4]

On September 24, 2013 Tokyo Electron and Applied Materials announced a merger, [7] forming a new company to be called Eteris. [8] [9] Eteris would have been the world's largest supplier of semiconductor processing equipment, with a total market value of approximately $29 billion. On 26 April 2015, the merger was cancelled due to antitrust concerns in the United States. [10]

Company history

On 11 November 1963 Tokyo Electron Laboratories Incorporated was founded by Tokuo Kubo and Toshio Kodaka, largely funded by Tokyo Broadcasting System (TBS), with a capital of over five million yen. Later that year, their office opened in the TBS main building and began manufacturing thousands of quality-control and importing diffusion furnaces made by Thermco and selling Japanese-made car radios. [11]

In 1965 the company approached a rapidly growing business in the market, Fairchild Semiconductor Corporation and agreed to serve as a sales agency for them, increasing their capital to twenty million yen and began exporting IC testers, IC sockets, IC connectors, and other similar computer components. [11]

The company opened an office in San Francisco, California and their new branch, Pan Electron in 1968 established themselves as the only stocking distributor of imported electronic components in the region. [11]

One year later, they opened their Yokohama office and established Teltron, a major manufacturer and distributor of car stereos, expanding their headquarters to fill the entire TBS-2 building and raising their capital to 100 million yen. [11]


Semiconductor Production Equipment (SPE)

TEL produces Semiconductor Production Equipment (SPE) for the following purposes: [4]

Thermal processing
Deposition of thin layers of dielectric material between transistors onto the silicon wafer surface in a heated low-pressure chemical vapor deposition (LPCVD) or oxidation process [12]
Photoresist coating/developing
Photoresist coating and developing to project a microscopic circuitry pattern on the wafer in photolithography [13]
Plasma etching [14]
Wet surface preparation
Wafer surface cleaning to remove foreign particles or contaminants such as dust [15]
Single wafer chemical vapor deposition
Deposition of thin layers of various materials, such as tungsten, tungsten silicide, titanium, titanium nitride, and tantalum oxide [16]
Wafer probing
Wafer probers for testing the functionality and performance of each die on the wafer [17]
Material modification/doping
Surface modification and doping using gas cluster ion beam (GCIB) technology [18]
Corrective etching/trimming
Corrective etching and trimming of thin films such as silicon, silicon nitride, silicon dioxide, aluminum nitride, and metals [19]
Integrated metrology (co-developed by TEL and KLA Tencor) [20]
Advanced Packaging [21]

Group companies

TEL headquarters in akasaka Sacas, Tokyo Akasaka Biz Tower.JPG
TEL headquarters in akasaka Sacas, Tokyo
TEL Europe Ltd headquarters in Crawley, England Tokyo Electron Europe HQ, Manor Royal, Crawley.JPG
TEL Europe Ltd headquarters in Crawley, England

The Tokyo Electron Group consists of TEL and the following subsidiaries: [3] [22]

Research and development

TEL's Leading-edge Process Development Center is located in Nirasaki, Yamanashi. TEL also has the Kansai Technology Center in Amagasaki, Hyogo Prefecture and the Sendai Design and Development Center in Sendai, Miyagi Prefecture. TEL Technology Center, America, LLC in Albany, New York is the R&D center in the United States. TEL is one of the partners of IMEC, a microelectronics and nanoelectronics research center in Leuven, Belgium. [3]

In July 2014 TEL announced the establishment of joint assembly lab with Institute of Microelectronics in Singapore. The lab is focused on the research and development of Wafer Level Packaging and assembly, to address the need of Internet of Things with devices of high performance and low power consumption. [23]


Tokyo Electron Hall Miyagi in downtown Sendai Miyagi Prefectural Auditorium viewed from a greenway in Jozenji-dori avenue.JPG
Tokyo Electron Hall Miyagi in downtown Sendai

TEL supports association football in Japan by sponsoring the J. League as a whole and the football club Ventforet Kofu based in Kofu and Nirasaki as well as the rest of Yamanashi Prefecture.

The company has acquired naming rights of two multipurpose halls:

See also

Related Research Articles

<span class="mw-page-title-main">Integrated circuit</span> Electronic circuit formed on a small, flat piece of semiconductor material

An integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material, usually silicon. In an IC, a large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.

<span class="mw-page-title-main">MEMS</span> Very small devices that incorporate moving components

MEMS is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size, and MEMS devices generally range in size from 20 micrometres to a millimetre, although components arranged in arrays can be more than 1000 mm2. They usually consist of a central unit that processes data and several components that interact with the surroundings.

<span class="mw-page-title-main">Semiconductor device fabrication</span> Manufacturing process used to create integrated circuits

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.

<span class="mw-page-title-main">Monolithic microwave integrated circuit</span>

Monolithic microwave integrated circuit, or MMIC, is a type of integrated circuit (IC) device that operates at microwave frequencies. These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC devices are frequently matched to a characteristic impedance of 50 ohms. This makes them easier to use, as cascading of MMICs does not then require an external matching network. Additionally, most microwave test equipment is designed to operate in a 50-ohm environment.

<span class="mw-page-title-main">Epitaxy</span> Crystal growth process relative to the substrate

Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.

Applied Materials, Inc. is an American corporation that supplies equipment, services and software for the manufacture of semiconductor chips for electronics, flat panel displays for computers, smartphones, televisions, and solar products. Integral to the growth of Silicon Valley, the company also supplies equipment to produce coatings for flexible electronics, packaging and other applications. The company is headquartered in Santa Clara, California, and is the largest supplier of semiconductor equipment in the world based on revenue.

Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions that dislodge portions of the material from the exposed surface. A common type of dry etching is reactive-ion etching. Unlike with many of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.

Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon vias (TSVs) in advanced 3D wafer level packaging technology. In DRIE, the substrate is placed inside a reactor, and several gases are introduced. A plasma is struck in the gas mixture which breaks the gas molecules into ions. The ions accelerated towards, and react with the surface of the material being etched, forming another gaseous element. This is known as the chemical part of the reactive ion etching. There is also a physical part, if ions have enough energy, they can knock atoms out of the material to be etched without chemical reaction.

<span class="mw-page-title-main">Microfabrication</span> Fabrication at micrometre scales and smaller

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Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral. During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma. Eventually the atoms of the shot element embed themselves at or just below the surface of the target, thus modifying the physical properties of the target.

<span class="mw-page-title-main">Lam Research</span> American semiconductor equipment company

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In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain.

The term salicide refers to a technology used in the microelectronics industry used to form electrical contacts between the semiconductor device and the supporting interconnect structure. The salicide process involves the reaction of a metal thin film with silicon in the active regions of the device, ultimately forming a metal silicide contact through a series of annealing and/or etch processes. The term "salicide" is a compaction of the phrase self-aligned silicide. The description "self-aligned" suggests that the contact formation does not require photolithography patterning processes, as opposed to a non-aligned technology such as polycide.

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FSI International, Inc. (FSI) is an American manufacturing company based in Chaska, Minnesota, that supplies processing equipment used to manufacture microelectronics, including semiconductor devices.

Glossary of microelectronics manufacturing terms

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  1. "Leadership". Tokyo Electron. Retrieved 2022-12-25.
  2. 1 2 "Tokyo Electron". Forbes .
  3. 1 2 3 "Annual Report 2011" (PDF). Tokyo Electron Limited. March 31, 2011. Archived from the original (PDF) on January 4, 2012. Retrieved February 23, 2012.
  4. 1 2 3 4 5 6 "Fact Book 2011" (PDF). Tokyo Electron Limited. March 31, 2011. Retrieved February 23, 2012.[ permanent dead link ]
  5. "Company Info". Tokyo Electron Limited. April 1, 2013. Retrieved March 11, 2014.
  6. "Tokyo Electron Ltd: TYO:8035 quotes & news - Google Finance".
  7. Pfanner, Michael J. de la Merced and Eric (24 September 2013). "U.S. Manufacturer of Chip-Making Equipment Buys Japanese Rival".
  8. Clark, Don (8 July 2014). "WSJ". Wall Street Journal.
  9. "Key Developments".
  10. "UPDATE 3-Applied Materials scraps Tokyo Electron takeover on U.S. antitrust concerns". Reuters. 27 April 2015.
  11. 1 2 3 4 "Explore Our History". Tokyo Electron Limited. Archived from the original on March 1, 2012. Retrieved February 23, 2012.
  12. "Thermal Processing". Tokyo Electron Limited. Retrieved February 23, 2012.
  13. "Coater/Developers". Tokyo Electron Limited. Retrieved February 23, 2012.
  14. "Etch Systems". Tokyo Electron Limited. Retrieved February 23, 2012.
  15. "Surface Preparation Systems". Tokyo Electron Limited. Retrieved February 23, 2012.
  16. "Single Wafer Deposition". Tokyo Electron Limited. Retrieved February 23, 2012.
  17. "Wafer Probe Systems". Tokyo Electron Limited. Retrieved February 23, 2012.
  18. "Material Modification/Doping". Tokyo Electron Limited. Retrieved February 23, 2012.
  19. "Corrective Etching/Trimming". Tokyo Electron Limited. Retrieved February 23, 2012.
  20. "Integrated Metrology Systems". Tokyo Electron Limited. Retrieved February 23, 2012.
  21. "Advanced Packaging | Semiconductor Production Equipment | Tokyo Electron". Retrieved 2016-03-16.
  22. "About TEL Tokyo Electron". Retrieved 2016-03-16.
  23. "Establishment of Joint Assembly Lab with Institute of Microelectronics in Singapore". Tokyo Electron Limited. Retrieved 29 July 2014.