Junction transistor (disambiguation)

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Junction transistor usually means bipolar junction transistor. It may also refer to:

Bipolar junction transistor transistor that uses both electron and hole charge carriers.In contrast,unipolar transistors such as field-effect transistors,only use one kind of charge carrier.For their operation,BJTs use 2 junctions between 2 semiconductor types,n-type and p-type

A bipolar junction transistor is a type of transistor that uses both electrons and holes as charge carriers.

Grown-junction transistor

The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948, six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951.

Alloy-junction transistor

The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in 1951 as an improvement over the earlier grown-junction transistor.

A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction that acts exclusively as an electrically controlled switch.

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Transistor Basic electronics component

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

William Shockley American physicist and inventor

William Bradford Shockley Jr. was an American physicist and inventor. Shockley was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain. The three scientists were jointly awarded the 1956 Nobel Prize in Physics for "their researches on semiconductors and their discovery of the transistor effect".

A semiconductor device is an electronic component that exploits the electronic properties of semiconductor material, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced vacuum tubes in most applications. They use electrical conduction in the solid state rather than the gaseous state or thermionic emission in a vacuum.

MOSFET Transistor used for amplifying or switching electronic signals.

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. It has a covered gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The MOSFET was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in November 1959. It is the basic building block of modern electronics, and the most widely manufactured device in history, with an estimated total of 13 sextillion (1.3 × 1022) MOSFETs manufactured between 1960 and 2018.

JFET type of field-effect transistor

The junction gate field-effect transistor is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically-controlled switches, amplifiers, or voltage-controlled resistors.

Photodiode type of photodetector based on a p-n-junction

A photodiode is a semiconductor device that converts light into an electrical current. The current is generated when photons are absorbed in the photodiode. Photodiodes may contain optical filters, built-in lenses, and may have large or small surface areas. Photodiodes usually have a slower response time as their surface area increases. The common, traditional solar cell used to generate electric solar power is a large area photodiode.

Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors. Its name signifies that transistors perform both the logic function and the amplifying function ; it is the same naming convention used in resistor–transistor logic (RTL) and diode–transistor logic (DTL).

Darlington transistor compound structure consisting of two bipolar transistors

In electronics, a multi-transistor configuration called darlington pair, or the Darlington configuration is a compound structure of a particular design made by two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one. This configuration gives a much higher current gain than each transistor taken separately.

p–n junction semiconductor–semiconductor junction, formed at the boundary between a p-type and n-type semiconductor

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only in one direction. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy. If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes.

Electronic symbol pictogram used to represent various electrical and electronic devices in a schematic diagram of an electrical or electronic circuit

An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may vary from country to country, or engineering discipline, based on traditional conventions.

Point-contact transistor first type of solid-state electronic transistor ever constructed

The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of electric field effects in solid state materials, with the aim of replacing vacuum tubes with a smaller device that consumed less power.

Biasing Predetermined voltages or currents establishing proper operating conditions in electronic components

Biasing in electronics means establishing predetermined voltages or currents at various points of an electronic circuit for the purpose of establishing proper operating conditions in electronic components.

A tetrode transistor is any transistor having four active terminals.

A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than the alloy junction and grown junction processes for making BJTs.

A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. The vacuum-tube triode, also called a (thermionic) valve, was the transistor's precursor, introduced in 1907. The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925.

Mohamed M. Atalla mechanical engineer

Mohamed Mohamed Atalla was an Egyptian-American engineer, physical chemist, cryptographer, inventor and entrepreneur. His pioneering work in semiconductor technology laid the foundations for modern electronics. Most importantly, his invention of the MOSFET in 1959, along with his earlier surface passivation and thermal oxidation processes, revolutionized the electronics industry. He is also known as the founder of the data security company Atalla Corporation, founded in 1972, which introduced the first hardware security module and was a pioneer in online security. He received the Stuart Ballantine Medal and was inducted into the National Inventors Hall of Fame for his important contributions to semiconductor technology as well as data security.

Field-effect transistor transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation

The field-effect transistor (FET) is an electronic device which uses an electric field to control the flow of current. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.