Quantum dots (QDs), also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band. The excited electron can drop back into the valence band releasing its energy as light. This light emission (photoluminescence) is illustrated in the figure on the right. The color of that light depends on the energy difference between the conductance band and the valence band, or the transition between discrete energy states when the band structure is no longer well-defined in QDs.
A selenide is a chemical compound containing a selenium with oxidation number of −2. Similar to sulfide, selenides occur both as inorganic compounds and as organic derivatives, which are called organoselenium compound.
Cadmium selenide is an inorganic compound with the formula CdSe. It is a black to red-black solid that is classified as a II-VI semiconductor of the n-type. It is a pigment but applications are declining because of environmental concerns
An infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic (photodetectors).
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).
Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. A grey solid, it is used for manufacture of infrared detectors for thermal imaging. The mineral clausthalite is a naturally occurring lead selenide.
Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium. It is a semi-metal related to the II-VI group of semiconductor materials. Alternative names are mercuric telluride and mercury(II) telluride.
Tin selenide, also known as stannous selenide, is an inorganic compound with the formula SnSe. Tin(II) selenide is a typical layered metal chalcogenide as it includes a group 16 anion (Se2−) and an electropositive element (Sn2+), and is arranged in a layered structure. Tin(II) selenide is a narrow band-gap (IV-VI) semiconductor structurally analogous to black phosphorus. It has received considerable interest for applications including low-cost photovoltaics, and memory-switching devices.
Selenium compounds commonly exist in the oxidation states −2, +2, +4, and +6.
A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the captivating photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are adjustable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum.
Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ is a "defect wurtzite structure." In all, five polymorpsare known: α, β, γ, δ, κ. The α- β phase transition is accompanied by a change in electrical conductivity. The band-gap of γ-In2Se3 is approximately 1.9 eV.
Gallium(II) selenide (GaSe) is a chemical compound. It has a hexagonal layer structure, similar to that of GaS. It is a photoconductor, a second harmonic generation crystal in nonlinear optics, and has been used as a far-infrared conversion material at 14–31 THz and above.
A copper indium gallium selenide solar cell is a thin-film solar cell used to convert sunlight into electric power. It is manufactured by depositing a thin layer of copper indium gallium selenide solution on glass or plastic backing, along with electrodes on the front and back to collect current. Because the material has a high absorption coefficient and strongly absorbs sunlight, a much thinner film is required than of other semiconductor materials.
Athabascaite is a member of the copper selenide minerals, and forms with other copper selenides. It was first discovered by S. Kaiman in 1949 while he was researching radioactive materials around Lake Athabasca. Kaiman was conducting research near Uranium City, Saskatchewan where mass amounts of uranium mines were present.
Cuprospinel is a mineral. Cuprospinel is an inverse spinel with the chemical formula CuFe2O4, where copper substitutes some of the iron cations in the structure. Its structure is similar to that of magnetite, Fe3O4, yet with slightly different chemical and physical properties due to the presence of copper.
Core–shell semiconducting nanocrystals (CSSNCs) are a class of materials which have properties intermediate between those of small, individual molecules and those of bulk, crystalline semiconductors. They are unique because of their easily modular properties, which are a result of their size. These nanocrystals are composed of a quantum dot semiconducting core material and a shell of a distinct semiconducting material. The core and the shell are typically composed of type II–VI, IV–VI, and III–V semiconductors, with configurations such as CdS/ZnS, CdSe/ZnS, CdSe/CdS, and InAs/CdSe Organically passivated quantum dots have low fluorescence quantum yield due to surface related trap states. CSSNCs address this problem because the shell increases quantum yield by passivating the surface trap states. In addition, the shell provides protection against environmental changes, photo-oxidative degradation, and provides another route for modularity. Precise control of the size, shape, and composition of both the core and the shell enable the emission wavelength to be tuned over a wider range of wavelengths than with either individual semiconductor. These materials have found applications in biological systems and optics.
Solar Frontier Kabushiki Kaisha is a Japanese photovoltaic company that develops and manufactures thin film solar cells using CIGS technology. It is a fully owned subsidiary of Showa Shell Sekiyu and located in Minato, Tokyo, Japan. The company was founded in 2006 as Showa Shell Solar, and renamed Solar Frontier in April 2010.
I-III-VI2 semiconductors are solid semiconducting materials that contain three or more chemical elements belonging to groups I, III and VI (IUPAC groups 1/11, 13 and 16) of the periodic table. They usually involve two metals and one chalcogen. Some of these materials have a direct bandgap, Eg, of approximately 1.5 eV, which makes them efficient absorbers of sunlight and thus potential solar cell materials. A fourth element is often added to a I-III-VI2 material to tune the bandgap for maximum solar cell efficiency. A representative example is copper indium gallium selenide (CuInxGa(1–x)Se2, Eg = 1.7–1.0 eV for x = 0–1), which is used in copper indium gallium selenide solar cells.
Quantum dots (QDs) are semiconductor nanoparticles with a size less than 10 nm. They exhibited size-dependent properties especially in the optical absorption and the photoluminescence (PL). Typically, the fluorescence emission peak of the QDs can be tuned by changing their diameters. So far, QDs were consisted of different group elements such as CdTe, CdSe, CdS in the II-VI category, InP or InAs in the III-V category, CuInS2 or AgInS2 in the I–III–VI2 category, and PbSe/PbS in the IV-VI category. These QDs are promising candidates as fluorescent labels in various biological applications such as bioimaging, biosensing and drug delivery.
Indium(II) selenide (InSe) is an inorganic compound composed of indium and selenium. It is a III-VI layered semiconductor. The solid has a structure consisting of two-dimensional layers bonded together only by van der Waals forces. Each layer has the atoms in the order Se-In-In-Se.
