Computer data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers.
Double Data Rate Synchronous Dynamic Random-Access Memory is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM. None of its successors are forward or backward compatible with DDR1 SDRAM, meaning DDR2, DDR3, DDR4 and DDR5 memory modules will not work in DDR1-equipped motherboards, and vice versa.
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory, since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.
Synchronous dynamic random-access memory is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal.
A DIMM, commonly called a RAM stick, comprises a series of dynamic random-access memory integrated circuits. These memory modules are mounted on a printed circuit board and designed for use in personal computers, workstations, printers, and servers. They are the predominant method for adding memory into a computer system. The vast majority of DIMMs are standardized through JEDEC standards, although there are proprietary DIMMs. DIMMs come in a variety of speeds and sizes, but generally are one of two lengths - PC which are 133.35 mm (5.25 in) and laptop (SO-DIMM) which are about half the size at 67.60 mm (2.66 in).
Double Data Rate 2 Synchronous Dynamic Random-Access Memory is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It superseded the original DDR SDRAM specification, and was itself superseded by DDR3 SDRAM. DDR2 DIMMs are neither forward compatible with DDR3 nor backward compatible with DDR.
The MultiMediaCard, officially abbreviated as MMC, is a memory card standard used for solid-state storage. Unveiled in 1997 by SanDisk and Siemens, MMC is based on a surface-contact low pin-count serial interface using a single memory stack substrate assembly, and is therefore much smaller than earlier systems based on high pin-count parallel interfaces using traditional surface-mount assembly such as CompactFlash. Both products were initially introduced using SanDisk NOR-based flash technology. MMC is about the size of a postage stamp: 32 mm × 24 mm × 1.4 mm. MMC originally used a 1-bit serial interface, but newer versions of the specification allow transfers of 4 or 8 bits at a time. MMC can be used in many devices that can use Secure Digital (SD) cards.
In the fields of digital electronics and computer hardware, multi-channel memory architecture is a technology that increases the data transfer rate between the DRAM memory and the memory controller by adding more channels of communication between them. Theoretically, this multiplies the data rate by exactly the number of channels present. Dual-channel memory employs two channels. The technique goes back as far as the 1960s having been used in IBM System/360 Model 91 and in CDC 6600.
Registeredmemory modules have a register between the DRAM modules and the system's memory controller. They place less electrical load on the memory controller and allow single systems to remain stable with more memory modules than they would have otherwise. When compared with registered memory, conventional memory is usually referred to as unbuffered memory or unregistered memory. When manufactured as a dual in-line memory module (DIMM), a registered memory module is called an RDIMM, while unregistered memory is called UDIMM or simply DIMM.
Double Data Rate 3 Synchronous Dynamic Random-Access Memory is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors.
Memory bandwidth is the rate at which data can be read from or stored into a semiconductor memory by a processor. Memory bandwidth is usually expressed in units of bytes/second, though this can vary for systems with natural data sizes that are not a multiple of the commonly used 8-bit bytes.
The i-RAM is a solid-state storage device produced by Gigabyte and released in June 2005. It has four DDR RAM DIMM slots, and a connection via a SATA port enables a PC to see the i-RAM as a hard disk drive, which can also be made bootable. The SATA interface limits available bandwidth to a maximum sustained throughput of 150MB/s but allows latency of 0.1ms.
Chipkill is IBM's trademark for a form of advanced error checking and correcting (ECC) computer memory technology that protects computer memory systems from any single memory chip failure as well as multi-bit errors from any portion of a single memory chip. One simple scheme to perform this function scatters the bits of a Hamming code ECC word across multiple memory chips, such that the failure of any single memory chip will affect only one ECC bit per word. This allows memory contents to be reconstructed despite the complete failure of one chip. Typical implementations use more advanced codes, such as a BCH code, that can correct multiple bits with less overhead.
The memory controller is a digital circuit that manages the flow of data going to and from the computer's main memory. A memory controller can be a separate chip or integrated into another chip, such as being placed on the same die or as an integral part of a microprocessor; in the latter case, it is usually called an integrated memory controller (IMC). A memory controller is sometimes also called a memory chip controller (MCC) or a memory controller unit (MCU).
HyperDrive (HD) is a series of RAM-based solid-state drives invented by Accelerated Logic B.V. employee Pascal Bancsi, who partnered with the British company HyperOs Systems, who manufactured the retail product. The HyperDrive interfaces with and is recognized by computer systems as a standard hard drive.
The Open NAND Flash Interface Working Group is a consortium of technology companies working to develop open standards for NAND flash memory and devices that communicate with them. The formation of ONFI was announced at the Intel Developer Forum in March 2006.
Double Data Rate 4 Synchronous Dynamic Random-Access Memory is a type of synchronous dynamic random-access memory with a high bandwidth interface.
In the design of modern computers, memory geometry describes the internal structure of random-access memory. Memory geometry is of concern to consumers upgrading their computers, since older memory controllers may not be compatible with later products. Memory geometry terminology can be confusing because of the number of overlapping terms.
Double Data Rate 5 Synchronous Dynamic Random-Access Memory is a type of synchronous dynamic random-access memory. Compared to its predecessor DDR4 SDRAM, DDR5 was planned to reduce power consumption, while doubling bandwidth. The standard, originally targeted for 2018, was released on July 14, 2020.
