Universal memory

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Universal memory refers to a computer data storage device combining the cost benefits of DRAM, the speed of SRAM, the non-volatility of flash memory along with infinite durability, and longevity. Such a device, if it ever becomes possible to develop, would have a far-reaching impact on the computer market. Some [1] doubt that such a type of memory will ever be possible.

Computers, for most of their recent history, have depended on several different data storage technologies simultaneously as part of their operation. Each one operates at a level in the memory hierarchy where another would be unsuitable. A personal computer might include a few megabytes of fast but volatile and expensive SRAM as the CPU cache, several gigabytes of slower DRAM for program memory, and 128 GB-8 TB of the slow but non-volatile flash memory or 1-10 terabytes of "spinning platters" hard disk drive for long-term storage. For example, a university recommended [2] students entering in 2015–2016 to have a PC with:

- a CPU with a 4×256 KB L2 cache, and a 6 MB L3 cache
- 16 GB DRAM
- 256 GB solid-state drive, and
- 1 TB hard disk drive

Researchers seek to replace these different memory types with one single type to reduce the cost and increase performance. For a memory technology to be considered a universal memory, it would need to have best characteristics of several memory technologies. It would need to:

- operate very quickly like SRAM cache
- support a practically unlimited number of read/write cycles like SRAM and DRAM
- retain data indefinitely without using power like flash memory and hard disk drives, and
- be sufficiently large for common operating systems and application programs, yet affordable like hard disk drives.

The last criterion is likely to be satisfied last, as economies of scale in manufacturing reduce cost. Many types of memory technologies have been explored with the goal of creating a practical universal memory. These include:

Since each memory has its limitations, none of these have yet reached the goals of universal memory.

Related Research Articles

<span class="mw-page-title-main">Computer data storage</span> Storage of digital data readable by computers

Computer data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers.

<span class="mw-page-title-main">Computer memory</span> Device used on a computer for storing data

In computing, memory is a device or system that is used to store information for immediate use in a computer or related computer hardware and digital electronic devices. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store.

<span class="mw-page-title-main">Flash memory</span> Electronic non-volatile computer storage device

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

<span class="mw-page-title-main">Static random-access memory</span> Type of computer memory

Static random-access memory is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.

Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data indefinitely without electric power.

Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data.

Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random-access memory based on the position of carbon nanotubes deposited on a chip-like substrate. In theory, the small size of the nanotubes allows for very high density memories. Nantero also refers to it as NRAM.

Reading is an action performed by computers, to acquire data from a source and place it into their volatile memory for processing. Computers may read information from a variety of sources, such as magnetic storage, the Internet, or audio and video input ports. Reading is one of the core functions of a Turing machine.

Density is a measure of the quantity of information bits that can be stored on a given length of track, area of surface, or in a given volume of a computer storage medium. Generally, higher density is more desirable, for it allows more data to be stored in the same physical space. Density therefore has a direct relationship to storage capacity of a given medium. Density also generally affects the performance within a particular medium, as well as price.

Volatile memory, in contrast to non-volatile memory, is computer memory that requires power to maintain the stored information; it retains its contents while powered on but when the power is interrupted, the stored data is quickly lost.

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to MOS memory, where data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several MOS transistors per memory cell, and dynamic RAM (DRAM), which uses a MOS transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate MOS transistor per cell.

In computing, a hybrid drive is a logical or physical storage device that combines a faster storage medium such as solid-state drive (SSD) with a higher-capacity hard disk drive (HDD). The intent is adding some of the speed of SSDs to the cost-effective storage capacity of traditional HDDs. The purpose of the SSD in a hybrid drive is to act as a cache for the data stored on the HDD, improving the overall performance by keeping copies of the most frequently used data on the faster SSD drive.

<span class="mw-page-title-main">Solid-state drive</span> Data storage device

A solid-state drive (SSD) is a solid-state storage device that uses integrated circuit assemblies to store data persistently, typically using flash memory, and functioning as secondary storage in the hierarchy of computer storage. It is also sometimes called a semiconductor storage device, a solid-state device or a solid-state disk, even though SSDs lack the physical spinning disks and movable read–write heads used in hard disk drives (HDDs) and floppy disks.

<span class="mw-page-title-main">Read-only memory</span> Electronic memory that cannot be changed

Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications for programmable devices can be distributed as plug-in cartridges containing ROM.

<span class="mw-page-title-main">Random-access memory</span> Form of computer data storage

Random-access memory is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

This glossary of computer hardware terms is a list of definitions of terms and concepts related to computer hardware, i.e. the physical and structural components of computers, architectural issues, and peripheral devices.

Solid-state storage (SSS) is a type of non-volatile computer storage that stores and retrieves digital information using only electronic circuits, without any involvement of moving mechanical parts. This differs fundamentally from the traditional electromechanical storage, which records data using rotating or linearly moving media coated with magnetic material.

<span class="mw-page-title-main">Memory cell (computing)</span> Part of computer memory

The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.

<span class="mw-page-title-main">3D XPoint</span> Novel computer memory type meant to offer higher speeds than flash memory and lower prices than DRAM

3D XPoint is a discontinued non-volatile memory (NVM) technology developed jointly by Intel and Micron Technology. It was announced in July 2015 and is available on the open market under the brand name Optane (Intel) since April 2017. Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-grid data access array. Initial prices are less than dynamic random-access memory (DRAM) but more than flash memory.

References

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