Alloy broadening

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Alloy broadening is a mechanism by which the spectral lines of an alloy are broadened by the random distribution of atoms within the alloy. [1] It is one of a number of spectral line broadening mechanisms.

Alloy broadening occurs because the random distribution of atoms in an alloy causes a different material composition at different positions. In semiconductors and insulators the different material composition leads to different band gap energies. This gives different exciton recombination energies. Therefore, depending on the position where an exciton recombines the emitted light has a different energy. The alloy broadening is an inhomogeneous line broadening, meaning that its shape is Gaussian.[ citation needed ]

Binary alloy

In the mathematical description it is assumed that no clustering occurs within the alloy. Then, for a binary alloy of the form , e.g. , the standard deviation of the composition is given by: [2]

,

where is the number of atoms within the excitons' volume, i.e. with being the atoms per volume. In general, the band gap energy of a semiconducting alloy depends on the composition, i.e. . The band gap energy can be considered to be the fluorescence energy. Therefore, the standard deviation in fluorescence is: [3]

As the alloy broadening belongs to the group of inhomogeneous broadenings the line shape of the fluorescence intensity is Gaussian:[ why? ][ citation needed ]

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References

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  2. J. Weber, M. I. Alonso (1989), "Near-band-gap photoluminescence of Si-Ge alloys", Phys. Rev. B, vol. 40, no. 8, pp. 5683–5693, Bibcode:1989PhRvB..40.5683W, doi:10.1103/PhysRevB.40.5683, PMID   9992606 , retrieved 2018-06-15, Format: PDF, KBytes: 2005
  3. Schubert, E. F.; Göbel, E. O.; Horikoshi, Y.; Ploog, K.; Queisser, H. J. (1984-07-15). "Alloy broadening in photoluminescence spectra of AlxGa1−xAs". Physical Review B. 30 (2). American Physical Society (APS): 813–820. Bibcode:1984PhRvB..30..813S. doi:10.1103/physrevb.30.813. ISSN   0163-1829.