Break junction

Last updated

A break junction is an electronic device which consists of two metal wires separated by a very thin gap, on the order of the inter-atomic spacing (less than a nanometer). This can be done by physically pulling the wires apart or through chemical etching or electromigration. [1] As the wire breaks, the separation between the electrodes can be indirectly controlled by monitoring the electrical resistance of the junction.

Contents

After the gap is formed, its width can often be controlled by bending the substrate that the metal contacts lie on. The gap can be controlled to a precision of picometers. [2]

A typical conductance versus time trace during the breaking process (conductance is simply current divided by applied voltage bias) shows two regimes. First is a regime where the break junction comprises a quantum point contact. In this regime conductance decreases in steps equal to the conductance quantum which is expressed through the electron charge (−e) and Planck's constant . The conductance quantum has a value of 7.74×10−5 siemens, corresponding to a resistance increase of roughly 12.9 kΩ. These step decreases are interpreted as the result of a decrease, as the electrodes are pulled apart, in the number of single-atom-wide metal strands bridging between the two electrodes, each strand having a conductance equal to the quantum of conductance. As the wire is pulled, the neck becomes thinner with fewer atomic strands in it. Each time the neck reconfigures, which happens abruptly, a step-like decrease of the conductance can be observed. This picture inferred from the current measurement has been confirmed by "in-situ" TEM imaging of the breaking process combined with current measurement. [3] [4]

In a second regime, when the wire is pulled further apart, the conductance collapses to values less than the quantum of conductance. This is known as the tunneling regime where electrons tunnel through vacuums between the electrodes.

Use

Break junctions are used to make electrical contacts to study single molecules. [2] [5] [6]

Related Research Articles

Scanning tunneling microscope Instrument able to image surfaces at the atomic level by exploiting quantum tunneling effects

A scanning tunneling microscope (STM) is a type of microscope used for imaging surfaces at the atomic level. Its development in 1981 earned its inventors, Gerd Binnig and Heinrich Rohrer, then at IBM Zürich, the Nobel Prize in Physics in 1986. STM senses the surface by using an extremely sharp conducting tip that can distinguish features smaller than 0.1 nm with a 0.01 nm depth resolution. This means that individual atoms can routinely be imaged and manipulated. Most microscopes are built for use in ultra-high vacuum at temperatures approaching zero kelvin, but variants exist for studies in air, water and other environments, and for temperatures over 1000 °C.

Molecular electronics is the study and application of molecular building blocks for the fabrication of electronic components. It is an interdisciplinary area that spans physics, chemistry, and materials science. The unifying feature is use of molecular building blocks to fabricate electronic components. Due to the prospect of size reduction in electronics offered by molecular-level control of properties, molecular electronics has generated much excitement. It provides a potential means to extend Moore's Law beyond the foreseen limits of small-scale conventional silicon integrated circuits.

A nanowire is a nanostructure, with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. YBCO), metallic (e.g. Ni, Pt, Au, Ag), semiconducting (e.g. silicon nanowires (SiNWs), InP, GaN) and insulating (e.g. SiO2, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9−xIx).

Ionization or ionisation is the process by which an atom or a molecule acquires a negative or positive charge by gaining or losing electrons, often in conjunction with other chemical changes. The resulting electrically charged atom or molecule is called an ion. Ionization can result from the loss of an electron after collisions with subatomic particles, collisions with other atoms, molecules and ions, or through the interaction with electromagnetic radiation. Heterolytic bond cleavage and heterolytic substitution reactions can result in the formation of ion pairs. Ionization can occur through radioactive decay by the internal conversion process, in which an excited nucleus transfers its energy to one of the inner-shell electrons causing it to be ejected.

Tunnel magnetoresistance Magnetic effect in insulators between ferromagnets

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough, electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon.

Microwave spectroscopy is the spectroscopy method that employs microwaves, i.e. electromagnetic radiation at GHz frequencies, for the study of matter.

Ion trap Device for trapping charged particles

An ion trap is a combination of electric or magnetic fields used to capture charged particles — known as ions — often in a system isolated from an external environment. Ion traps have a number of scientific uses such as mass spectrometry, basic physics research, and controlling quantum states. The two most common types of ion trap are the Penning trap, which forms a potential via a combination of electric and magnetic fields, and the Paul trap which forms a potential via a combination of static and oscillating electric fields.

Coulomb blockade

In mesoscopic physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the decrease in electrical conductance at small bias voltages of a small electronic device comprising at least one low-capacitance tunnel junction. Because of the CB, the conductance of a device may not be constant at low bias voltages, but disappear for biases under a certain threshold, i.e. no current flows.

In superconductivity, a Josephson vortex is a quantum vortex of supercurrents in a Josephson junction. The supercurrents circulate around the vortex center which is situated inside the Josephson barrier, unlike Abrikosov vortices in type-II superconductors, which are located in the superconducting condensate.

Quantum point contact

A quantum point contact (QPC) is a narrow constriction between two wide electrically conducting regions, of a width comparable to the electronic wavelength.

Andreev reflection Scattering process at the normal-metal-superconductor interface

Andreev reflection (AR), named after the Russian physicist Alexander F. Andreev, is a type of particle scattering which occurs at interfaces between a superconductor (S) and a normal state material (N). It is a charge-transfer process by which normal current in N is converted to supercurrent in S. Each Andreev reflection transfers a charge 2e across the interface, avoiding the forbidden single-particle transmission within the superconducting energy gap.

A charge density wave (CDW) is an ordered quantum fluid of electrons in a linear chain compound or layered crystal. The electrons within a CDW form a standing wave pattern and sometimes collectively carry an electric current. The electrons in such a CDW, like those in a superconductor, can flow through a linear chain compound en masse, in a highly correlated fashion. Unlike a superconductor, however, the electric CDW current often flows in a jerky fashion, much like water dripping from a faucet due to its electrostatic properties. In a CDW, the combined effects of pinning and electrostatic interactions likely play critical roles in the CDW current's jerky behavior, as discussed in sections 4 & 5 below.

Molecular Conductance, or the conductance of a single molecule, is a physical quantity in molecular electronics. Molecular conductance is dependent on the surrounding conditions, as well as the properties of measuring device. Many experimental techniques have been developed in an attempt to measure this quantity directly, but theorists and experimentalists still face many challenges.

Inelastic electron tunneling spectroscopy (IETS) is an experimental tool for studying the vibrations of molecular adsorbates on metal oxides. It yields vibrational spectra of the adsorbates with high resolution (< 0.5 meV) and high sensitivity (< 1013 molecules are required to provide a spectrum). An additional advantage is the fact that optically forbidden transitions may be observed as well. Within IETS, an oxide layer with molecules adsorbed on it is put between two metal plates. A bias voltage is applied between the two contacts. An energy diagram of the metal-oxide-metal device under bias is shown in the top figure. The metal contacts are characterized by a constant density of states, filled up to the Fermi energy. The metals are assumed to be equal. The adsorbates are situated on the oxide material. They are represented by a single bridge electronic level, which is the upper dashed line. If the insulator is thin enough, there is a finite probability that the incident electron tunnels through the barrier. Since the energy of the electron is not changed by this process, it is an elastic process. This is shown in the left figure.

Molecular scale electronics, also called single-molecule electronics, is a branch of nanotechnology that uses single molecules, or nanoscale collections of single molecules, as electronic components. Because single molecules constitute the smallest stable structures imaginable, this miniaturization is the ultimate goal for shrinking electrical circuits.

Topological insulator State of matter with insulating bulk but conductive boundary

A topological insulator is a material that behaves as an insulator in its interior but whose surface contains conducting states, meaning that electrons can only move along the surface of the material. Topological insulators have non-trivial symmetry-protected topological order; however, having a conducting surface is not unique to topological insulators, since ordinary band insulators can also support conductive surface states. What is special about topological insulators is that their surface states are symmetry-protected Dirac fermions by particle number conservation and time-reversal symmetry. In two-dimensional (2D) systems, this ordering is analogous to a conventional electron gas subject to a strong external magnetic field causing electronic excitation gap in the sample bulk and metallic conduction at the boundaries or surfaces.

Photoconductive atomic force microscopy

Photoconductive atomic force microscopy (PC-AFM) is a variant of atomic force microscopy that measures photoconductivity in addition to surface forces.

Non-contact atomic force microscopy

Non-contact atomic force microscopy (nc-AFM), also known as dynamic force microscopy (DFM), is a mode of atomic force microscopy, which itself is a type of scanning probe microscopy. In nc-AFM a sharp probe is moved close to the surface under study, the probe is then raster scanned across the surface, the image is then constructed from the force interactions during the scan. The probe is connected to a resonator, usually a silicon cantilever or a quartz crystal resonator. During measurements the sensor is driven so that it oscillates. The force interactions are measured either by measuring the change in amplitude of the oscillation at a constant frequency just off resonance or by measuring the change in resonant frequency directly using a feedback circuit to always drive the sensor on resonance.

Proton tunneling is a type of quantum tunneling involving the instantaneous disappearance of a proton in one site and the appearance of the same proton at an adjacent site separated by a potential barrier. The two available sites are bounded by a double well potential of which its shape, width and height are determined by a set of boundary conditions. According to the WKB approximation, the probability for a particle to tunnel is inversely proportional to its mass and the width of the potential barrier. Electron tunneling is well-known. A proton is about 2000 times more massive than an electron, so it has a much lower probability of tunneling; nevertheless, proton tunneling still occurs especially at low temperatures and high pressures where the width of the potential barrier is decreased.

Christian Schönenberger is a Swiss experimental physicist and professor at the University of Basel working on nanoscience and nanoelectronics.

References

Notes

  1. "From Molecular Electronics to Proteonics: Break Junctions for Biomarker Detection - IEEE Life Sciences". Lifesciences.ieee.org. 2009-04-11. Archived from the original on 2011-10-18. Retrieved 2011-11-29.
  2. 1 2 "Phys. Rev. Lett. 99, 026601 (2007): Tuning the Kondo Effect with a Mechanically Controllable Break Junction". Prl.aps.org. Archived from the original on 2013-02-23. Retrieved 2011-11-29.
  3. H. Ohnishi, Y. Kondo and K. Takayanagi (1998). "Quantized conductance through individual rows of suspended gold atoms". Nature. 395 (6704): 780. Bibcode:1998Natur.395..780O. doi:10.1038/27399. S2CID   4370395.
  4. V. Rodrigues, T. Fuhrer and D. Ugarte (2000). "Signature of Atomic Structure in the Quantum Conductance of Gold Nanowires". Physical Review Letters. 85 (19): 4124–7. Bibcode:2000PhRvL..85.4124R. doi:10.1103/PhysRevLett.85.4124. PMID   11056640.
  5. "Lithographic mechanical break junctions for single-molecule measurements in vacuum: possibilities and limitations". Iopscience.iop.org. Retrieved 2011-11-29.
  6. "Phys. Rev. B 79, 081404 (2009): Probing charge transport in single-molecule break junctions using inelastic tunneling". Prb.aps.org. Archived from the original on 2012-07-13. Retrieved 2011-11-29.