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A Bubbler cylinder is a component of a unit for the metal organic chemical vapor deposition (MOCVD). They are devices that are used for conveying electronic grade metalorganic compounds from a liquid or solid precursor into a usable vapor.
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A Bubbler cylinder is a component of a unit for the metal organic chemical vapor deposition (MOCVD). They are devices that are used for conveying electronic grade metalorganic compounds from a liquid or solid precursor into a usable vapor.
The container of the Bubblers is similar to the construction of a gas washing bottle and used for the protected storage of metalorganic compounds to exclude air (oxygen, moisture). The bubbler has a supply pipe and a sampling tube. The inlet tube ends just before the bottom of the tube. In this tube, an inert gas is introduced, which bubbles through the liquid chemical; a solid chemical will sublime. The mixture of the controlled inert gas and the vaporized chemical leaves the cylinder into a downstream reaction vessel. The temperature is controlled by a thermostat, so that a defined, constant steam pressure can be achieved. The supply of the often expensive and sensitive chemical is controlled by the regulated flow of inert gas and the temperature of the bubbler, resulting in a given vapor pressure of the chemical.
The tube between the bubbler and the reactor has to have a higher temperature than the bubble, otherwise the precursor would condense in the tube and therefore uncontrolled droplets would be passed into the reaction vessel. If this happens with a solid precursor, it could plug the line.
For example, during the production of high brightness light emitting diodes, gallium or other group III-V elements are epitaxially deposited onto a single crystal silicon substrate. The gallium is introduced into the MOVPE reactor chamber via a vapor. This vapor is generated by bubbling an inert carrier gas (such as nitrogen or argon) through a cylinder with a dip tube through a metalorganic precursor, such as trimethylgallium. The inert carrier gas and the metalorganic vapor is then introduced into the MOVPE (or MOCVD) reactor chamber during the production of high brightness LEDs.
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Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
Cavitation is a phenomenon in which the static pressure of a liquid reduces to below the liquid's vapour pressure, leading to the formation of small vapor-filled cavities in the liquid. When subjected to higher pressure, these cavities, called "bubbles" or "voids", collapse and can generate shock waves that may damage machinery. These shock waves are strong when they are very close to the imploded bubble, but rapidly weaken as they propagate away from the implosion. Cavitation is a significant cause of wear in some engineering contexts. Collapsing voids that implode near to a metal surface cause cyclic stress through repeated implosion. This results in surface fatigue of the metal, causing a type of wear also called "cavitation". The most common examples of this kind of wear are to pump impellers, and bends where a sudden change in the direction of liquid occurs. Cavitation is usually divided into two classes of behavior: inertial cavitation and non-inertial cavitation.
The Haber process, also called the Haber–Bosch process, is the main industrial procedure for the production of ammonia. It is named after its inventors, the German chemists: Fritz Haber and Carl Bosch, who developed it in the first decade of the 20th century. The process converts atmospheric nitrogen (N2) to ammonia (NH3) by a reaction with hydrogen (H2) using a metal catalyst under high temperatures and pressures. This reaction is slightly exothermic (i.e. it releases energy), meaning that the reaction is favoured at lower temperatures and higher pressures. It decreases entropy, complicating the process. Hydrogen is produced via steam reforming, followed by an iterative closed cycle to react hydrogen with nitrogen to produce ammonia.
Gas chromatography (GC) is a common type of chromatography used in analytical chemistry for separating and analyzing compounds that can be vaporized without decomposition. Typical uses of GC include testing the purity of a particular substance, or separating the different components of a mixture. In preparative chromatography, GC can be used to prepare pure compounds from a mixture.
Fluidization is a process similar to liquefaction whereby a granular material is converted from a static solid-like state to a dynamic fluid-like state. This process occurs when a fluid is passed up through the granular material.
A chemical reactor is an enclosed volume in which a chemical reaction takes place. In chemical engineering, it is generally understood to be a process vessel used to carry out a chemical reaction, which is one of the classic unit operations in chemical process analysis. The design of a chemical reactor deals with multiple aspects of chemical engineering. Chemical engineers design reactors to maximize net present value for the given reaction. Designers ensure that the reaction proceeds with the highest efficiency towards the desired output product, producing the highest yield of product while requiring the least amount of money to purchase and operate. Normal operating expenses include energy input, energy removal, raw material costs, labor, etc. Energy changes can come in the form of heating or cooling, pumping to increase pressure, frictional pressure loss or agitation.
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures. As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation Science Center by Harold M. Manasevit.
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term CBE is often used interchangeably with metal-organic molecular beam epitaxy (MOMBE). The nomenclature does differentiate between the two processes, however. When used in the strictest sense, CBE refers to the technique in which both components are obtained from gaseous sources, while MOMBE refers to the technique in which the group III component is obtained from a gaseous source and the group V component from a solid source.
In flow chemistry, also called reactor engineering, a chemical reaction is run in a continuously flowing stream rather than in batch production. In other words, pumps move fluid into a reactor, and where tubes join one another, the fluids contact one another. If these fluids are reactive, a reaction takes place. Flow chemistry is a well-established technique for use at a large scale when manufacturing large quantities of a given material. However, the term has only been coined recently for its application on a laboratory scale by chemists and describes small pilot plants, and lab-scale continuous plants. Often, microreactors are used.
Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3, is an organogermanium compound. It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy) as an alternative to germane. IBGe is used in the deposition of Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe in NAND Flash applications.
Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric units are clearly linked by multiple weak Ga---C interactions, reminiscent of the situation for trimethylindium.
Dimethylzinc, also known as zinc methyl, DMZ, or DMZn, is an organozinc compound with the chemical formula Zn(CH3)2. It belongs to the large series of similar compounds such as diethylzinc.
Air-free techniques refer to a range of manipulations in the chemistry laboratory for the handling of compounds that are air-sensitive. These techniques prevent the compounds from reacting with components of air, usually water and oxygen; less commonly carbon dioxide and nitrogen. A common theme among these techniques is the use of a fine (100–10−3 Torr) or high (10−3–10−6 Torr) vacuum to remove air, and the use of an inert gas: preferably argon, but often nitrogen.
Hybrid physical–chemical vapor deposition (HPCVD) is a thin-film deposition technique, that combines physical vapor deposition (PVD) with chemical vapor deposition (CVD).
The Glossary of fuel cell terms lists the definitions of many terms used within the fuel cell industry. The terms in this fuel cell glossary may be used by fuel cell industry associations, in education material and fuel cell codes and standards to name but a few.
Cannula transfer or cannulation is a set of air-free techniques used with a Schlenk line, in transferring liquid or solution samples between reaction vessels via cannulae, avoiding atmospheric contamination. While the syringes are not the same as cannulae, the techniques remain relevant.
Chemical vapor deposition of ruthenium is a method to deposit thin layers of ruthenium on substrates by Chemical vapor deposition (CVD).
Ultra-high-purity steam, also called the clean steam, UHP steam or high purity water vapor, is used in a variety of industrial manufacturing processes that require oxidation or annealing. These processes include the growth of oxide layers on silicon wafers for the semiconductor industry, originally described by the Deal-Grove model, and for the formation of passivation layers used to improve the light capture ability of crystalline photovoltaic cells. Several methods and technologies can be employed to generate ultra high purity steam, including pyrolysis, bubbling, direct liquid injection, and purified steam generation. The level of purity, or the relative lack of contamination, affects the quality of the oxide layer or annealed surface. The method of delivery affects growth rate, uniformity, and electrical performance. Oxidation and annealing are common steps in the manufacture of such devices as microelectronics and solar cells.
Molecular layer deposition (MLD) is a vapour phase thin film deposition technique based on self-limiting surface reactions carried out in a sequential manner. Essentially, MLD resembles the well established technique of atomic layer deposition (ALD) but, whereas ALD is limited to exclusively inorganic coatings, the precursor chemistry in MLD can use small, bifunctional organic molecules as well. This enables, as well as the growth of organic layers in a process similar to polymerization, the linking of both types of building blocks together in a controlled way to build up organic-inorganic hybrid materials.
Polymer devolatilization, also known as polymer degassing, is the process of removing low-molecular-weight components such as residual monomers, solvents, reaction by-products and water from polymers.