Gallium oxide may refer to
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Gallium is a chemical element with the symbol Ga and atomic number 31. Elemental gallium is a soft, silvery metal at standard temperature and pressure; however in its liquid state it becomes silvery white. If too much force is applied, the gallium may fracture conchoidally. It is in group 13 of the periodic table, and thus has similarities to the other metals of the group, aluminium, indium, and thallium. Gallium does not occur as a free element in nature, but as gallium(III) compounds in trace amounts in zinc ores and in bauxite. Elemental gallium is a liquid at temperatures greater than 29.76 °C (85.57 °F), and will melt in a person's hands at normal human body temperature of 37 °C (99 °F).
Gallium arsenide (GaAs) It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
The boron group are the chemical elements in group 13 of the periodic table, comprising boron (B), aluminium (Al), gallium (Ga), indium (In), thallium (Tl), and perhaps also the chemically uncharacterized nihonium (Nh). The elements in the boron group are characterized by having three valence electrons. These elements have also been referred to as the triels.
Lanthanum gallium silicate (referred to as LGS in this article), also known as langasite, has a chemical formula of the form A3BC3D2O14, where A, B, C and D indicate particular cation sites. A is a decahedral (Thomson cube) site coordinated by 8 oxygen atoms. B is octahedral site coordinated by 6 oxygen atoms, and C and D are tetrahedral sites coordinated by 4 oxygen atoms. In this material, lanthanum occupied the A-sites, gallium the B, C and half of D-sites, and, silicon the other half of D-sites.
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.
Gallium(III) bromide (GaBr3) is a chemical compound, and one of four gallium trihalides.
Gallium(III) fluoride (GaF3) is a chemical compound. It is a white solid that melts under pressure above 1000 °C but sublimes around 950 °C. It has the FeF3 structure where the gallium atoms are 6-coordinate. GaF3 can be prepared by reacting F2 or HF with Ga2O3 or by thermal decomposition of (NH4)3GaF6. GaF3 is virtually insoluble in water. Solutions of GaF3 in HF can be evaporated to form the trihydrate, GaF3·3H2O, which on heating gives a hydrated form of GaF2(OH). Gallium(III) fluoride reacts with mineral acids to form hydrofluoric acid.
Gallium(III) trioxide is an inorganic compound with the formula Ga2O3. It exists as several polymorphs, all of which are white, water-insoluble solids. Although no commercial applications exist, Ga2O3 is an intermediate in the purification of gallium, which is consumed almost exclusively as gallium arsenide.
Gallium trichloride is the chemical compound with the formula GaCl3. Solid gallium trichloride exists as a dimer with the formula Ga2Cl6. It is colourless and soluble in virtually all solvents, even alkanes, which is truly unusual for a metal halide. It is the main precursor to most derivatives of gallium and a reagent in organic synthesis.
There are three sets of gallium halides, the trihalides where gallium has oxidation state +3, the intermediate halides containing gallium in oxidation states +1, +2 and +3 and some unstable monohalides, where gallium has oxidation state +1.
Gallium nitrate (brand name Ganite) is the gallium salt of nitric acid with the chemical formula Ga(NO3)3. It is a drug used to treat symptomatic hypercalcemia secondary to cancer. It works by preventing the breakdown of bone through the inhibition of osteoclast activity, thus lowering the amount of free calcium in the blood. Gallium nitrate is also used to synthesize other gallium compounds.
Organogallium chemistry is the chemistry of organometallic compounds containing a carbon to gallium (Ga) chemical bond. Despite their high toxicity, organogallium compounds have some use in organic synthesis. The compound trimethylgallium is of some relevance to MOCVD as a precursor to gallium arsenide via its reaction with arsine at 700 °C:
Plutonium–gallium alloy (Pu–Ga) is an alloy of plutonium and gallium, used in nuclear weapon pits, the component of a nuclear weapon where the fission chain reaction is started. This alloy was developed during the Manhattan Project.
Gallane, also systematically named trihydridogallium, is an inorganic compound of gallium with the chemical formula GaH
3. It is a photosensitive, colourless gas that cannot be concentrated in pure form. Gallane is both the simplest member of the gallanes, and the prototype of the monogallanes. It has no economic uses, and is only intentionally produced for academic reasons.
Liquid metal consists of alloys with very low melting points which form a eutectic that is liquid at room temperature. The standard metal used to be mercury, but gallium-based alloys, which are lower both in their vapor pressure at room temperature and toxicity, are being used as a replacement in various applications.
Indium(III) hydroxide is the chemical compound with the formula In(OH)3, its prime use is as a precursor to indium(III) oxide, In2O3. It is sometimes found as the rare mineral dzhalindite.
Gallium acetylacetonate, also referred to as Ga(acac)3, is a coordination complex with formula Ga(C5H7O2)3. This gallium complex with three acetylacetonate ligands is used in research. The molecule has D3 symmetry, being isomorphous with other octahedral tris(acetylacetonate)s.
Gallium nitride nanotubes (GaNNTs) are nanotubes of gallium nitride. They can be grown by chemical vapour deposition.
Gallium(I) oxide, digallium monoxide or gallium suboxide is an inorganic compound with the formula Ga2O.