Magnesium oxide (MgO), or magnesia, is a white hygroscopic solid mineral that occurs naturally as periclase and is a source of magnesium (see also oxide). It has an empirical formula of MgO and consists of a lattice of Mg2+ ions and O2− ions held together by ionic bonding. Magnesium hydroxide forms in the presence of water (MgO + H2O → Mg(OH)2), but it can be reversed by heating it to remove moisture.
Caesium fluoride or cesium fluoride is an inorganic compound with the formula CsF and it is a hygroscopic white salt. Caesium fluoride can be used in organic synthesis as a source of the fluoride anion. Caesium also has the highest electropositivity of all non-radioactive elements and fluorine has the highest electronegativity of all elements.
Copper(I) chloride, commonly called cuprous chloride, is the lower chloride of copper, with the formula CuCl. The substance is a white solid sparingly soluble in water, but very soluble in concentrated hydrochloric acid. Impure samples appear green due to the presence of copper(II) chloride (CuCl2).
Magnesium silicide, Mg2Si, is an inorganic compound consisting of magnesium and silicon. As-grown Mg2Si usually forms black crystals; they are semiconductors with n-type conductivity and have potential applications in thermoelectric generators.
Zinc telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct band gap of 2.26 eV. It is usually a p-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond.
Aluminium fluoride refers to inorganic compounds with the formula AlF3·xH2O. They are all colorless solids. Anhydrous AlF3 is used in the production of aluminium metal. Several occur as minerals.
Aluminium iodide is a chemical compound containing aluminium and iodine. Invariably, the name refers to a compound of the composition AlI
3, formed by the reaction of aluminium and iodine or the action of HI on Al metal. The hexahydrate is obtained from a reaction between metallic aluminum or aluminum hydroxide with hydrogen iodide or hydroiodic acid. Like the related chloride and bromide, AlI
3 is a strong Lewis acid and will absorb water from the atmosphere. It is employed as a reagent for the scission of certain kinds of C-O and N-O bonds. It cleaves aryl ethers and deoxygenates epoxides.
Gallium(III) trioxide is an inorganic compound with the formula Ga2O3. It exists as several polymorphs, all of which are white, water-insoluble solids. Ga2O3 is an intermediate in the purification of gallium, which is consumed almost exclusively as gallium arsenide. The thermal conductivity of β-Ga2O3 is at least one order of magnitude lower than the other wide bandgap semiconductors, such as GaN and SiC. It is further reduced for related nanostructures which are usually used in electronic devices. Heterogeneous integration with high thermal conductivity substrates such as diamond and SiC helps heat dissipation of β-Ga2O3 electronics.
Thallium(I) bromide is a chemical compound of thallium and bromine with a chemical formula TlBr. This salt is used in room-temperature detectors of X-rays, gamma-rays and blue light, as well as in near-infrared optics.
Thallium(I) chloride, also known as thallous chloride, is a chemical compound with the formula TlCl. This colourless salt is an intermediate in the isolation of thallium from its ores. Typically, an acidic solution of thallium(I) sulfate is treated with hydrochloric acid to precipitate insoluble thallium(I) chloride. This solid crystallizes in the caesium chloride motif.
Caesium bromide or cesium bromide is an ionic compound of caesium and bromine with the chemical formula CsBr. It is a white or transparent solid with melting point at 636 °C that readily dissolves in water. Its bulk crystals have the cubic CsCl structure, but the structure changes to the rocksalt type in nanometer-thin film grown on mica, LiF, KBr or NaCl substrates.
Uranium trifluoride is an inorganic chemical compound with the chemical formula UF3.
Hafnium tetrafluoride is the inorganic compound with the formula HfF4. It is a white solid. It adopts the same structure as zirconium tetrafluoride, with 8-coordinate Hf(IV) centers.
Promethium(III) chloride is a chemical compound of promethium and chlorine with the formula PmCl3. It is an ionic, water soluble, crystalline salt that glows in the dark with a pale blue or green light due to Promethium's intense radioactivity.
Calcium monosilicide (CaSi) is an inorganic compound, a silicide of calcium. It can be prepared by reacting elemental calcium and silicon at temperatures above 1000 °C. It is a Zintl phase, where silicon has oxidation state −2 and covalence 2.
Hafnium(IV) iodide is the inorganic compound with the formula HfI4. It is a red-orange, moisture sensitive, sublimable solid that is produced by heating a mixture of hafnium with excess iodine. It is an intermediate in the crystal bar process for producing hafnium metal.
Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes. Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.
Actinium(III) fluoride (AcF3) is an inorganic compound, a salt of actinium and fluorine.
Promethium(III) fluoride or promethium trifluoride is a salt of promethium and fluorine with the formula PmF3.
Rhenium ditelluride is an inorganic compound of rhenium and tellurium with the formula ReTe2. Contrary to rhenium disulfide and diselenide, it does not have a layered structure.
