Gallium antimonide

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Gallium antimonide
Sphalerite-unit-cell-3D-balls.png
Names
IUPAC name
Gallium(III) antimonide
Other names
Gallium antimonide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.031.859 OOjs UI icon edit-ltr-progressive.svg
PubChem CID
  • InChI=1S/Ga.Sb Yes check.svgY
    Key: VTGARNNDLOTBET-UHFFFAOYSA-N Yes check.svgY
  • InChI=1/Ga.Sb/rGaSb/c1-2
    Key: VTGARNNDLOTBET-KXXLTECTAC
  • [Ga]#[Sb]
  • [Ga+3].[Sb-3]
Properties
GaSb
Molar mass 191.483 g/mol
Density 5.614 g/cm3
Melting point 712 °C (1,314 °F; 985 K)
insoluble
Band gap 0.726 eV (300 K)
Electron mobility 3000 cm2/(V*s) (300 K)
Thermal conductivity 0.32 W/(cm*K) (300 K)
3.8
Structure
Sphalerite, cF8
F-43m, No. 216
Hazards
NFPA 704 (fire diamond)
NFPA 704.svgHealth 1: Exposure would cause irritation but only minor residual injury. E.g. turpentineFlammability 0: Will not burn. E.g. waterInstability 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g. liquid nitrogenSpecial hazards (white): no code
1
0
0
Flash point Non-flammable
Related compounds
Other anions
Gallium nitride
Gallium phosphide
Gallium arsenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Yes check.svgY  verify  (what is  Yes check.svgYX mark.svgN ?)

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm. [1] It has a room temperature direct bandgap of approximately 0.73 eV. [1] [2] [3]

Contents

History

The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide. [4] The Ga-Sb phase equilibria was investigated in 1955 by Koster [5] and by Greenfield. [6]

Applications

GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

See also

Related Research Articles

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Aluminium arsenide antimonide, or AlAsSb (AlAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered as an alloy between aluminium arsenide and aluminium antimonide. The alloy can contain any ratio between arsenic and antimony. AlAsSb refers generally to any composition of the alloy.

References

  1. 1 2 Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156.
  2. ↑ Dutta, P. S., Bhat, H. L., Kumar, V. (1997). "The physics and technology of gallium antimonide: An emerging optoelectronic material". Journal of Applied Physics. 81 (9): 5821–5870. Bibcode:1997JAP....81.5821D. doi:10.1063/1.365356.
  3. ↑ Madelung, O., Rössler, U., Schulz, M., eds. (2002). "Gallium antimonide (GaSb), direct energy gap". Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties. Landolt-Börnstein - Group III Condensed Matter. Vol. b. Springer-Verlag. pp. 1–5. doi:10.1007/10832182_229. ISBN   978-3-540-42876-3.
  4. ↑ Goldschmidt, Victor Moritz (1926). "Geochemische Verteilungsgesetze der Elemente : 7. Die Gesetze der Krystallochemie". Skrifter Norske Videnskaps-Akademi I Oslo (in German). I Kommission Hos Jacob Dybwad: 29.
  5. ↑ Köster, Werner; Thoma, Berthold (1955-04-01). "Aufbau der Systeme Gallium-Antimon, Gallium-Arsen und Aluminium-Arsen". International Journal of Materials Research. 46 (4): 291–293. Bibcode:1955IJMR...46..291K. doi:10.1515/ijmr-1955-460408. ISSN   2195-8556.
  6. ↑ Greenfield, I. G.; Smith, R. L. (1955). "Gallium-Antimony System". Transactions AIME. 7 (2): 351–353. Bibcode:1955JOM.....7..351G. doi:10.1007/BF03377506. ISSN   1047-4838.
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