Zinc antimonide

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Zinc antimonide [1]
ZnSbstructure.jpg
Names
IUPAC name
Zinc antimonide
Identifiers
3D model (JSmol)
ECHA InfoCard 100.031.708 OOjs UI icon edit-ltr-progressive.svg
EC Number
  • 234-893-5(ZnSb)
PubChem CID
UN number 1459
  • InChI=1S/3Sb.4Zn/q;;;;3*+2
    Key: JVDDZZNIYDFBAH-UHFFFAOYSA-N
  • [Zn].[Zn+2].[Zn+2].[Zn+2].[Sb].[Sb].[Sb]
Properties
ZnSb, Zn3Sb2, Zn4Sb3
Molar mass 434.06 g/mol
Appearancesilver-white orthorhombic crystals
Density 6.33 g/cm3
Melting point 546 °C (1,015 °F; 819 K) (565 °C, 563 °C)
reacts
Band gap 0.56 eV (ZnSb), 1.2eV (Zn4Sb3)
Structure
Orthorhombic, oP16
Pbca, No. 61
Hazards
GHS labelling:
GHS-pictogram-skull.svg GHS-pictogram-pollu.svg
Danger
H302, H331, H410
P261, P273, P311, P501
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Zinc antimonide (Zn Sb), (Zn 3 Sb 2), (Zn 4 Sb 3) is an inorganic chemical compound. The Zn-Sb system contains six intermetallics. [2] Like indium antimonide, aluminium antimonide, and gallium antimonide, it is a semiconducting intermetallic compound. It is used in transistors, infrared detectors and thermal imagers, as well as magnetoresistive devices.

History of zinc–antimony alloys and zinc antimonide

The first reported use of zinc-antimony alloys was in the original work of T. J. Seebeck on thermoelectricity, [3] a scientist who would then give his name to the Seebeck effect. By the 1860s, Moses G. Farmer, an American inventor, had developed the first high powered thermoelectric generator based on using a zinc-antimony alloy with a composition very close to stoichiometric ZnSb. He showed this generator at the 1867 Paris Exposition where it was carefully studied and copied (with minor modifications) by a number of people including Clamond.[ clarification needed ] Farmer finally received the patent on his generator in 1870. George H. Cove patented a thermoelectric generator based on a Zn-Sb alloy in the early 1900s. His patent [4] claimed that the voltage and current for six "joints" was 3V at 3A. This was a far higher output than would be expected from a thermoelectric couple, and was possibly the first demonstration of the thermophotovoltaic effect, as the bandgap for ZnSb is 0.56eV, which under ideal conditions[ according to whom? ] could yield close to 0.5V per diode.[ citation needed ] The next researcher to work with the material was Mária Telkes while she was at Westinghouse in Pittsburgh during the 1930s. Interest was revived again with the discovery of the higher bandgap Zn4Sb3 material in the 1990s.

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<span class="mw-page-title-main">Antimony</span> Chemical element, symbol Sb and atomic number 51

Antimony ( AN-tih-moh-nee, AN-tih-mə-nee) is a chemical element; it has symbol Sb (from Latin stibium) and atomic number 51. A lustrous gray metalloid, it is found in nature mainly as the sulfide mineral stibnite (Sb2S3). Antimony compounds have been known since ancient times and were powdered for use as medicine and cosmetics, often known by the Arabic name kohl. The earliest known description of the metalloid in the West was written in 1540 by Vannoccio Biringuccio.

<span class="mw-page-title-main">Solder</span> Alloy used to join metal pieces

Solder is a fusible metal alloy used to create a permanent bond between metal workpieces. Solder is melted in order to wet the parts of the joint, where it adheres to and connects the pieces after cooling. Metals or alloys suitable for use as solder should have a lower melting point than the pieces to be joined. The solder should also be resistant to oxidative and corrosive effects that would degrade the joint over time. Solder used in making electrical connections also needs to have favorable electrical characteristics.

<span class="mw-page-title-main">Thermoelectric cooling</span> Electrically powered heat-transfer

Thermoelectric cooling uses the Peltier effect to create a heat flux at the junction of two different types of materials. A Peltier cooler, heater, or thermoelectric heat pump is a solid-state active heat pump which transfers heat from one side of the device to the other, with consumption of electrical energy, depending on the direction of the current. Such an instrument is also called a Peltier device, Peltier heat pump, solid state refrigerator, or thermoelectric cooler (TEC) and occasionally a thermoelectric battery. It can be used either for heating or for cooling, although in practice the main application is cooling. It can also be used as a temperature controller that either heats or cools.

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<span class="mw-page-title-main">Thermoelectric effect</span> Direct conversion of temperature differences to electric voltage and vice versa

The thermoelectric effect is the direct conversion of temperature differences to electric voltage and vice versa via a thermocouple. A thermoelectric device creates a voltage when there is a different temperature on each side. Conversely, when a voltage is applied to it, heat is transferred from one side to the other, creating a temperature difference. At the atomic scale, an applied temperature gradient causes charge carriers in the material to diffuse from the hot side to the cold side.

<span class="mw-page-title-main">Thermoelectric materials</span> Materials whose temperature variance leads to voltage change

Thermoelectric materials show the thermoelectric effect in a strong or convenient form.

<span class="mw-page-title-main">Intermetallic</span> Type of metallic alloy

An intermetallic is a type of metallic alloy that forms an ordered solid-state compound between two or more metallic elements. Intermetallics are generally hard and brittle, with good high-temperature mechanical properties. They can be classified as stoichiometric or nonstoichiometic intermetallic compounds.

<span class="mw-page-title-main">Indium antimonide</span> Chemical compound

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. Indium antimonide detectors are sensitive to infrared wavelengths between 1 and 5 μm.

<span class="mw-page-title-main">Mercury cadmium telluride</span> Alloy

Hg1−xCdxTe or mercury cadmium telluride is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately 1.5 electronvolts (eV) at room temperature. HgTe is a semimetal, which means that its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV.

Thermophotovoltaic (TPV) energy conversion is a direct conversion process from heat to electricity via photons. A basic thermophotovoltaic system consists of a hot object emitting thermal radiation and a photovoltaic cell similar to a solar cell but tuned to the spectrum being admitted from the hot object.

<span class="mw-page-title-main">Infrared detector</span>

An infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic (photodetectors).

<span class="mw-page-title-main">Zinc telluride</span> Chemical compound

Zinc telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct band gap of 2.26 eV. It is usually a p-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond.

<span class="mw-page-title-main">Gallium antimonide</span> Chemical compound

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a room temperature lattice constant of about 0.610 nm. It has a room temperature direct bandgap of approximately 0.73 eV.

<span class="mw-page-title-main">Bismuth telluride</span> Chemical compound

Bismuth telluride is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor, which, when alloyed with antimony or selenium, is an efficient thermoelectric material for refrigeration or portable power generation. Bi2Te3 is a topological insulator, and thus exhibits thickness-dependent physical properties.

<span class="mw-page-title-main">Thermoelectric generator</span> Device that converts heat flux into electrical energy

A thermoelectric generator (TEG), also called a Seebeck generator, is a solid state device that converts heat directly into electrical energy through a phenomenon called the Seebeck effect. Thermoelectric generators function like heat engines, but are less bulky and have no moving parts. However, TEGs are typically more expensive and less efficient.

<span class="mw-page-title-main">Antimony telluride</span> Chemical compound

Antimony telluride is an inorganic compound with the chemical formula Sb2Te3. As is true of other pnictogen chalcogenide layered materials, it is a grey crystalline solid with layered structure. Layers consist of two atomic sheets of antimony and three atomic sheets of tellurium and are held together by weak van der Waals forces. Sb2Te3 is a narrow-gap semiconductor with a band gap 0.21 eV; it is also a topological insulator, and thus exhibits thickness-dependent physical properties.

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Zinc cadmium phosphide arsenide (Zn-Cd-P-As) is a quaternary system of group II (IUPAC group 12) and group V (IUPAC group 15) elements. Many of the inorganic compounds in the system are II-V semiconductor materials. The quaternary system of II3V2 compounds, (Zn1−xCdx)3(P1−yAsy)2, has been shown to allow solid solution continuously over the whole compositional range. This material system and its subsets have applications in electronics, optoelectronics, including photovoltaics, and thermoelectrics.

Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs1-xSbx), is a ternary III-V semiconductor compound. x indicates the fractions of arsenic and antimony in the alloy according to the aforementioned formula; it can take on any value between 0 and 1. GaAsSb refers generally to any composition of the alloy. It is considered as an alloy between gallium arsenide (GaAs) and gallium antimonide (GaSb).

Indium arsenide antimonide, also known as indium antimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered as an alloy between indium arsenide (InAs) and indium antimonide (InSb). x indicates the fractions of arsenic and antimony in the alloy according to the aforementioned formula; it can take on any value between 0 and 1. InAsSb refers generally to any composition of the alloy.

References

  1. Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, Florida: CRC Press, pp. 4–95, ISBN   0-8493-0594-2
  2. Li, Jing-Bo; Record, Marie-Christine; Tedenac, Jean-Claude (2007). "A thermodynamic assessment of the Sb-Zn system". Journal of Alloys and Compounds. 438 (1–2): 171–177. doi:10.1016/j.jallcom.2006.08.035.
  3. Seebeck (1822). "Magnetische Polarisation der Metalle und Erze durch Temperatur-Differenz" [Magnetic polarization of metals and ores by temperature differences]. Abhandlungen der Königlichen Akademie der Wissenschaften zu Berlin (in German): 265–373.
  4. Cove (1906). "THERMOELECTRIC BATTERY AND APPARATUS" (PDF).