Zinc nitride

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Zinc nitride
Tl2O3structure.jpg
Identifiers
3D model (JSmol)
ECHA InfoCard 100.013.826 OOjs UI icon edit-ltr-progressive.svg
EC Number
  • 215-207-3
PubChem CID
UNII
  • InChI=1S/2N.3Zn/q2*-1;;;+2
    Key: AKJVMGQSGCSQBU-UHFFFAOYSA-N
  • [N-]=[Zn].[N-]=[Zn].[Zn+2]
Properties
Zn3N2
Molar mass 224.154 g/mol
Appearanceblue-gray cubic crystals [1]
Density 6.22 g/cm3, solid [1]
Melting point decomposes 700°C [1]
insoluble, reacts
Structure
Cubic, cI80
Ia-3, No. 206 [2]
Hazards
GHS labelling:
GHS-pictogram-exclam.svg
Warning
H315, H319
P264, P280, P302+P352, P305+P351+P338, P321, P332+P313, P337+P313, P362
NFPA 704 (fire diamond)
NFPA 704.svgHealth 1: Exposure would cause irritation but only minor residual injury. E.g. turpentineFlammability 0: Will not burn. E.g. waterInstability 2: Undergoes violent chemical change at elevated temperatures and pressures, reacts violently with water, or may form explosive mixtures with water. E.g. white phosphorusSpecial hazard W: Reacts with water in an unusual or dangerous manner. E.g. sodium, sulfuric acid
1
0
2
W
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Yes check.svgY  verify  (what is  Yes check.svgYX mark.svgN ?)

Zinc nitride (Zn3 N2) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.

Contents

Chemical properties

Zinc nitride can be obtained by thermally decomposing zincamide (zinc diamine) [3] in an anaerobic environment, at temperatures in excess of 200 °C. The by-product of the reaction is ammonia. [4]

3Zn(NH2)2 → Zn3N2 + 4NH3

It can also be formed by heating zinc to 600 °C in a current of ammonia; the by-product is hydrogen gas. [3] [5]

3Zn + 2NH3 → Zn3N2 + 3H2

The decomposition of Zinc Nitride into the elements at the same temperature is a competing reaction. [6] At 700 °C Zinc Nitride decomposes. [1] It has also been made by producing an electric discharge between zinc electrodes in a nitrogen atmosphere. [6] [7] Thin films have been produced by chemical vapour deposition of Bis(bis(trimethylsilyl)amido]zinc with ammonia gas onto silica or ZnO coated alumina at 275 to 410 °C. [8]

The crystal structure is anti-isomorphous with Manganese(III) oxide. (bixbyite). [2] [7] The heat of formation is c. 24 kilocalories (100 kJ) per mol. [7] It is a semiconductor with a reported bandgap of c. 3.2eV, [9] however, a thin zinc nitride film prepared by electrolysis of molten salt mixture containing Li3N with a zinc electrode showed a band-gap of 1.01 eV. [10]

Zinc nitride reacts violently with water to form ammonia and zinc oxide. [3] [4]

Zn3N2 + 3H2O → 3ZnO + 2NH3

Zinc nitride reacts with lithium (produced in an electrochemical cell) by insertion. The initial reaction is the irreversible conversion into LiZn in a matrix of beta-Li3N. These products then can be converted reversibly and electrochemically into LiZnN and metallic Zn. [11] [12]

See also

Related Research Articles

<span class="mw-page-title-main">Boron nitride</span> Refractory compound of boron and nitrogen with formula BN

Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.

<span class="mw-page-title-main">Electrolysis</span> Technique in chemistry and manufacturing

In chemistry and manufacturing, electrolysis is a technique that uses direct electric current (DC) to drive an otherwise non-spontaneous chemical reaction. Electrolysis is commercially important as a stage in the separation of elements from naturally occurring sources such as ores using an electrolytic cell. The voltage that is needed for electrolysis to occur is called the decomposition potential. The word "lysis" means to separate or break, so in terms, electrolysis would mean "breakdown via electricity".

<span class="mw-page-title-main">Gallium nitride</span> Chemical compound

Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

<span class="mw-page-title-main">Zinc oxide</span> White powder insoluble in water

Zinc oxide is an inorganic compound with the formula ZnO. It is a white powder that is insoluble in water. ZnO is used as an additive in numerous materials and products including cosmetics, food supplements, rubbers, plastics, ceramics, glass, cement, lubricants, paints, sunscreens, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, semi conductors, and first-aid tapes. Although it occurs naturally as the mineral zincite, most zinc oxide is produced synthetically.

<span class="mw-page-title-main">Zinc chloride</span> Chemical compound

Zinc chloride is the name of inorganic chemical compounds with the formula ZnCl2. It forms hydrates. Zinc chloride, anhydrous and its hydrates are colorless or white crystalline solids, and are highly soluble in water. Five hydrates of zinc chloride are known, as well as four forms of anhydrous zinc chloride. This salt is hygroscopic and even deliquescent. Zinc chloride finds wide application in textile processing, metallurgical fluxes, and chemical synthesis. No mineral with this chemical composition is known aside from the very rare mineral simonkolleite, Zn5(OH)8Cl2·H2O.

In chemistry, a nitride is an inorganic compound of nitrogen. The "nitride" anion, N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occurring. Some nitrides have a found applications, such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si3N4), and semiconductors (e.g., gallium nitride, GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics. Metal nitrido complexes are also common.

<span class="mw-page-title-main">Lithium nitride</span> Chemical compound

Lithium nitride is a compound with the formula Li3N. It is the only stable alkali metal nitride. The solid has a reddish-pink color and high melting point.

<span class="mw-page-title-main">Lithium fluoride</span> Chemical compound

Lithium fluoride is an inorganic compound with the chemical formula LiF. It is a colorless solid that transitions to white with decreasing crystal size. Although odorless, lithium fluoride has a bitter-saline taste. Its structure is analogous to that of sodium chloride, but it is much less soluble in water. It is mainly used as a component of molten salts. Partly because Li and F are both light elements, and partly because F2 is highly reactive, formation of LiF from the elements releases one of the highest energies per mass of reactants, second only to that of BeO.

<span class="mw-page-title-main">Germane</span> Chemical compound

Germane is the chemical compound with the formula GeH4, and the germanium analogue of methane. It is the simplest germanium hydride and one of the most useful compounds of germanium. Like the related compounds silane and methane, germane is tetrahedral. It burns in air to produce GeO2 and water. Germane is a group 14 hydride.

<span class="mw-page-title-main">Zinc telluride</span> Chemical compound

Zinc telluride is a binary chemical compound with the formula ZnTe. This solid is a semiconductor material with a direct band gap of 2.26 eV. It is usually a p-type semiconductor. Its crystal structure is cubic, like that for sphalerite and diamond.

Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials.

<span class="mw-page-title-main">Zinc phosphide</span> Chemical compound

Zinc phosphide (Zn3P2) is an inorganic chemical compound. It is a grey solid, although commercial samples are often dark or even black. It is used as a rodenticide. Zn3P2 is a II-V semiconductor with a direct band gap of 1.5 eV and may have applications in photovoltaic cells. A second compound exists in the zinc-phosphorus system, zinc diphosphide (ZnP2).

<span class="mw-page-title-main">Indium(III) oxide</span> Chemical compound

Indium(III) oxide (In2O3) is a chemical compound, an amphoteric oxide of indium.

<span class="mw-page-title-main">Lithium imide</span> Chemical compound

Lithium imide is an inorganic compound with the chemical formula Li2NH. This white solid can be formed by a reaction between lithium amide and lithium hydride.

<span class="mw-page-title-main">Tantalum(V) ethoxide</span> Chemical compound

Tantalum(V) ethoxide is a metalorganic compound with formula Ta2(OC2H5)10, often abbreviated as Ta2(OEt)10. It is a colorless solid that dissolves in some organic solvents but hydrolyzes readily. It is used to prepare films of tantalum(V) oxide.

Two dimensional hexagonal boron nitride is a material of comparable structure to graphene with potential applications in e.g. photonics., fuel cells and as a substrate for two-dimensional heterostructures. 2D h-BN is isostructural to graphene, but where graphene is conductive, 2D h-BN is a wide-gap insulator.

Molecular layer deposition (MLD) is a vapour phase thin film deposition technique based on self-limiting surface reactions carried out in a sequential manner. Essentially, MLD resembles the well established technique of atomic layer deposition (ALD) but, whereas ALD is limited to exclusively inorganic coatings, the precursor chemistry in MLD can use small, bifunctional organic molecules as well. This enables, as well as the growth of organic layers in a process similar to polymerization, the linking of both types of building blocks together in a controlled way to build up organic-inorganic hybrid materials.

Zinc oxide (ZnO) nanostructures are structures with at least one dimension on the nanometre scale, composed predominantly of zinc oxide. They may be combined with other composite substances to change the chemistry, structure or function of the nanostructures in order to be used in various technologies. Many different nanostructures can be synthesised from ZnO using relatively inexpensive and simple procedures. ZnO is a semiconductor material with a wide band gap energy of 3.3eV and has the potential to be widely used on the nanoscale. ZnO nanostructures have found uses in environmental, technological and biomedical purposes including ultrafast optical functions, dye-sensitised solar cells, lithium-ion batteries, biosensors, nanolasers and supercapacitors. Research is ongoing to synthesise more productive and successful nanostructures from ZnO and other composites. ZnO nanostructures is a rapidly growing research field, with over 5000 papers published during 2014-2019.

A chloride nitride is a mixed anion compound containing both chloride (Cl) and nitride ions (N3−). Another name is metallochloronitrides. They are a subclass of halide nitrides or pnictide halides.

References

  1. 1 2 3 4 CRC Handbook of Chemistry and Physics (96 ed.), §4-100 Physical Constants of Inorganic Compounds
  2. 1 2 Partin, D. E.; Williams, D. J.; O'Keeffe, M. (1997). "The Crystal Structures of Mg3N2 and Zn3N2". Journal of Solid State Chemistry. 132 (1): 56–59. Bibcode:1997JSSCh.132...56P. doi:10.1006/jssc.1997.7407.
  3. 1 2 3 Roscoe, H. E.; Schorlemmer, C. (1907) [1878]. A Treatise on Chemistry: Volume II, The Metals (4th ed.). London: Macmillan. pp. 650–651. Retrieved 2007-11-01.
  4. 1 2 Bloxam, C. L. (1903). Chemistry, Inorganic and Organic (9th ed.). Philadelphia: P. Blakiston's Son & Co. p.  380 . Retrieved 2007-10-31.
  5. Lowry, M. T. (1922). Inorganic Chemistry. Macmillan. p. 872. Retrieved 2007-11-01.
  6. 1 2 Maxtead, E.B. (1921), Ammonia and the Nitrides, pp. 69–20
  7. 1 2 3 Mellor, J.W. (1964), A Comprehensive Treatise on Inorganic and Theoretical Chemistry, vol. 8, Part 1, pp. 160–161
  8. Maile, E.; Fischer, R. A. (Oct 2005), "MOCVD of the Cubic Zinc Nitride Phase, Zn3N2, Using Zn[N(SiMe3)2]2 and Ammonia as Precursors", Chemical Vapor Deposition, 11 (10): 409–414, doi:10.1002/cvde.200506383
  9. Ebru, S.T.; Ramazan, E.; Hamide, K. (2007), "Structural and Optical Properties of Zinc Nitride Films Prepared by Pulsed Filtered Cathodic Vacuum Arc Deposition" (PDF), Chin. Phys. Lett., 24 (12): 3477, Bibcode:2007ChPhL..24.3477S, doi:10.1088/0256-307x/24/12/051, S2CID   123496085
  10. Toyoura, Kazuaki; Tsujimura, Hiroyuki; Goto, Takuya; Hachiya, Kan; Hagiwara, Rika; Ito, Yasuhiko (2005), "Optical properties of zinc nitride formed by molten salt electrochemical process", Thin Solid Films, 492 (1–2): 88–92, Bibcode:2005TSF...492...88T, doi:10.1016/j.tsf.2005.06.057
  11. Amatucci, G. G.; Pereira, N. (2004). "Nitride and Silicide Negative Electrodes". In Nazri, G.-A.; Pistoia, G. (eds.). Lithium Batteries: Science and Technology. Kluwer Academic Publishers. p. 256. ISBN   978-1-4020-7628-2 . Retrieved 2007-11-01.
  12. Pereiraa, N.; Klein, L.C.; Amatuccia, G.G. (2002), "The Electrochemistry of Zn3 N 2 and LiZnN - A Lithium Reaction Mechanism for Metal Nitride Electrodes", Journal of the Electrochemical Society, 149 (3): A262, Bibcode:2002JElS..149A.262P, doi:10.1149/1.1446079

Further reading