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Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
An electrode is an electrical conductor used to make contact with a nonmetallic part of a circuit. Electrodes are essential parts of batteries that can consist of a variety of materials depending on the type of battery.
Tungsten carbide is a chemical compound containing equal parts of tungsten and carbon atoms. In its most basic form, tungsten carbide is a fine gray powder, but it can be pressed and formed into shapes through sintering for use in industrial machinery, cutting tools, chisels, abrasives, armor-piercing shells and jewelry.
Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 kg/m3 (22 lb/cu yd). It is one of the densest known gases under standard conditions. WF6 is commonly used by the semiconductor industry to form tungsten films, through the process of chemical vapor deposition. This layer is used in a low-resistivity metallic "interconnect". It is one of seventeen known binary hexafluorides.
Borazon is a brand name of a cubic form of boron nitride (cBN). Its color ranges from black to brown and gold, depending on the chemical bond. It is one of the hardest known materials, along with various forms of diamond and other kinds of boron nitride. Borazon is a crystal created by heating equal quantities of boron and nitrogen at temperatures greater than 1800 °C (3300 °F) at 7 GPa.
A superhard material is a material with a hardness value exceeding 40 gigapascals (GPa) when measured by the Vickers hardness test. They are virtually incompressible solids with high electron density and high bond covalency. As a result of their unique properties, these materials are of great interest in many industrial areas including, but not limited to, abrasives, polishing and cutting tools, disc brakes, and wear-resistant and protective coatings.
A heating element converts electrical energy into heat through the process of Joule heating. Electric current running through the element encounters resistance, resulting in heating of the element. Unlike the Peltier effect, this process is independent of the direction of current.
Titanium nitride is an extremely hard ceramic material, often used as a physical vapor deposition (PVD) coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.
A diffusion barrier is a thin layer of metal usually placed between two other metals. It is done to act as a barrier to protect either one of the metals from corrupting the other.
In vacuum tubes and gas-filled tubes, a hot cathode or thermionic cathode is a cathode electrode which is heated to make it emit electrons due to thermionic emission. This is in contrast to a cold cathode, which does not have a heating element. The heating element is usually an electrical filament heated by a separate electric current passing through it. Hot cathodes typically achieve much higher power density than cold cathodes, emitting significantly more electrons from the same surface area. Cold cathodes rely on field electron emission or secondary electron emission from positive ion bombardment, and do not require heating. There are two types of hot cathode. In a directly heated cathode, the filament is the cathode and emits the electrons. In an indirectly heated cathode, the filament or heater heats a separate metal cathode electrode which emits the electrons.
Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si
3N
4 is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ″Silicon nitride″ commonly refers to this specific composition. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H
3PO
4. It is very hard. It has a high thermal stability with strong optical nonlinearities for all-optical applications.
Tungsten silicide (WSi2) is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material.
Tungsten(IV) telluride (WTe2) is an inorganic semimetallic chemical compound. In October 2014, tungsten ditelluride was discovered to exhibit an extremely large magnetoresistance: 13 million percent resistance increase in a magnetic field of 60 tesla at 0.5 kelvin. The resistance is proportional to the square of the magnetic field and shows no saturation. This may be due to the material being the first example of a compensated semimetal, in which the number of mobile holes is the same as the number of electrons. Tungsten ditelluride has layered structure, similar to many other transition metal dichalcogenides, but its layers are so distorted that the honeycomb lattice many of them have in common is in WTe2 hard to recognize. The tungsten atoms instead form zigzag chains, which are thought to behave as one-dimensional conductors. Unlike electrons in other two-dimensional semiconductors, the electrons in WTe2 can easily move between the layers.
Vanadium nitride, VN, is a chemical compound of vanadium and nitrogen.
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal–oxide–semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays. It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon"). Companies offering SONOS-based products include Cypress Semiconductor, Macronix, Toshiba, United Microelectronics Corporation and Floadia.
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel.
Dry lubricants or solid lubricants are materials that, despite being in the solid phase, are able to reduce friction between two surfaces sliding against each other without the need for a liquid oil medium.
In materials science, MXenes are a class of two-dimensional inorganic compounds, that consist of atomically thin layers of transition metal carbides, nitrides, or carbonitrides. MXenes accept a variety of hydrophilic terminations. MXenes were first reported in 2012.
A chloride nitride is a mixed anion compound containing both chloride (Cl−) and nitride ions (N3−). Another name is metallochloronitrides. They are a subclass of halide nitrides or pnictide halides.
References
- ↑ Liu, Chengxiang; Wang, Chao; Meng, Xiangwei; Li, Xingyun; Qing, Qing; Wang, Xianfen; Xue, Ruiying; Yu, Qiang; Yang, Jialei; Wang, Kuikui; Zhao, Xiaoju; Chen, Wei; Qiao, Zhen-An; Zhao, Xiu Song (2020-11-01). "Tungsten nitride nanoparticles anchored on porous borocarbonitride as high-rate anode for lithium ion batteries" . Chemical Engineering Journal. 399: 125705. doi:10.1016/j.cej.2020.125705. ISSN 1385-8947. S2CID 224904157.
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