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Allotropy or allotropism is the property of some chemical elements to exist in two or more different forms, in the same physical state, known as allotropes of the elements. Allotropes are different structural modifications of an element: the atoms of the element are bonded together in different manners. For example, the allotropes of carbon include diamond, graphite, graphene, and fullerenes.
Boron nitride is a thermally and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN. It exists in various crystalline forms that are isoelectronic to a similarly structured carbon lattice. The hexagonal form corresponding to graphite is the most stable and soft among BN polymorphs, and is therefore used as a lubricant and an additive to cosmetic products. The cubic variety analogous to diamond is called c-BN; it is softer than diamond, but its thermal and chemical stability is superior. The rare wurtzite BN modification is similar to lonsdaleite but slightly softer than the cubic form.
In crystallography, the cubiccrystal system is a crystal system where the unit cell is in the shape of a cube. This is one of the most common and simplest shapes found in crystals and minerals.
Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
In chemistry, a nitride is a chemical compound of nitrogen. Nitrides can be inorganic or organic, ionic or covalent. The nitride anion, N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occurring. Some nitrides have a found applications, such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si3N4), and semiconductors (e.g., gallium nitride, GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics. Metal nitrido complexes are also common.
Indium nitride is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has only one lattice constant, the distance between atoms, but in general lattices in three dimensions have six lattice constants: the lengths a, b, and c of the three cell edges meeting at a vertex, and the angles α, β, and γ between those edges.
Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si
3N
4 is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ″Silicon nitride″ commonly refers to this specific composition. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H
3PO
4. It is very hard. It has a high thermal stability with strong optical nonlinearities for all-optical applications.
Hafnium carbide (HfC) is a chemical compound of hafnium and carbon. Previously the material was estimated to have a melting point of about 3,900 °C. More recent tests have been able to conclusively prove that the substance has an even higher melting point of 3,958 °C exceeding those of tantalum carbide and tantalum hafnium carbide which were both previously estimated to be higher. However, it has a low oxidation resistance, with the oxidation starting at temperatures as low as 430 °C. Experimental testing in 2018 confirmed the higher melting point yielding a result of 3,982 (±30°C) with a small possibility that the melting point may even exceed 4,000°C.
Vanadium nitride, VN, is a chemical compound of vanadium and nitrogen.
Chromium nitride is a chemical compound of chromium and nitrogen with the formula CrN. It is very hard, and is extremely resistant to corrosion. It is an interstitial compound, with nitrogen atoms occupying the octahedral holes in the chromium lattice: as such, it is not strictly a chromium(III) compound nor does it contain nitride ions (N3−). Chromium forms a second interstitial nitride, dichromium nitride, Cr2N.
Yttrium nitride, YN, is a nitride of yttrium.
A two-dimensional semiconductor is a type of natural semiconductor with thicknesses on the atomic scale. Geim and Novoselov et al. initiated the field in 2004 when they reported a new semiconducting material graphene, a flat monolayer of carbon atoms arranged in a 2D honeycomb lattice. A 2D monolayer semiconductor is significant because it exhibits stronger piezoelectric coupling than traditionally employed bulk forms. This coupling could enable applications. One research focus is on designing nanoelectronic components by the use of graphene as electrical conductor, hexagonal boron nitride as electrical insulator, and a transition metal dichalcogenide as semiconductor.
A chloride nitride is a mixed anion compound containing both chloride (Cl−) and nitride ions (N3−). Another name is metallochloronitrides. They are a subclass of halide nitrides or pnictide halides.
Europium(III) nitride is a binary inorganic compound of europium and nitrogen with the chemical formula EuN.
Plutonium nitride is a binary inorganic compound of plutonium and nitrogen with the chemical formula PuN.
Curium nitride is a binary inorganic compound of curium and nitrogen with the chemical formula CmN.
Protactinium nitride is a binary inorganic compound of protactinium and nitrogen with the chemical formula PaN.
Thulium nitride is a binary inorganic compound of thulium and nitrogen with the chemical formula TmN. It can be prepared by reacting thulium amalgam with nitrogen at high temperature.
References
- ↑ Pandit, Premlata; Srivastava, Vipul; Rajagopalan, M.; Sanyal, Sankar P. (15 December 2008). "Pressure-induced electronic and structural phase transformation properties in half-metallic PmN: A first-principles approach". Physica B: Condensed Matter . 403 (23): 4333–4337. doi:10.1016/j.physb.2008.09.036. ISSN 0921-4526 . Retrieved 8 February 2024.
- ↑ Murugan, A.; Rajeswarapalanichamy, R.; Santhosh, M.; Iyakutti, K. (1 July 2015). "Structural, electronic, mechanical and magnetic properties of rare earth nitrides REN (RE= Pm, Eu and Yb)". Journal of Magnetism and Magnetic Materials . 385: 441–450. doi:10.1016/j.jmmm.2015.03.042. ISSN 0304-8853 . Retrieved 8 February 2024.
- ↑ "mp-1018160: PmN (cubic, Fm-3m, 225)". Materials Project . Retrieved 8 February 2024.
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