| Names | |
|---|---|
| Other names holmium mononitride, azanylidyneholmium | |
| Identifiers | |
3D model (JSmol) | |
| ChemSpider | |
| ECHA InfoCard | 100.031.565 |
| EC Number |
|
PubChem CID | |
CompTox Dashboard (EPA) | |
| |
| |
| Properties | |
| HoN | |
| Molar mass | 178.937 g·mol−1 |
| Density | 10.6 g/cm3 [1] |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
Holmium nitride is a binary inorganic compound of holmium and nitrogen with the chemical formula HoN. [2] [3] [4] [5]
To produce holmium nitride nanoparticles, a plasma arc discharge technique can be employed.
In this process, holmium granules are placed in a copper crucible, which acts as the anode, while a tungsten cathode is used. Before starting, the furnace is evacuated , and this step is repeated twice to eliminate most of the air. Afterward, the furnace is filled with argon and nitrogen gas to a partial pressure of 4 kPa and a mixture ratio of 80% nitrogen to 20% argon.
Once the furnace is prepared, a current of ~220 A is applied along ~50 V, creating an arc plasma that generates holmium vapor. The holmium vapor then continues to react with the nitrogen gas in the surrounding environment, resulting in the formation of holmium nitride nanoparticles. [6]
The compound forms crystals of cubic system. [1]
Argon is a chemical element; it has symbol Ar and atomic number 18. It is in group 18 of the periodic table and is a noble gas. Argon is the third most abundant gas in Earth's atmosphere, at 0.934%. It is more than twice as abundant as water vapor, 23 times as abundant as carbon dioxide, and more than 500 times as abundant as neon. Argon is the most abundant noble gas in Earth's crust, comprising 0.00015% of the crust.
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
Holmium is a chemical element; it has symbol Ho and atomic number 67. It is a rare-earth element and the eleventh member of the lanthanide series. It is a relatively soft, silvery, fairly corrosion-resistant and malleable metal. Like many other lanthanides, holmium is too reactive to be found in native form, as pure holmium slowly forms a yellowish oxide coating when exposed to air. When isolated, holmium is relatively stable in dry air at room temperature. However, it reacts with water and corrodes readily, and also burns in air when heated.
The pnictogens are the chemical elements in group 15 of the periodic table. This group is also known as the nitrogen group or nitrogen family. Group 15 consists of the elements nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), and moscovium (Mc).
Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 kg/m3 (22 lb/cu yd). It is the only known gaseous transition metal compound and the densest known gas under standard ambient temperature and pressure. WF6 is commonly used by the semiconductor industry to form tungsten films, through the process of chemical vapor deposition. This layer is used in a low-resistivity metallic "interconnect". It is one of seventeen known binary hexafluorides.
Chlorine trifluoride is an interhalogen compound with the formula ClF3. It is a colorless, poisonous, corrosive, and extremely reactive gas that condenses to a pale-greenish yellow liquid, the form in which it is most often sold. It is famous for its extreme oxidation properties. The compound is primarily of interest in plasmaless cleaning and etching operations in the semiconductor industry, in nuclear reactor fuel processing, historically as a component in rocket fuels, and various other industrial operations owing to its corrosive nature.
Titanium nitride is an extremely hard ceramic material, often used as a physical vapor deposition (PVD) coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.
Cadmium selenide is an inorganic compound with the formula CdSe. It is a black to red-black solid that is classified as a II-VI semiconductor of the n-type. It is a pigment, but applications are declining because of environmental concerns.
Nitrogen trifluoride is the inorganic compound with the formula. It is a colorless, non-flammable, toxic gas with a slightly musty odor. In contrast with ammonia, it is nonbasic. It finds increasing use within the manufacturing of flat-panel displays, photovoltaics, LEDs and other microelectronics. NF
3 is a greenhouse gas, with a global warming potential (GWP) 17,200 times greater than that of CO
2 when compared over a 100-year period.
Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si
3N
4 is the most thermodynamically stable and commercially important of the silicon nitrides, and the term ″Silicon nitride″ commonly refers to this specific composition. It is a white, high-melting-point solid that is relatively chemically inert, being attacked by dilute HF and hot H
3PO
4. It is very hard. It has a high thermal stability with strong optical nonlinearities for all-optical applications.
Nitriding is a heat treating process that diffuses nitrogen into the surface of a metal to create a case-hardened surface. These processes are most commonly used on low-alloy steels. They are also used on titanium, aluminium and molybdenum.
Zinc nitride (Zn3N2) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.
Tungsten disilicide (WSi2) is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material.
Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) alternating current (AC) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.
Ferritic nitrocarburizing or FNC, also known by the proprietary names "Tenifer", "Tufftride", Melonite, and "Arcor", is a range of proprietary case hardening processes that diffuse nitrogen and carbon into ferrous metals at sub-critical temperatures during a salt bath. Other methods of ferritic nitrocarburizing include gaseous processes such as Nitrotec and ion (plasma) ones. The processing temperature ranges from 525 °C (977 °F) to 625 °C (1,157 °F), but usually occurs at 565 °C (1,049 °F). Steel and other ferrous alloys remain in the ferritic phase region at this temperature. This allows for better control of the dimensional stability that would not be present in case hardening processes that occur when the alloy is transitioned into the austenitic phase. There are four main classes of ferritic nitrocarburizing: gaseous, salt bath, ion or plasma, and fluidized-bed.
Boron triazide, also known as triazidoborane, is a thermally unstable compound of boron and nitrogen with a nitrogen content of 92.1 %. Formally, it is the triazido derivative of borane and is a covalent inorganic azide. The high-energy compound, which has the propensity to undergo spontaneous explosive decomposition, was first described in 1954 by Egon Wiberg and Horst Michaud of the University of Munich.
Holmium (III) nitrate is an inorganic compound, a salt of holmium and nitric acid with the chemical formula Ho(NO3)3. The compound forms yellowish crystals, dissolves in water, also forms crystalline hydrates.
Holmium phosphide is a binary inorganic compound of holmium and phosphorus with the chemical formula HoP. The compound forms dark crystals and does not dissolve in water.
Holmium arsenide is a binary inorganic compound of holmium and arsenide with the chemical formula HoAs.
Holmium bismuthide is a binary inorganic compound of holmium and bismuth with the chemical formula HoBi.
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