Scandium nitride

Last updated
Scandium nitride
NaCl polyhedra.svg
Names
IUPAC name
Scandium nitride
Other names
Azanylidynescandium
Nitridoscandium
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.042.938 OOjs UI icon edit-ltr-progressive.svg
EC Number
  • 247-247-2
PubChem CID
  • InChI=1S/N.Sc
    Key: CUOITRGULIVMPC-UHFFFAOYSA-N
  • N#[Sc]
Properties
ScN
Molar mass 58.963
Density 4.4 g/cm3
Melting point 2,600 °C (4,710 °F; 2,870 K)
Hazards
GHS labelling:
GHS-pictogram-exclam.svg
Danger
H228
Related compounds
Other anions
Scandium phosphide
Scandium arsenide
Scandium antimonide
Scandium bismuthide
Other cations
Yttrium nitride
Lutetium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation. [1] It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. [1] [2] These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. [2] [3] Scandium nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate. [4] Scandium nitride is the first nitride semiconductor reported to be synthesized without an active Nitrogen plasma source using the Molecular Beam Epitaxy (MBE) technique. [5]


References

  1. 1 2 Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W (August 2004). "Crystal Growth and Properties of Scandium Nitride". Journal of Materials Science: Materials in Electronics. 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c. S2CID   98462001.
  2. 1 2 Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN" . Physical Review Materials. 3 (2): 020301. Bibcode:2019PhRvM...3b0301B. doi:10.1103/physrevmaterials.3.020301. ISSN   2475-9953. S2CID   139544303.
  3. ↑ Zhang, Guodong; Kawamura, Fumio; Oshima, Yuichi; Villora, Encarnacion; Shimamura, Kiyoshi (4 August 2016). "Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts". International Journal of Applied Ceramic Technology. 13 (6): 1134–1138. doi:10.1111/ijac.12576.
  4. ↑ Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2". Japanese Journal of Applied Physics. 45 (2): L83 –L85. Bibcode:2006JaJAP..45L..83Y. doi:10.1143/JJAP.45.L83. S2CID   121206924.
  5. ↑ Savant, Chandrashekhar P.; Verma, Anita; Nguyen, Thai-Son; van Deurzen, Len; Chen, Yu-Hsin; He, Zhiren; Rezaie, Salva S.; Gollwitzer, Jakob; Gregory, Benjamin; Sarker, Suchismita; Ruff, Jacob; Khalsa, Guru; Singer, Andrej; Muller, David A.; Xing, Huili G. (2024-11-06). "Self-activated epitaxial growth of ScN films from molecular nitrogen at low temperatures". APL Materials. 12 (11): 111108. doi: 10.1063/5.0222995 . ISSN   2166-532X.


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