Gallium acetylacetonate

Gallium acetylacetonate

Names
IUPAC name (Z)-4-Bis{[(Z)-4-oxopent-2-en-2-yl]oxy}alumanyloxypent-3-en-2-one
Other names Gallium acetylacetonate
Identifiers
CAS Number	14405-43-7
3D model (JSmol)	Interactive image
ChemSpider	4588244
ECHA InfoCard	100.034.873
PubChem CID	16717626
InChI InChI=1S/3C5H8O2.Ga/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-; Key: ZVYYAYJIGYODSD-LNTINUHCSA-K
SMILES C/C(=C/C(=O)C)/O[Ga](O/C(=C\C(=O)C)/C)O/C(=C\C(=O)C)/C
Properties
Chemical formula	GaC15H21O6
Molar mass	367.05 g/mol
Appearance	White solid
Density	1.42 g/cm3
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references

Gallium acetylacetonate, also referred to as Ga(acac)₃, is a coordination complex with formula Ga(C₅H₇O₂)₃. This gallium complex with three acetylacetonate ligands is used in research. The molecule has D₃ symmetry, being isomorphous with other octahedral tris(acetylacetonate)s. ^[1]

Uses

Gallium oxide thin films can be produced by atomic layer epitaxy (ALE) by combining gallium acetylacetonate with either water or ozone as the precursor. ^[2] Ga(acac)₃ can also be used for low temperature growth of high purity gallium nitride nano-wires and nano-needles. ^{[3] [4]}

References

1. Dymock, K.; Palenik, G. J. (1974). "Tris(acetylacetonato)gallium(III)". Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry. 30 (5): 1364–1366. Bibcode:1974AcCrB..30.1364D. doi:10.1107/S0567740874004833.
2. Nieminen, Minna; Niinistö, Lauri; Rauhala, Eero (1996). "Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy". J. Mater. Chem. 6: 27–31. doi:10.1039/JM9960600027.
3. Chang, Ko-Wei; Wu, Jih-Jen (2002). "Low-Temperature Catalytic Synthesis of Gallium Nitride Nanowires". The Journal of Physical Chemistry B. 106 (32): 7796–7799. doi:10.1021/jp026152t.
4. Chang, K.-W.; Wu, J.-J. (2003). "Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor". Applied Physics A: Materials Science & Processing. 77 (6): 769–774. Bibcode:2003ApPhA..77..769C. doi:10.1007/s00339-003-2229-y.