Guohan Hu

Last updated

Guohan Hu
EducationPh.D. from Cornell University
OccupationElectrical engineering
Known forResearching magnetoresistive RAM
Awards IEEE Fellow

Guohan Hu is an electrical engineer specializing in magnetic storage and spintronics, and especially in the use of spin-transfer torque in magnetoresistive RAM, a type of non-volatile random-access memory. [1] She works for IBM Research at the Thomas J. Watson Research Center as a distinguished research staff member and manager of the MRAM Materials and Devices group. [2]

Hu has a Ph.D. from Cornell University, completed in 2002. [2] She was elected as an IEEE Fellow in 2022, "for contributions to Spin-Transfer-Torque MRAM materials and devices". [3] She was named a Fellow of the American Physical Society in 2023, "for pioneering advancements in the development of materials and devices for spin-transfer torque magnetic random access memory, resulting in breakthroughs that have significantly enhanced the performance, scalability, and reliability of next-generation non-volatile memory technologies". [4]

References

  1. ↑ Researchers celebrate 20th anniversary of IBM's invention of Spin Torque MRAM by demonstrating scalability for the next decade, IBM Research, July 7, 2016, retrieved 2023-04-15
  2. 1 2 Del Alamo, Jesús A. (July 2022), "Changes to the editorial board", IEEE Electron Device Letters, 43 (7): 994, Bibcode:2022IEDL...43..994D, doi: 10.1109/led.2022.3176520
  3. ↑ 2022 Newly Elevated Fellows (PDF), IEEE, archived from the original (PDF) on 2021-11-24, retrieved 2023-04-15
  4. ↑ "2023 Fellows", APS Fellow Archive, American Physical Society, retrieved 2023-10-19


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