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John D. Cressler | |
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| Born | 1961 |
| Education | Georgia Institute of Technology (BS) Columbia University (PhD) |
| Occupation(s) | Professor, Author |
| Website | johndcressler.com |
John D. Cressler (born 1961) is an American academic and author, [1] currently the Regents Professor and holder of the Schlumberger Chair in Electronics at Georgia Tech. [2]
John D. Cressler was born in 1961 and grew up in Georgia. He received his B.S. in physics from Georgia Tech in 1984, and his Ph.D. in applied physics from Columbia University in 1990. From 1984 to 1992, he was on the research staff at the IBM Thomas J. Watson Research Center, and from 1992 to 2002 he served on faculty at Auburn University. In 2002, he joined the faculty at Georgia Tech, and is currently Schlumberger Chair Professor of Electronics, in the School of Electrical and Computer Engineering. [3]
Cressler's research is focused on the advancement of silicon-germanium (SiGe) electronics, [4] [5] with particular application to extreme environments. [6] He has edited and authored various technical works related to SiGe and extreme environment electronics. [7]
The 2021 IEEE James H. Mulligan, Jr. Education Medal was presented to John D. Cressler for inspirational teaching and mentoring of undergraduate and graduate students. [8]
Cressler married his wife Maria while an undergraduate at Georgia Tech. They have three children. [9]
Cressler has authored three books related to SiGe electronics engineering, two works of non-fiction, and two novels. [1]
Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature.
A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
Krishna Saraswat is a professor in Stanford Department of Electrical Engineering in the United States. He is an ISI Highly Cited Researcher in engineering, placing him in the top 250 worldwide in engineering research, and a recipient of IEEE's Andrew S. Grove Award for "seminal contributions to silicon process technology".
SiGe, or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high-temperature applications (>700 K).
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium. As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer, the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster.
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate.The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain. The introduction of the transistor is often considered one of the most important inventions in history.
Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
RF Micropower is a fabless semiconductor company based in Phoenix, Arizona that sells and licenses the RFuP technology that was initially developed by SJT Micropower, Inc. The company's proprietary technology enables high voltage Si-MESFET transistors to be fabricated on commercial SOI CMOS processes without altering the native process or adding additional fabrication steps which allows high levels of monolithic integration. These power transistors can operate at voltages that are 20 times higher than the baseline CMOS transistors and at several Watts of power. The technology has been implemented in various integrated circuit solutions including RF power amplifiers and power regulation circuits. According to their website, they have demonstrated Si-MESFETs at the 350 nm, 250 nm, 150 nm, 45 nm and 32 nm process nodes. The smallest process node for MESFETs on any type of substrate is currently 32 nm.
Mohamed M. Atalla was an Egyptian-American engineer, physicist, cryptographer, inventor and entrepreneur. He was a semiconductor pioneer who made important contributions to modern electronics. He is best known for the first working demonstration of the MOSFET in 1959, which along with Atalla's earlier surface passivation processes, had a significant impact on the development of the electronics industry. He is also known as the founder of the data security company Atalla Corporation, founded in 1972. He received the Stuart Ballantine Medal and was inducted into the National Inventors Hall of Fame for his important contributions to semiconductor technology as well as data security.
Kurt E. Petersen is an American inventor and entrepreneur. He is known primarily for his work on microelectromechanical systems. Petersen was elected a member of the United States National Academy of Engineering in 2001.
Roger Thomas Howe is the William E. Ayer Professor of Electrical Engineering at Stanford University. He earned a B.S. degree in physics from Harvey Mudd College and M.S. and Ph.D. degrees in electrical engineering from the University of California, Berkeley in 1981 and 1984, respectively. He was a faculty member at Carnegie-Mellon University from 1984-1985, at the Massachusetts Institute of Technology from 1985-1987, and at UC Berkeley between 1987-2005, where he was the Robert S. Pepper Distinguished Professor. He has been a faculty member of the School of Engineering at Stanford since 2005.
Germanium-tin is an alloy of the elements germanium and tin, both located in group 14 of the periodic table. It is only thermodynamically stable under a small composition range. Despite this limitation, it has useful properties for band gap and strain engineering of silicon-integrated optoelectronic and microelectronic semiconductor devices.
Aaron Roe Hawkins is an American engineer known for his work in optofluidics. He is a professor and chair in the department of electrical and computer engineering at Brigham Young University.
James F. "Jim" Gibbons is an American professor and academic administrator. He is credited with starting the semiconductor device fabrication laboratory at Stanford University that enabled the semiconductor industry and created Silicon Valley.
Dr. Gary Patton is an American technologist and business executive. He is currently the Corporate Vice President and General Manager of Design Enablement and Components Research in the Technology Development Group at Intel. He has spent most of his career in IBM, starting in IBM's Research Division and holding management and executive positions in IBM's Microelectronics Division in Technology Development, Design Enablement, Manufacturing, and Business Line Management.
Debbie Senesky is an associate professor of Aeronautics at Stanford University. She is the principal investigator of the EXtreme Environment Microsystems Laboratory, and studies nanomaterials in extreme environments.
Carmen S. Menoni is an Argentine-American physicist who is the University Distinguished Professor at Colorado State University. Her research considers oxide materials for interference coatings and spectrometry imaging. She is a Fellow of the Institute of Electrical and Electronics Engineers, American Physical Society, The Optical Society and SPIE. Menoni served as the President of the IEEE Photonics Society from 2020 to 2021.
Sandip Tiwari is an Indian-born electrical engineer and applied physicist. He is the Charles N. Mellowes Professor of Engineering at Cornell University. His previous roles were Director of National Nanotechnology Users Network, Director of the National Nanotechnology Infrastructure Network, and research scientist at IBM T. J. Watson Research Center. He is best known for his pioneer research in the fields of SiGe transistor and nanocrystal memory.
Silylgermane is an inorganic compound with the chemical formula H3Si−GeH3. It is a colorless gas with an unpleasant odor. It is unstable in air. It is very flammable, very toxic and corrosive. It reacts with alkali liberating hydrogen.
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