Joseph B. Bernstein

Last updated
Joseph B. Bernstein
Citizenship Israel
Alma mater Massachusetts Institute of Technology (Ph.D. and M.S.); Union College (B.S.)
Occupation Professor
Known for Reliability of microelectronic devices, packaging, system reliability modeling, gate oxide integrity, radiation effects, Flash and DRAM reliability, laser programmable metal interconnect
AwardsFulbright Senior Researcher/Lecturer (2004–2005), IEEE Senior Member (2003), NASA/ASEE Summer Faculty Research Fellow (1998)
Scientific career
Fields Microelectronics, Semiconductor device reliability, Physics of failure
Institutions Ariel University, Bar-Ilan University, Tel Aviv University, University of Maryland, MIT Lincoln Laboratory
Thesis Electrical characterization of polymeric insulation by electrically stimulated acoustic wave measurements  (1990)

Joseph B. Bernstein (commonly cited as Joseph Bernstein) is an Israeli professor of electrical and electronic engineering at the faculty of engineering, Ariel University [1] [2] [3] . He is recognized for his research in microelectronic device reliability and the physics of failure [4] [5] , system-level reliability modeling [6] , and failure mechanisms in advanced devices [7] [8] . Bernstein directs the Laboratory for Failure Analysis and Reliability of Electronic Systems at Ariel University and heads the university’s VLSI program [2] [9] .

Contents

Early life and education

Bernstein studied electrical engineering at Union College in Schenectady, New York, graduating summa cum laude in 1984 [2] . He later completed a master’s degree [10] in electrical engineering and a doctorate [11] in electrical engineering and computer science at the Massachusetts Institute of Technology between 1986 and 1990. He is Jewish [12] .

Academic career

After earning his doctorate, Bernstein joined the research staff at MIT Lincoln Laboratory, where he worked from 1990 to 1995 [2] . He taught as an adjunct professor at Boston University from 1991 to 1993 before moving to the University of Maryland, College Park, where he was assistant professor in reliability, materials, and nuclear engineering (1995–2001) and associate professor in mechanical engineering (2001–2008) [13] [14] [2] . He was a visiting associate professor at Tel Aviv University between 2003 and 2005 and held a Fulbright Senior Scholar award during that time [2] [15] . From 2006 to 2012 he was professor of engineering at Bar-Ilan University [16] , before joining Ariel University in 2012, where he continues to serve as professor of electrical and electronic engineering [1] [2] .

Research

Bernstein’s research spans a wide range of topics in semiconductor reliability and failure physics [17] . His work includes investigations of gate oxide breakdown [18] , hot-carrier effects [19] [20] , and electromigration [21] in advanced CMOS technologies. He has also studied the reliability of Flash and DRAM memory devices [22] and wide-bandgap semiconductors [23] [24] [25] . Bernstein has contributed to reliability modeling of complex systems [26] [27] , including aerospace and defense electronics [28] , and developed laser-programmable interconnect technologies used for circuit repair and redundancy [29] [30] . He has several patents in his name [31] [32] [33] [34] [35] [36] [37] [38] .

Books

Bernstein has authored or co-authored several books and technical handbooks on electronics reliability, including:

Professional affiliations

At Ariel University, Bernstein directs the Reliable Integrated Electronics Laboratory [2] . He also founded and advises the Israel Electronics Manufacturers Working Group on Reliability (ILTAM), established in 2005 [2] . He is a senior member of the Institute of Electrical and Electronics Engineers (IEEE) [3] .

Awards

Bernstein has received several professional honors, including recognition as a Fulbright Senior Researcher and Lecturer (2004–2005) [2] , election as an IEEE Senior Member (2003) [3] , and selection as a NASA/ASEE Summer Faculty Research Fellow at the Jet Propulsion Laboratory (1998) [2] .

References

  1. 1 2 "Official page of Joseph Bernstein on Ariel University website". www.ariel.ac.il. Retrieved 2025-09-13.
  2. 1 2 3 4 5 6 7 8 9 10 11 "Officially published CV of Joseph Bernstein". www.ariel.ac.il. Retrieved 2025-09-13.
  3. 1 2 3 "IEEE Author profile of Joseph Bernstein". ieeexplore.ieee.org. Retrieved 2025-09-13.
  4. ↑ Suehle, John S.; Vogel, Eric M.; Roitman, Peter; Conley, John F., Jr.; Johnston, Allan H.; Wang, Bin; Bernstein, Joseph B.; Weintraub, C. E. (2002-02-18). "Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation". Applied Physics Letters. 80 (7): 1282–1284. Bibcode:2002ApPhL..80.1282S. doi:10.1063/1.1448859. ISSN   0003-6951.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  5. ↑ Wang, Bin; Suehle, J.S.; Vogel, E.M.; Bernstein, J.B. (May 2001). "Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress". IEEE Electron Device Letters. 22 (5): 224–226. doi:10.1109/55.919236. ISSN   1558-0563.
  6. ↑ Bernstein, Joseph B.; Gabbay, Moti; Delly, Ofir (2014-12-01). "Reliability matrix solution to multiple mechanism prediction". Microelectronics Reliability. 54 (12): 2951–2955. Bibcode:2014MiRe...54.2951B. doi:10.1016/j.microrel.2014.07.115. ISSN   0026-2714.
  7. ↑ Heh, Dawei; Young, Chadwin D.; Brown, George A.; Hung, P. Y.; Diebold, Alain; Bersuker, Gennadi; Vogel, Eric M.; Bernstein, Joseph B. (2006-04-13). "Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks". Applied Physics Letters. 88 (15): 152907. doi:10.1063/1.2195896. ISSN   0003-6951.
  8. ↑ Suehle, J.S.; Vogel, E.M.; Bin Wang; Bernstein, J.B. (2000). "Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO/Sub 2/ Films". 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059). IEEE. pp. 33–39. doi:10.1109/RELPHY.2000.843888. ISBN   978-0-7803-5860-7.
  9. ↑ "VLSI program at Ariel University". www.ariel.ac.il. Retrieved 2025-09-13.
  10. ↑ "Masters Thesis". mit.primo.exlibrisgroup.com. Retrieved 2025-09-13.
  11. ↑ "Ph.D. Thesis". mit.primo.exlibrisgroup.com. Retrieved 2025-09-13.
  12. ↑ "Bernstein", Wikipedia, 2025-09-05, retrieved 2025-09-13
  13. ↑ "Reliability Engineering Program Joins ME Department". me.umd.edu. Retrieved 2025-09-13.
  14. ↑ Qin, Jin (2007-08-27). "A New Physics-of-Failure Based VLSI Circuits Reliability Simulation and Prediction Methodology". Annual International Symposium on Reliability Physics. hdl:1903/7410.
  15. ↑ "ALUMNI | Fulbright". www.fulbright.org.il. Retrieved 2025-09-13.
  16. ↑ "Prof. Joseph Bernstein | Faculty of Engineering" . Retrieved 2025-09-13.
  17. ↑ "Google Scholar". scholar.google.co.il. Retrieved 2025-09-13.
  18. ↑ Gurfinkel, Moshe; Xiong, Hao D.; Cheung, Kin P.; Suehle, John S.; Bernstein, Joseph B.; Shapira, Yoram; Lelis, Aivars J.; Habersat, Daniel; Goldsman, Neil (August 2008). "Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques". IEEE Transactions on Electron Devices. 55 (8): 2004–2012. doi:10.1109/TED.2008.926626. ISSN   0018-9383.
  19. ↑ Bernstein, J. B.; Bender, E.; Bensoussan, A. (March 2023). "The Correct Hot Carrier Degradation Model". 2023 IEEE International Reliability Physics Symposium (IRPS). IEEE. pp. 1–5. doi:10.1109/IRPS48203.2023.10117881. ISBN   978-1-6654-5672-2.
  20. ↑ Vogel, E.M.; Suehle, J.S.; Edelstein, M.D.; Wang, B.; Chen, Y.; Bernstein, J.B. (June 2000). "Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress". IEEE Transactions on Electron Devices. 47 (6): 1183–1191. Bibcode:2000ITED...47.1183V. doi:10.1109/16.842960.
  21. ↑ Wei Zhang; Bernstein, J.B. (1999). "Electromigration simulation under DC/AC stresses considering microstructure". Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247). IEEE. pp. 41–43. doi:10.1109/IITC.1999.787072. ISBN   978-0-7803-5174-5.
  22. ↑ White, Mark; Qin, Jin; Bernstein, Joseph B. (January 2011). "A study of scaling effects on DRAM reliability". 2011 Proceedings - Annual Reliability and Maintainability Symposium. Lake Buena Vista, FL, USA: IEEE. pp. 1–6. doi:10.1109/rams.2011.5754522. ISBN   978-1-4244-8857-5.
  23. ↑ "GaN Meets SiC for Megahertz-Class High-Voltage Power (Podcast)". KASPA. Retrieved 2025-09-13.
  24. ↑ Avraham, Tsuriel; Dhyani, Mamta; Bernstein, Joseph B. (2025-02-21). "Reliability Challenges, Models, and Physics of Silicon Carbide and Gallium Nitride Power Devices". Energies. 18 (5): 1046. doi: 10.3390/en18051046 . ISSN   1996-1073.
  25. ↑ Liron, Cohen; B., Bernstein, Joseph; Ilan, Aharon (January 2025). "Gate Driver for High-Frequency Power Converter". Electronics. 14 (2). doi: 10.3390/electronic (inactive 13 September 2025). ISSN   2079-9292. Archived from the original on 2025-01-11.{{cite journal}}: CS1 maint: DOI inactive as of September 2025 (link) CS1 maint: multiple names: authors list (link)
  26. ↑ Li, Xiaojun; Qin, Jin; Bernstein, Joseph B. (March 2008). "Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation". IEEE Transactions on Device and Materials Reliability. 8 (1): 98–121. Bibcode:2008ITDMR...8...98L. doi:10.1109/TDMR.2008.915629. ISSN   1530-4388.
  27. ↑ Bernstein, Joseph B.; Gurfinkel, Moshe; Li, Xiaojun; Walters, Jörg; Shapira, Yoram; Talmor, Michael (December 2006). "Electronic circuit reliability modeling". Microelectronics Reliability. 46 (12): 1957–1979. Bibcode:2006MiRe...46.1957B. doi:10.1016/j.microrel.2005.12.004.
  28. ↑ White, M.; Cooper, M.; Chen, Y.; Bernstein, J. (October 2003). "Impact of junction temperature on microelectronic device reliability and considerations for space applications". IEEE International Integrated Reliability Workshop Final Report, 2003. pp. 133–136. doi:10.1109/IRWS.2003.1283320. ISBN   0-7803-8157-2.
  29. ↑ Shen, Yu-Lin; Suresh, S.; Bernstein, J.B. (March 1996). "Laser linking of metal interconnects: analysis and design considerations". IEEE Transactions on Electron Devices. 43 (3): 402–410. Bibcode:1996ITED...43..402S. doi:10.1109/16.485653. ISSN   1557-9646.
  30. ↑ Rasera, R.L.; Bernstein, J.B. (1996). "Laser linking of metal interconnect: linking dynamics and failure analysis". IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. 19 (4): 554–561. Bibcode:1996ITCPA..19..554R. doi:10.1109/95.554937.
  31. ↑ US6191486B1,Bernstein, Joseph B.,"Technique for producing interconnecting conductive links",issued 2001-02-20
  32. ↑ US5585602A,Bernstein, Joseph B.,"Structure for providing conductive paths",issued 1996-12-17
  33. ↑ US5861325A,Bernstein, Joseph B.,"Technique for producing interconnecting conductive links",issued 1999-01-19
  34. ↑ US6057221A,Bernstein, Joseph B.&Duan, Zhihui,"Laser-induced cutting of metal interconnect",issued 2000-05-02
  35. ↑ US20150039244A1,Bernstein, Joseph,"Failure Rate Estimation From Multiple Failure Mechanisms",issued 2015-02-05
  36. ↑ US10746781B2,Bernstein, Joseph B.,"Ring oscillator test circuit",issued 2020-08-18
  37. ↑ US20140052392A1,BERNSTEIN, Joseph Barry&Gershman, Israel,"Technique for monitoring structural health of a solder joint in no-leads packages",issued 2014-02-20
  38. ↑ US12143110B2,Bernstein, Joseph B.&Aharon, Ilan,"Control circuit for ring oscillator-based power controller",issued 2024-11-12
  39. ↑ "The Korean Electronics Industry". Routledge & CRC Press. Retrieved 2025-09-13.
  40. ↑ "Physics-of-Failure Based Handbook of Microelectronic Systems". Quanterion Solutions Incorporated. Retrieved 2025-09-13.
  41. ↑ Reliability Prediction from Burn-In Data Fit to Reliability Models. 2014-03-10. ISBN   978-0-12-800747-1.
  42. ↑ "Reliability Prediction for Microelectronics | Wiley". Wiley.com. Retrieved 2025-09-13.
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