Lan Wang

Last updated

Lan Wang
NationalityAustralian
Alma mater Zhejiang University
National University of Singapore
University of Minnesota
Scientific career
FieldsMaterial Science
Institutions RMIT University

Professor Lan Wang is a Chinese-Australian material scientist known for expertise in materials synthesis and advanced materials characterisation.

Contents

He was appointed as an associate professor of physics at RMIT University in Melbourne, Australia in 2014. [1]

Career

Wang has a Bachelor of Science in Physics (1993) and Master of Science in theoretical physics (1997) from Zhejiang University, China, a PhD in Physics from the National University of Singapore, Singapore (2001) and a PhD in Materials Sciences from the University of Minnesota, USA (2006).

He has held professional positions at XinDa Communication Solution Inc, China; Rush Presbyterian St Luke’s Medical Center, Chicago, USA; University of Minnesota, USA; and Nanyang Technological University, Singapore. [1]

From 2014 he has been Associate Professor, School of Applied Science, RMIT University.

Wang is a Theme Leader and node leader at ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) [2] where he leads the Centre's nano-device fabrication research theme, as well as studying high-temperature quantum anomalous Hall systems in topological materials.

Past and current collaborations include the National University of Singapore (NUS), Hong Kong University (HKU), University of Southampton, and the China High Magnetic Field Lab at Chinese Academy of Science.

Expertise

Wang's research has focused on topological condensed matter systems, spintronics, and magnetic materials. His team at RMIT grows single crystals, thin films and nanostructures, fabricating devices for electron and spin transport measurements for new generation spintronic devices.

For material growth and characterization, Wang is experienced with ultra high vacuum (UHV) systems and thin-film deposition, single-crystal growth, and nanostructure growth. For device fabrication he is experienced in E-beam and photo lithography. For characterising electric and magnetic properties of materials, he is experienced in standard magnetic measurements, measurements and analysis of the quantum oscillations of single crystalline systems in high magnetic field and low temperature, point-contact spectroscopy, gate-tuned electric transport in nano-devices, and measurements of magneto-electrical coupling effect.

Publications

Wang has published over 100 papers with total citations over 2500, and an H-index of 26 [3]

Selected publications

Qualifications and international journal roles

Related Research Articles

<span class="mw-page-title-main">Ferromagnetism</span> Mechanism by which materials form into and are attracted to magnets

Ferromagnetism is a property of certain materials that results in a significant, observable magnetic permeability, and in many cases, a significant magnetic coercivity, allowing the material to form a permanent magnet. Ferromagnetic materials are noticeably attracted to a magnet, which is a consequence of their substantial magnetic permeability.

Spintronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.

<span class="mw-page-title-main">Giant magnetoresistance</span> Phenomenom involving the change of conductivity in metallic layers

Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR, which also sets the foundation for the study of spintronics.

Magnetic semiconductors are semiconductor materials that exhibit both ferromagnetism and useful semiconductor properties. If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of charge carriers, practical magnetic semiconductors would also allow control of quantum spin state. This would theoretically provide near-total spin polarization, which is an important property for spintronics applications, e.g. spin transistors.

<span class="mw-page-title-main">Albert Fert</span> French physicist (born 1938)

Albert Fert is a French physicist and one of the discoverers of giant magnetoresistance which brought about a breakthrough in gigabyte hard disks. Currently, he is an emeritus professor at Paris-Saclay University in Orsay, scientific director of a joint laboratory between the Centre national de la recherche scientifique and Thales Group, and adjunct professor at Michigan State University. He was awarded the 2007 Nobel Prize in Physics together with Peter Grünberg.

Spin pumping is the dynamical generation of pure spin current by the coherent precession of magnetic moments, which can efficiently inject spin from a magnetic material into an adjacent non-magnetic material. The non-magnetic material usually hosts the spin Hall effect that can convert the injected spin current into a charge voltage easy to detect. A spin pumping experiment typically requires electromagnetic irradiation to induce magnetic resonance, which converts energy and angular momenta from electromagnetic waves to magnetic dynamics and then to electrons, enabling the electronic detection of electromagnetic waves. The device operation of spin pumping can be regarded as the spintronic analog of a battery.

Gallium manganese arsenide, chemical formula (Ga,Mn)As is a magnetic semiconductor. It is based on the world's second most commonly used semiconductor, gallium arsenide,, and readily compatible with existing semiconductor technologies. Differently from other dilute magnetic semiconductors, such as the majority of those based on II-VI semiconductors, it is not paramagnetic but ferromagnetic, and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In (Ga,Mn)As, the manganese atoms provide a magnetic moment, and each also acts as an acceptor, making it a p-type material. The presence of carriers allows the material to be used for spin-polarized currents. In contrast, many other ferromagnetic magnetic semiconductors are strongly insulating and so do not possess free carriers. (Ga,Mn)As is therefore a candidate material for spintronic devices but it is likely to remain only a testbed for basic research as its Curie temperature could only be raised up to approximately 200 K.

<span class="mw-page-title-main">Topological insulator</span> State of matter with insulating bulk but conductive boundary

A topological insulator is a material whose interior behaves as an electrical insulator while its surface behaves as an electrical conductor, meaning that electrons can only move along the surface of the material.

In condensed matter physics, a quantum spin liquid is a phase of matter that can be formed by interacting quantum spins in certain magnetic materials. Quantum spin liquids (QSL) are generally characterized by their long-range quantum entanglement, fractionalized excitations, and absence of ordinary magnetic order.

Spin engineering describes the control and manipulation of quantum spin systems to develop devices and materials. This includes the use of the spin degrees of freedom as a probe for spin based phenomena. Because of the basic importance of quantum spin for physical and chemical processes, spin engineering is relevant for a wide range of scientific and technological applications. Current examples range from Bose–Einstein condensation to spin-based data storage and reading in state-of-the-art hard disk drives, as well as from powerful analytical tools like nuclear magnetic resonance spectroscopy and electron paramagnetic resonance spectroscopy to the development of magnetic molecules as qubits and magnetic nanoparticles. In addition, spin engineering exploits the functionality of spin to design materials with novel properties as well as to provide a better understanding and advanced applications of conventional material systems. Many chemical reactions are devised to create bulk materials or single molecules with well defined spin properties, such as a single-molecule magnet. The aim of this article is to provide an outline of fields of research and development where the focus is on the properties and applications of quantum spin.

Bismuth selenide is a gray compound of bismuth and selenium also known as bismuth(III) selenide.

<span class="mw-page-title-main">Shoucheng Zhang</span> Chinese-American physicist (1963–2018)

Shoucheng Zhang was a Chinese-American physicist who was the JG Jackson and CJ Wood professor of physics at Stanford University. He was a condensed matter theorist known for his work on topological insulators, the quantum Hall effect, the quantum spin Hall effect, spintronics, and high-temperature superconductivity. According to the National Academy of Sciences:

He discovered a new state of matter called topological insulator in which electrons can conduct along the edge without dissipation, enabling a new generation of electronic devices with much lower power consumption. For this ground breaking work he received numerous international awards, including the Buckley Prize, the Dirac Medal and Prize, the Europhysics Prize, the Physics Frontiers Prize and the Benjamin Franklin Medal.

<span class="mw-page-title-main">Spin gapless semiconductor</span>

Spin gapless semiconductors are a novel class of materials with unique electrical band structure for different spin channels in such a way that there is no band gap for one spin channel while there is a finite gap in another spin channel.

<span class="mw-page-title-main">ARC Centre of Excellence in Future Low-Energy Electronics Technologies</span>

The ARC Centre of Excellence in Future Low-Energy Electronics Technologies is a collaboration of physicists, electrical engineers, chemists and material scientists from seven Australian universities developing ultra-low energy electronics aimed at reducing energy use in information technology (IT). The Centre was funded in the 2017 ARC funding round.

Spin Hall magnetoresistance (SMR) is a transport phenomenon that is found in some electrical conductors that have at least one surface in direct contact with another magnetic material due to changes in the spin current that are present in metals and semiconductors with a large spin Hall angle. It is most easily detected when the magnetic material is an insulator which eliminates other magnetically sensitive transport effects arising from conduction in the magnetic material.

<span class="mw-page-title-main">Spinterface</span>

Spinterface is a term coined to indicate an interface between a ferromagnet and an organic semiconductor. This is a widely investigated topic in molecular spintronics, since the role of interfaces plays a huge part in the functioning of a device. In particular, spinterfaces are widely studied in the scientific community because of their hybrid organic/inorganic composition. In fact, the hybridization between the metal and the organic material can be controlled by acting on the molecules, which are more responsive to electrical and optical stimuli than metals. This gives rise to the possibility of efficiently tuning the magnetic properties of the interface at the atomic scale.

Xiaolin Wang is a Chinese-Australian scientist studyying advanced materials synthesis and characterisation and spintronics. He is a University of Wollongong professor, and director of its Institute for Superconducting and Electronic Materials, and an Australian Research Council future fellow.

<span class="mw-page-title-main">Anatolie Sidorenko</span>

Anatolie S. Sidorenko is a doctor of physical and mathematical sciences and professor at the Technical University of Moldova. He specializes in condensed matter physics with the focus on electronic transport and magnetic properties of low dimensional systems – thin films and layered superconductors, design of superconducting devices and sensors. He made key contributions to investigation of novel superconducting materials and hybrid structures superconductor-ferromagnet, multiband and triplet superconductivity.

<span class="mw-page-title-main">Magnetic skyrmionium</span>

In magnetic systems, excitations can be found that are characterized by the orientation of the local magnetic moments of atomic cores. A magnetic skyrmionium is a ring-shaped topological spin texture and is closely related to the magnetic skyrmion.

Jacek K. Furdyna is a Polish American physicist and academic. He is a Professor Emeritus at the University of Notre Dame.

References

  1. 1 2 "Associate Professor Lan Wang - RMIT University". www.rmit.edu.au. Retrieved 30 July 2018.
  2. "FLEET Team - ARC Centre of Excellence in Future Low-Energy Electronics Technologies". www.fleet.org.au. Retrieved 30 July 2018.
  3. "Scopus preview - Scopus - Author details (Wang, Lan)". www.scopus.com. Retrieved 30 July 2018.
  4. Tan, Cheng; Lee, Jinhwan; Jung, Soon-Gil; Park, Tuson; Albarakati, Sultan; Partridge, James; Field, Matthew R.; McCulloch, Dougal G.; Wang, Lan; Lee, Changgu (19 April 2018). "Hard magnetic properties in nanoflake van der Waals Fe3GeTe2". Nature Communications. 9 (1): 1554. doi:10.1038/s41467-018-04018-w. PMC   5908800 . PMID   29674662.
  5. Sulaev, Azat; Zeng, Minggang; Shen, Shun-Qing; Cho, Soon Khuen; Zhu, Wei Guang; Feng, Yuan Ping; Eremeev, Sergey V.; Kawazoe, Yoshiyuki; Shen, Lei; Wang, Lan (11 February 2015). "Electrically Tunable In-Plane Anisotropic Magnetoresistance in Topological Insulator BiSbTeSe2 Nanodevices". Nano Letters. 15 (3): 2061–2066. Bibcode:2015NanoL..15.2061S. doi:10.1021/nl504956s. PMID   25665017.
  6. Wang, B. M.; Liu, Y.; Ren, P.; Xia, B.; Ruan, K. B.; Yi, J. B.; Ding, J.; Li, X. G.; Wang, L. (17 February 2011). "Large Exchange Bias after Zero-Field Cooling from an Unmagnetized State". Physical Review Letters. 106 (7): 077203. arXiv: 1101.4737 . Bibcode:2011PhRvL.106g7203W. doi:10.1103/PhysRevLett.106.077203. PMID   21405539. S2CID   36603253.
  7. Yi, J. B.; Lim, C. C.; Xing, G. Z.; Fan, H. M.; Van, L. H.; Huang, S. L.; Yang, K. S.; Huang, X. L.; Qin, X. B.; Wang, B. Y.; Wu, T.; Wang, L.; Zhang, H. T.; Gao, X. Y.; Liu, T.; Wee, A. T. S.; Feng, Y. P.; Ding, J. (2 April 2010). "Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO". Physical Review Letters. 104 (13): 137201. Bibcode:2010PhRvL.104m7201Y. doi:10.1103/PhysRevLett.104.137201. PMID   20481907. S2CID   8480768.
  8. Wang, Yang; Sui, Yu; Ren, Peng; Wang, Lan; Wang, Xianjie; Su, Wenhui; Fan, Hongjin (9 February 2010). "Strongly Correlated Properties and Enhanced Thermoelectric Response in Ca3Co4−xMxO9(M = Fe, Mn, and Cu)†". Chemistry of Materials. 22 (3): 1155–1163. doi:10.1021/cm902483a.
  9. Yi, J. B.; Pan, H.; Lin, J. Y.; Ding, J.; Feng, Y. P.; Thongmee, S.; Liu, T.; Gong, H.; Wang, L. (18 March 2008). "Ferromagnetism in ZnO Nanowires Derived from Electro-deposition on AAO Template and Subsequent Oxidation". Advanced Materials. 20 (6): 1170–1174. Bibcode:2008AdM....20.1170Y. doi:10.1002/adma.200702387. S2CID   96947036.