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Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy can cause nuclear transmutation.
The neutron is a subatomic particle, symbol
n
or
n0
, which has a neutral charge, and a mass slightly greater than that of a proton. Protons and neutrons constitute the nuclei of atoms. Since protons and neutrons behave similarly within the nucleus, and each has a mass of approximately one atomic mass unit, they are both referred to as nucleons. Their properties and interactions are described by nuclear physics.
Neutron activation analysis (NAA) is the nuclear process used for determining the concentrations of elements in a vast amount of materials. NAA allows discrete sampling of elements as it disregards the chemical form of a sample, and focuses solely on its nucleus. The method is based on neutron activation and therefore requires a source of neutrons. The sample is bombarded with neutrons, causing the elements to form radioactive isotopes. The radioactive emissions and radioactive decay paths for each element are well known. Using this information, it is possible to study spectra of the emissions of the radioactive sample, and determine the concentrations of the elements within it. A particular advantage of this technique is that it does not destroy the sample, and thus has been used for analysis of works of art and historical artifacts. NAA can also be used to determine the activity of a radioactive sample.
A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions and electron holes, at these junctions is the basis of diodes, transistors and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.
In physics, sputtering is a phenomenon in which microscopic particles of a solid material are ejected from its surface, after the material is itself bombarded by energetic particles of a plasma or gas. It occurs naturally in outer space, and can be an unwelcome source of wear in precision components. However, the fact that it can be made to act on extremely fine layers of material is utilised in science and industry—there, it is used to perform precise etching, carry out analytical techniques, and deposit thin film layers in the manufacture of optical coatings, semiconductor devices and nanotechnology products. It is a physical vapor deposition technique.
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors, metals, salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski, who invented the method in 1915 while investigating the crystallization rates of metals. He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal.
Neutron radiation is a form of ionizing radiation that presents as free neutrons. Typical phenomena are nuclear fission or nuclear fusion causing the release of free neutrons, which then react with nuclei of other atoms to form new isotopes—which, in turn, may trigger further neutron radiation. Free neutrons are unstable, decaying into a proton, an electron, plus an electron antineutrino with a mean lifetime of 887 seconds.
Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.
A scintillator is a material that exhibits scintillation, the property of luminescence, when excited by ionizing radiation. Luminescent materials, when struck by an incoming particle, absorb its energy and scintillate. Sometimes, the excited state is metastable, so the relaxation back down from the excited state to lower states is delayed. The process then corresponds to one of two phenomena: delayed fluorescence or phosphorescence. The correspondence depends on the type of transition and hence the wavelength of the emitted optical photon.
A semiconductor detector in ionizing radiation detection physics is a device that uses a semiconductor to measure the effect of incident charged particles or photons.
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor.
In electronics and computing, a soft error is a type of error where a signal or datum is wrong. Errors may be caused by a defect, usually understood either to be a mistake in design or construction, or a broken component. A soft error is also a signal or datum which is wrong, but is not assumed to imply such a mistake or breakage. After observing a soft error, there is no implication that the system is any less reliable than before. One cause of soft errors is single event upsets from cosmic rays.
Spallation is a process in which fragments of material (spall) are ejected from a body due to impact or stress. In the context of impact mechanics it describes ejection of material from a target during impact by a projectile. In planetary physics, spallation describes meteoritic impacts on a planetary surface and the effects of stellar winds and cosmic rays on planetary atmospheres and surfaces. In the context of mining or geology, spallation can refer to pieces of rock breaking off a rock face due to the internal stresses in the rock; it commonly occurs on mine shaft walls. In the context of anthropology, spallation is a process used to make stone tools such as arrowheads by knapping. In nuclear physics, spallation is the process in which a heavy nucleus emits numerous nucleons as a result of being hit by a high-energy particle, thus greatly reducing its atomic weight. In industrial processes and bioprocessing the loss of tubing material due to the repeated flexing of the tubing within a peristaltic pump is termed spallation.
Elastic recoil detection analysis (ERDA), also referred to as forward recoil scattering, is an ion beam analysis technique in materials science to obtain elemental concentration depth profiles in thin films. This technique is known by several different names. These names are listed below. In the technique of ERDA, an energetic ion beam is directed at a sample to be characterized and there is an elastic nuclear interaction between the ions of beam and the atoms of the target sample. Such interactions are commonly of Coulomb nature. Depending on the kinetics of the ions, cross section area, and the loss of energy of the ions in the matter, ERDA helps determine the quantification of the elemental analysis. It also provides information about the depth profile of the sample.
Muon spin spectroscopy also known as µSR is an experimental technique based on the implantation of spin-polarized muons in matter and on the detection of the influence of the atomic, molecular or crystalline surroundings on their spin motion. The motion of the muon spin is due to the magnetic field experienced by the particle and may provide information on its local environment in a very similar way to other magnetic resonance techniques, such as electron spin resonance and, more closely, nuclear magnetic resonance (NMR).
Neutron detection is the effective detection of neutrons entering a well-positioned detector. There are two key aspects to effective neutron detection: hardware and software. Detection hardware refers to the kind of neutron detector used and to the electronics used in the detection setup. Further, the hardware setup also defines key experimental parameters, such as source-detector distance, solid angle and detector shielding. Detection software consists of analysis tools that perform tasks such as graphical analysis to measure the number and energies of neutrons striking the detector.
In nuclear and materials physics, stopping power is the retarding force acting on charged particles, typically alpha and beta particles, due to interaction with matter, resulting in loss of particle energy. Its application is important in areas such as radiation protection, ion implantation and nuclear medicine.
Rutherford backscattering spectrometry (RBS) is an analytical technique used in materials science. Sometimes referred to as high-energy ion scattering (HEIS) spectrometry, RBS is used to determine the structure and composition of materials by measuring the backscattering of a beam of high energy ions impinging on a sample.
Stopping and Range of Ions in Matter (SRIM) is a group of computer programs which calculate interaction of ions with matter; the core of SRIM is a program Transport of ions in matter (TRIM). SRIM is popular in the ion implantation research and technology community and also used widely in other branches of radiation material science.
In nuclear fusion power research, the plasma-facing material (PFM) is any material used to construct the plasma-facing components (PFC), those components exposed to the plasma within which nuclear fusion occurs, and particularly the material used for the lining the first wall or divertor region of the reactor vessel.
References
- Ziegler, J. F.; Cole, G. W.; Baglin, J. E. E. (1972). "Technique for determining concentration profiles of boron impurities in substrates". Journal of Applied Physics. AIP Publishing. 43 (9): 3809–3815. doi:10.1063/1.1661816. ISSN 0021-8979.
- D. Fink, J.P. Biersack and H. Liebl, in Ion Implantation: Equipment and Techniques, (1983), H. Ryssel and H. Glawischnig, eds., Springer-Verlag, Berlin, pp. 318–326.
- Downing, R.G.; Fleming, R.F.; Langland, J.K.; Vincent, D.H. (1983). "Neutron depth profiling at the National Bureau of Standards". Nuclear Instruments and Methods in Physics Research. Elsevier BV. 218 (1–3): 47–51. doi:10.1016/0167-5087(83)90953-5. ISSN 0167-5087.