The piezoelectric coefficient or piezoelectric modulus, usually written d33, quantifies the volume change when a piezoelectric material is subject to an electric field, or the polarization on the application of stress. In general, piezoelectricity is described by a tensor of coefficients ; see Piezoelectricity § Mechanism for further details.
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Piezoelectricity is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied mechanical stress. The word piezoelectricity means electricity resulting from pressure and latent heat. It is derived from Ancient Greek πιέζω (piézō) 'to squeeze or press', and ἤλεκτρον (ḗlektron) 'amber'. The German form of the word (Piezoelektricität) was coined in 1881 by the German physicist Wilhelm Gottlieb Hankel; the English word was coined in 1883.
Ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. All ferroelectrics are also piezoelectric and pyroelectric, with the additional property that their natural electrical polarization is reversible. The term is used in analogy to ferromagnetism, in which a material exhibits a permanent magnetic moment. Ferromagnetism was already known when ferroelectricity was discovered in 1920 in Rochelle salt by Joseph Valasek. Thus, the prefix ferro, meaning iron, was used to describe the property despite the fact that most ferroelectric materials do not contain iron. Materials that are both ferroelectric and ferromagnetic are known as multiferroics.
Pyroelectricity is a property of certain crystals which are naturally electrically polarized and as a result contain large electric fields. Pyroelectricity can be described as the ability of certain materials to generate a temporary voltage when they are heated or cooled. The change in temperature modifies the positions of the atoms slightly within the crystal structure, so that the polarization of the material changes. This polarization change gives rise to a voltage across the crystal. If the temperature stays constant at its new value, the pyroelectric voltage gradually disappears due to leakage current. The leakage can be due to electrons moving through the crystal, ions moving through the air, or current leaking through a voltmeter attached across the crystal.
Polyvinylidene fluoride or polyvinylidene difluoride (PVDF) is a highly non-reactive thermoplastic fluoropolymer produced by the polymerization of vinylidene difluoride. Its chemical formula is (C2H2F2)n.
In electromagnetism, electrostriction is a property of all electrical non-conductors, or dielectrics, that causes them to change their shape under the application of an electric field. It is the dual property to magnetostriction.
Energy harvesting (EH) – also known as power harvesting,energy scavenging, or ambient power – is the process by which energy is derived from external sources, then stored for use by small, wireless autonomous devices, like those used in wearable electronics, condition monitoring, and wireless sensor networks.
Barium titanate (BTO) is an inorganic compound with chemical formula BaTiO3. Barium titanate appears white as a powder and is transparent when prepared as large crystals. It is a ferroelectric, pyroelectric, and piezoelectric ceramic material that exhibits the photorefractive effect. It is used in capacitors, electromechanical transducers and nonlinear optics.
A piezoelectric sensor is a device that uses the piezoelectric effect to measure changes in pressure, acceleration, temperature, strain, or force by converting them to an electrical charge. The prefix piezo- is Greek for 'press' or 'squeeze'.
The piezoresistive effect is a change in the electrical resistivity of a semiconductor or metal when mechanical strain is applied. In contrast to the piezoelectric effect, the piezoresistive effect causes a change only in electrical resistance, not in electric potential.
The electromechanical coupling coefficient is a numerical measure of the conversion efficiency between electrical and acoustic energy in piezoelectric materials.
Gallium phosphate (GaPO4 or gallium orthophosphate) is a colorless trigonal crystal with a hardness of 5.5 on the Mohs scale. GaPO4 is isotypic with quartz, possessing very similar properties, but the silicon atoms are alternately substituted with gallium and phosphorus, thereby doubling the piezoelectric effect. GaPO4 has many advantages over quartz for technical applications, like a higher electromechanical coupling coefficient in resonators, due to this doubling. Contrary to quartz, GaPO4 is not found in nature. Therefore, a hydrothermal process must be used to synthesize the crystal.
Flexoelectricity is a property of a dielectric material where there is coupling between electrical polarization and a strain gradient. Flexoelectricity is closely related to piezoelectricity, but while piezoelectricity refers to polarization due to uniform strain, flexoelectricity refers specifically to polarization due to strain that changes from point to point in the material. This nonuniform strain breaks centrosymmetry, meaning that unlike in piezoelectricity, flexoelectric effects occur in both centrosymmetric and asymmetric crystal structures. Flexoelectricity is not the same as Ferroelasticity.
A mechanical filter is a signal processing filter usually used in place of an electronic filter at radio frequencies. Its purpose is the same as that of a normal electronic filter: to pass a range of signal frequencies, but to block others. The filter acts on mechanical vibrations which are the analogue of the electrical signal. At the input and output of the filter, transducers convert the electrical signal into, and then back from, these mechanical vibrations.
Piezoresponse force microscopy (PFM) is a variant of atomic force microscopy (AFM) that allows imaging and manipulation of piezoelectric/ferroelectric materials domains. This is achieved by bringing a sharp conductive probe into contact with a ferroelectric surface and applying an alternating current (AC) bias to the probe tip in order to excite deformation of the sample through the converse piezoelectric effect (CPE). The resulting deflection of the probe cantilever is detected through standard split photodiode detector methods and then demodulated by use of a lock-in amplifier (LiA). In this way topography and ferroelectric domains can be imaged simultaneously with high resolution.
In microscopy, scanning joule expansion microscopy (SJEM) is a form of scanning probe microscopy heavily based on atomic force microscopy (AFM) that maps the temperature distribution along a surface. Resolutions down to 10 nm have been achieved and 1 nm resolution is theoretically possible. Thermal measurements at the nanometer scale are of both academic and industrial interest, particularly in regards to nanomaterials and modern integrated circuits.
Gordon Eugene Martin is an American physicist and author in the field of piezoelectric materials for underwater sound transducers. He wrote early computer software automating iterative evaluation of direct computer models through a Jacobian matrix of complex numbers. His software enabled the Navy Electronics Laboratory (NEL) to accelerate design of sonar arrays for tracking Soviet Navy submarines during the Cold War.
Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order piezoelectric coefficients times products of the strain tensor components. The idea was put forward experimentally for zincblende CdTe heterostructures in 1992, It was confirmed in 1996 by the application of a hydrostatic pressure to the same heterostructures, and found to agree with the results of an ab initio approach, but also to a simple calculation using what is currently known as the Harrisson’s Model. The idea was then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients. On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms. Indirect experimental evidence of the existence of these effects has been also reported in the literature in relation to GaN and InN semiconductor optoelectronic devices.
A piezoelectric microelectromechanical system (piezoMEMS) is a miniature or microscopic device that uses piezoelectricity to generate motion and carry out its tasks. It is a microelectromechanical system that takes advantage of an electrical potential that appears under mechanical stress. PiezoMEMS can be found in a variety of applications, such as switches, inkjet printer heads, sensors, micropumps, and energy harvesters.
