Related Research Articles
The neutron is a subatomic particle, symbol
n
or
n0
, which has a neutral charge, and a mass slightly greater than that of a proton. Protons and neutrons constitute the nuclei of atoms. Since protons and neutrons behave similarly within the nucleus, and each has a mass of approximately one dalton, they are both referred to as nucleons. Their properties and interactions are described by nuclear physics. Protons and neutrons are not elementary particles; each is composed of three quarks.
A photoresist is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronics industry.
Ionizing radiation, including nuclear radiation, consists of subatomic particles or electromagnetic waves that have sufficient energy to ionize atoms or molecules by detaching electrons from them. Some particles can travel up to 99% of the speed of light, and the electromagnetic waves are on the high-energy portion of the electromagnetic spectrum.
The Selectron was an early form of digital computer memory developed by Jan A. Rajchman and his group at the Radio Corporation of America (RCA) under the direction of Vladimir K. Zworykin. It was a vacuum tube that stored digital data as electrostatic charges using technology similar to the Williams tube storage device. The team was never able to produce a commercially viable form of Selectron before magnetic-core memory became almost universal.
A linear particle accelerator is a type of particle accelerator that accelerates charged subatomic particles or ions to a high speed by subjecting them to a series of oscillating electric potentials along a linear beamline. The principles for such machines were proposed by Gustav Ising in 1924, while the first machine that worked was constructed by Rolf Widerøe in 1928 at the RWTH Aachen University. Linacs have many applications: they generate X-rays and high energy electrons for medicinal purposes in radiation therapy, serve as particle injectors for higher-energy accelerators, and are used directly to achieve the highest kinetic energy for light particles for particle physics.
Particle-induced X-ray emission or proton-induced X-ray emission (PIXE) is a technique used for determining the elemental composition of a material or a sample. When a material is exposed to an ion beam, atomic interactions occur that give off EM radiation of wavelengths in the x-ray part of the electromagnetic spectrum specific to an element. PIXE is a powerful yet non-destructive elemental analysis technique now used routinely by geologists, archaeologists, art conservators and others to help answer questions of provenance, dating and authenticity.
Gargamelle was a heavy liquid bubble chamber detector in operation at CERN between 1970 and 1979. It was designed to detect neutrinos and antineutrinos, which were produced with a beam from the Proton Synchrotron (PS) between 1970 and 1976, before the detector was moved to the Super Proton Synchrotron (SPS). In 1979 an irreparable crack was discovered in the bubble chamber, and the detector was decommissioned. It is currently part of the "Microcosm" exhibition at CERN, open to the public.
Electron-beam lithography is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
Masklesslithography (MPL) is a photomask-less photolithography-like technology used to project or focal-spot write the image pattern onto a chemical resist-coated substrate by means of UV radiation or electron beam.
Nanolithography (NL) is a growing field of techniques within nanotechnology dealing with the engineering of nanometer-scale structures on various materials.
In semiconductor fabrication, a resist is a thin layer used to transfer a circuit pattern to the semiconductor substrate which it is deposited upon. A resist can be patterned via lithography to form a (sub)micrometer-scale, temporary mask that protects selected areas of the underlying substrate during subsequent processing steps. The material used to prepare said thin layer is typically a viscous solution. Resists are generally proprietary mixtures of a polymer or its precursor and other small molecules that have been specially formulated for a given lithography technology. Resists used during photolithography are called photoresists.
Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM). However, while the SEM uses a focused beam of electrons to image the sample in the chamber, a FIB setup uses a focused beam of ions instead. FIB can also be incorporated in a system with both electron and ion beam columns, allowing the same feature to be investigated using either of the beams. FIB should not be confused with using a beam of focused ions for direct write lithography. These are generally quite different systems where the material is modified by other mechanisms.
Extreme ultraviolet radiation or high-energy ultraviolet radiation is electromagnetic radiation in the part of the electromagnetic spectrum spanning wavelengths shorter that the hydrogen Lyman-alpha line from 121 nm down to the X-ray band of 10 nm, and therefore having photons with energies from 10.26 eV up to 124.24 eV. EUV is naturally generated by the solar corona and artificially by plasma, high harmonic generation sources and synchrotron light sources. Since UVC extends to 100 nm, there is some overlap in the terms.
Electron-beam-induced deposition (EBID) is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a scanning electron microscope, which results in high spatial accuracy and the possibility to produce free-standing, three-dimensional structures.
The proximity effect in electron beam lithography (EBL) is the phenomenon that the exposure dose distribution, and hence the developed pattern, is wider than the scanned pattern due to the interactions of the primary beam electrons with the resist and substrate. These cause the resist outside the scanned pattern to receive a non-zero dose.
Rutherford backscattering spectrometry (RBS) is an analytical technique used in materials science. Sometimes referred to as high-energy ion scattering (HEIS) spectrometry, RBS is used to determine the structure and composition of materials by measuring the backscattering of a beam of high energy ions (typically protons or alpha particles) impinging on a sample.
Electron-beam processing or electron irradiation (EBI) is a process that involves using electrons, usually of high energy, to treat an object for a variety of purposes. This may take place under elevated temperatures and nitrogen atmosphere. Possible uses for electron irradiation include sterilization, alteration of gemstone colors, and cross-linking of polymers.
Ion-beam lithography is the practice of scanning a focused beam of ions in a patterned fashion across a surface in order to create very small structures such as integrated circuits or other nanostructures.
X-ray lithography is a process used in semiconductor device fabrication industry to selectively remove parts of a thin film of photoresist. It uses X-rays to transfer a geometric pattern from a mask to a light-sensitive chemical photoresist, or simply "resist," on the substrate to reach extremely small topological size of a feature. A series of chemical treatments then engraves the produced pattern into the material underneath the photoresist.
Ion tracks are damage-trails created by swift heavy ions penetrating through solids, which may be sufficiently-contiguous for chemical etching in a variety of crystalline, glassy, and/or polymeric solids. They are associated with cylindrical damage-regions several nanometers in diameter and can be studied by Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), small-angle neutron scattering (SANS), small-angle X-ray scattering (SAXS) or gas permeation.
References
- ↑ Möller, Sören (2020). Accelerator Technology – Applications in Science, Medicine, and Industry (1 ed.). Springer Nature. ISBN 978-3-030-62307-4.