Short-channel effect

Last updated

In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. [1] [2]

See also

References

  1. ↑ F. D’Agostino, D. Quercia. "Short-Channel Effects in MOSFETs" (PDF).
  2. ↑ Principles of Semiconductor Devices. 7.7. Advanced MOSFET issues
This page is based on this Wikipedia article
Text is available under the CC BY-SA 4.0 license; additional terms may apply.
Images, videos and audio are available under their respective licenses.