A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.
In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote a valence electron bound to an atom to become a conduction electron, which is free to move within the crystal lattice and serve as a charge carrier to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band to the conduction band, then current can flow. Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances with large band gaps are generally insulators, those with smaller band gaps are semiconductors, while conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.
A laser diode is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.
Wide-bandgap semiconductors are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
A potential well is the region surrounding a local minimum of potential energy. Energy captured in a potential well is unable to convert to another type of energy because it is captured in the local minimum of a potential well. Therefore, a body may not proceed to the global minimum of potential energy, as it would naturally tend to do due to entropy.
Chalcogenide glass is a glass containing one or more chalcogens. Such glasses are covalently bonded materials and may be classified as covalent network solids. Polonium is also a chalcogen but is not used because of its strong radioactivity. Chalcogenide materials behave rather differently from oxides, in particular their lower band gaps contribute to very dissimilar optical and electrical properties.
GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100 and 150 °C.
Germanium telluride (GeTe) is a chemical compound of germanium and tellurium and is a component of chalcogenide glasses. It shows semimetallic conduction and ferroelectric behaviour.
A quantum dot solar cell (QDSC) is a solar cell design that uses quantum dots as the absorbing photovoltaic material. It attempts to replace bulk materials such as silicon, copper indium gallium selenide (CIGS) or cadmium telluride (CdTe). Quantum dots have bandgaps that are tunable across a wide range of energy levels by changing their size. In bulk materials, the bandgap is fixed by the choice of material(s). This property makes quantum dots attractive for multi-junction solar cells, where a variety of materials are used to improve efficiency by harvesting multiple portions of the solar spectrum.
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p-n junction will produce electric current in response to different wavelengths of light. The use of multiple semiconducting materials allows the absorbance of a broader range of wavelengths, improving the cell's sunlight to electrical energy conversion efficiency.
In physics, the radiative efficiency limit is the maximum theoretical efficiency of a solar cell using a single p-n junction to collect power from the cell where the only loss mechanism is radiative recombination in the solar cell. It was first calculated by William Shockley and Hans-Joachim Queisser at Shockley Semiconductor in 1961, giving a maximum efficiency of 30% at 1.1 eV. The limit is one of the most fundamental to solar energy production with photovoltaic cells, and is considered to be one of the most important contributions in the field.
In semiconductor physics, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the material has an "indirect gap". The band gap is called "direct" if the crystal momentum of electrons and holes is the same in both the conduction band and the valence band; an electron can directly emit a photon. In an "indirect" gap, a photon cannot be emitted because the electron must pass through an intermediate state and transfer momentum to the crystal lattice.
The quantum-confined Stark effect (QCSE) describes the effect of an external electric field upon the light absorption spectrum or emission spectrum of a quantum well (QW). In the absence of an external electric field, electrons and holes within the quantum well may only occupy states within a discrete set of energy subbands. Only a discrete set of frequencies of light may be absorbed or emitted by the system. When an external electric field is applied, the electron states shift to lower energies, while the hole states shift to higher energies. This reduces the permitted light absorption or emission frequencies. Additionally, the external electric field shifts electrons and holes to opposite sides of the well, decreasing the overlap integral, which in turn reduces the recombination efficiency of the system. The spatial separation between the electrons and holes is limited by the presence of the potential barriers around the quantum well, meaning that excitons are able to exist in the system even under the influence of an electric field. The quantum-confined Stark effect is used in QCSE optical modulators, which allow optical communications signals to be switched on and off rapidly.
Raphael Tsu is a Fellow of the American Physical Society and currently serves as a Distinguished Professor of electrical engineering at the University of North Carolina at Charlotte, Charlotte, NC.
Two-photon photovoltaic effect is an energy collection method based on two-photon absorption (TPA). The TPP effect can be thought of as the nonlinear equivalent of the traditional photovoltaic effect involving high optical intensities. This effect occurs when two photons are absorbed at the same time resulting in an electron-hole pair.
A. R. Forouhi and I. Bloomer deduced dispersion equations for the refractive index, n, and extinction coefficient, k, which were published in 1986 and 1988. The 1986 publication relates to amorphous materials, while the 1988 publication relates to crystalline. Subsequently, in 1991, their work was included as a chapter in “The Handbook of Optical Constants”. The Forouhi–Bloomer dispersion equations describe how photons of varying energies interact with thin films. When used with a spectroscopic reflectometry tool, the Forouhi–Bloomer dispersion equations specify n and k for amorphous and crystalline materials as a function of photon energy E. Values of n and k as a function of photon energy, E, are referred to as the spectra of n and k, which can also be expressed as functions of wavelength of light, λ, since E = hc/λ. The symbol h represents Planck’s constant and c, the speed of light in vacuum. Together, n and k are often referred to as the “optical constants” of a material.
The Urbach tail is an exponential part in the energy spectrum of the absorption coefficient. This tail appears near the optical band edge in amorphous, disordered and crystalline materials.
The Urbach Energy, or Urbach Edge, is a parameter typically denoted , with dimensions of energy, used to quantify energetic disorder in the band edges of a semiconductor. It is evaluated by fitting the absorption coefficient as a function of energy to an exponential function. It is often used to describe electron transport in structurally disordered semiconductors such a hydrogenated amorphous silicon.
The Tauc–Lorentz model is a mathematical formula for the frequency dependence of the complex-valued relative permittivity, sometimes referred to as the dielectric function. The model has been used to fit the complex refractive index of amorphous semiconductor materials at frequencies greater than their optical band gap. The dispersion relation bears the names of Jan Tauc and Hendrik Lorentz, whose previous works were combined by G. E. Jellison and F. A. Modine to create the model. The model was inspired, in part, by shortcomings of the Forouhi–Bloomer model, which is aphysical due to its incorrect asymptotic behavior and non-Hermitian character. Despite the inspiration, the Tauc–Lorentz model is itself aphysical due to being non-Hermitian and non-analytic in the upper half-plane. Further researchers have modified the model to address these shortcomings.
The Forouhi–Bloomer model is a mathematical formula for the frequency dependence of the complex-valued refractive index. The model can be used to fit the refractive index of amorphous and crystalline semiconductor and dielectric materials at energies near and greater than their optical band gap. The dispersion relation bears the names of Rahim Forouhi and Iris Bloomer, who created the model and interpreted the physical significance of its parameters. The model is aphysical due to its incorrect asymptotic behavior and non-Hermitian character. These shortcomings inspired modified versions of the model as well as development of the Tauc–Lorentz model.
