# Thyristor conduction angle

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Thyristor conduction angle is the total angle through which the thyristor usually conducts power. This angle is used as an independent variable to yield the most direct and efficient computation of performance parameters. The thyristor conduction angle is considered to be the most direct method to analyse thyristor voltage controlled RL loads. [1]

A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials. It acts exclusively as a bistable switch, conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reversed biased, or until the voltage is removed. A three-lead thyristor is designed to control the larger current of the Anode to Cathode path by controlling that current with the smaller current of its other lead, known as its Gate. In contrast, a two-lead thyristor is designed to switch on if the potential difference between its leads is sufficiently large.

Electrical resistivity is a fundamental property of a material that quantifies how strongly that material opposes the flow of electric current. A low resistivity indicates a material that readily allows the flow of electric current. Resistivity is commonly represented by the Greek letter ρ (rho). The SI unit of electrical resistivity is the ohm-metre (Ω⋅m). As an example, if a 1 m × 1 m × 1 m solid cube of material has sheet contacts on two opposite faces, and the resistance between these contacts is 1 Ω, then the resistivity of the material is 1 Ω⋅m.

An electrical load is an electrical component or portion of a circuit that consumes (active) electric power. This is opposed to a power source, such as a battery or generator, which produces power. In electric power circuits examples of loads are appliances and lights. The term may also refer to the power consumed by a circuit.

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A diode is a two-terminal electronic component that conducts current primarily in one direction ; it has low resistance in one direction, and high resistance in the other. A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a heated cathode and a plate, in which electrons can flow in only one direction, from cathode to plate. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other materials such as gallium arsenide and germanium are used.

In electronics, a vacuum tube, an electron tube, or valve or, colloquially, a tube, is a device that controls electric current flow in a high vacuum between electrodes to which an electric potential difference has been applied.

A rectifier is an electrical device that converts alternating current (AC), which periodically reverses direction, to direct current (DC), which flows in only one direction.

A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction that acts exclusively as an electrically controlled switch.

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action. Although the structure of the IGBT is topologically the same as a thyristor with a 'MOS' gate, the thyristor action is completely suppressed and only the transistor action is permitted in the entire device operation range. It switches electric power in many applications: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts, air-conditioners and even stereo systems with switching amplifiers.

A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.

TRIAC, from triode for alternating current, is a generic trademark for a three terminal electronic component that conducts current in either direction when triggered. Its formal name is bidirectional triode thyristor or bilateral triode thyristor. A thyristor is analogous to a relay in that a small voltage induced current can control a much larger voltage and current. The illustration on the right shows the circuit symbol for a TRIAC where A1 is Anode 1, A2 is Anode 2, and G is Gate. Anode 1 and Anode 2 are normally termed Main Terminal 1 (MT1) and Main Terminal 2 (MT2) respectively.

A thyratron is a type of gas-filled tube used as a high-power electrical switch and controlled rectifier. Thyratrons can handle much greater currents than similar hard-vacuum tubes. Electron multiplication occurs when the gas becomes ionized, producing a phenomenon known as Townsend discharge. Gases used include mercury vapor, xenon, neon, and hydrogen. Unlike a vacuum tube (valve), a thyratron cannot be used to amplify signals linearly.

The DIAC is a diode that conducts electrical current only after its breakover voltage, VBO, has been reached momentarily. The term is an acronym of "diode for alternating current".

An ignitron is a type of gas-filled tube used as a controlled rectifier and dating from the 1930s. Invented by Joseph Slepian while employed by Westinghouse, Westinghouse was the original manufacturer and owned trademark rights to the name "Ignitron". Ignitrons are closely related to mercury-arc valves but differ in the way the arc is ignited. They function similarly to thyratrons; a triggering pulse to the igniter electrode turns the device "on", allowing a high current to flow between the cathode and anode electrodes. After it is turned on, the current through the anode must be reduced to zero to restore the device to its nonconducting state. They are used to switch high currents in heavy industrial applications.

The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor.

A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.

A mercury-arc valve or mercury-vapor rectifier or (UK) mercury-arc rectifier is a type of electrical rectifier used for converting high-voltage or high-current alternating current (AC) into direct current (DC). It is a type of cold cathode gas-filled tube, but is unusual in that the cathode, instead of being solid, is made from a pool of liquid mercury and is therefore self-restoring. As a result, mercury-arc valves were much more rugged and long-lasting, and could carry much higher currents than most other types of gas discharge tube.

An electronic component is any basic discrete device or physical entity in an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components.

A crowbar circuit is an electrical circuit used for preventing an overvoltage condition of a power supply unit from damaging the circuits attached to the power supply. It operates by putting a short circuit or low resistance path across the voltage output (Vo), quite like were one to drop a crowbar across the output terminals of the power supply. Crowbar circuits are frequently implemented using a thyristor, TRIAC, trisil or thyratron as the shorting device. Once triggered, they depend on the current-limiting circuitry of the power supply or, if that fails, the blowing of the line fuse or tripping the circuit breaker.

Trisil is a trade name for a thyristor surge protection device, an electronic component designed to protect electronic circuits against overvoltage. Unlike a transient voltage suppression diodes, such as Transil, a Trisil acts as a crowbar device, switching ON when the voltage on it exceeds its breakover voltage.

A solid-state relay (SSR) is an electronic switching device that switches on or off when a small external voltage is applied across its control terminals. SSRs consist of a sensor which responds to an appropriate input, a solid-state electronic switching device which switches power to the load circuitry, and a coupling mechanism to enable the control signal to activate this switch without mechanical parts. The relay may be designed to switch either AC or DC to the load. It serves the same function as an electromechanical relay, but has no moving parts.

A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device. It was invented at General Electric. GTOs, as opposed to normal thyristors, are fully controllable switches which can be turned on and off by their third lead, the gate lead.

Quadracs are a special type of thyristor which combines a "diac" and a "triac" in a single package. The diac is the triggering device for the triac. Thyristors are four-layer (PNPN) semiconductor devices that act as switches, rectifiers or voltage regulators in a variety of applications. When triggered, thyristors turn on and become low-resistance current paths. They remain so even after the trigger is removed, and until the current is reduced to a certain level. Diacs are bi-directional diodes that switch AC voltages and trigger triacs or silicon-controlled rectifiers (SCRs). Except for a small leakage current, diacs do not conduct until the breakover voltage is reached. Triacs are three-terminal, silicon devices that function as two SCRs configured in an inverse, parallel arrangement. They provide load current during both halves of the AC supply voltage. By combining the functions of diacs and triacs, quadracs eliminate the need to buy and assemble discrete parts.

A Triggering device is an electronic circuit, such as a Schmitt trigger, which is used to control another electronic circuit.

## References

1. SA Hamed, BJ Chalmers, New method of analysis and performance prediction for thyristor voltage-controlled RL loads, IEE Proceedings B (Electric Power Applications), pp339-347, Vol. 134, No.6 , 1987.