Evaporation is a common method of thin-film deposition. The source material is evaporated in a vacuum. The vacuum allows vapor particles to travel directly to the target object (substrate), where they condense back to a solid state. Evaporation is used in microfabrication, and to make macro-scale products such as metallized plastic film.
Evaporation deposition was first observed in incandescent light bulbs during the late nineteenth century. The problem of bulb blackening was one of the main obstacles to making bulbs with long life, and received a great amount of study by Thomas Edison and his General Electric company, as well as many others working on their own lightbulbs. The phenomenon was first adapted to a process of vacuum deposition by Pohl and Pringsheim in 1912. However, it found little use until the 1930s, when people began experimenting with ways to make aluminum-coated mirrors for use in telescopes. Aluminum was far too reactive to be used in chemical wet deposition or electroplating methods. John D. Strong was successful in making the first aluminum telescope-mirrors in the 1930s using evaporation deposition. Because it produces an amorphous (glassy) coating rather than a crystalline one, with high uniformity and precise control of thickness, thereafter it became a common process for producing thin-film optical coatings from a variety of materials, both metal and non-metal (dielectric), and has been adopted for many other uses, such as coating plastic toys and automobile parts, the production of semiconductors and microchips, and Mylar films with uses ranging from capacitors to spacecraft thermal control. [1]
Evaporation involves two basic processes: a hot source evaporates a material and it condenses on a colder substrate that is below its melting point. It resembles the familiar process by which liquid water appears on the lid of a boiling pot. However, the gaseous environment and heat source (see "Equipment" below) are different. Liquids such as water cannot exist in a vacuum, because they require some level of external pressure to hold the atoms and molecules together. In a vacuum, materials sublimate (vaporize), expand outward, and upon contact with a surface condense back into a solid (deposit) without ever passing through a liquid state. Thus, in comparison to water, the process is more like frost forming on a window.
Evaporation takes place in a vacuum, i.e. vapors other than the source material are almost entirely removed before the process begins. In high vacuum (with a long mean free path), evaporated particles can travel directly to the deposition target without colliding with the background gas. (By contrast, in the boiling pot example, the water vapor pushes the air out of the pot before it can reach the lid.) At a typical pressure of 10−4 Pa, a 0.4-nm particle has a mean free path of 60 m. Hot objects in the evaporation chamber, such as heating filaments, produce unwanted vapors that limit the quality of the vacuum.
Evaporated atoms that collide with foreign particles may react with them; for instance, if aluminium is deposited in the presence of oxygen, it will form aluminium oxide. They also reduce the amount of vapor that reaches the substrate, which makes the thickness difficult to control.
Evaporated materials deposit nonuniformly if the substrate has a rough surface (as integrated circuits often do). Because the evaporated material attacks the substrate mostly from a single direction, protruding features block the evaporated material from some areas. This phenomenon is called "shadowing" or "step coverage."
When evaporation is performed in poor vacuum or close to atmospheric pressure, the resulting deposition is generally non-uniform and tends not to be a continuous or smooth film. Rather, the deposition will appear fuzzy.
Any evaporation system includes a vacuum pump. It also includes an energy source that evaporates the material to be deposited. Many different energy sources exist:
Some systems mount the substrate on an out-of-plane planetary mechanism. The mechanism rotates the substrate simultaneously around two axes, to reduce shadowing.
An important example of an evaporative process is the production of aluminized PET film packaging film in a roll-to-roll web system. Often, the aluminum layer in this material is not thick enough to be entirely opaque since a thinner layer can be deposited more cheaply than a thick one. The main purpose of the aluminum is to isolate the product from the external environment by creating a barrier to the passage of light, oxygen, or water vapor.
Evaporation is commonly used in microfabrication to deposit metal films.
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
MEMS is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size, and MEMS devices generally range in size from 20 micrometres to a millimetre, although components arranged in arrays can be more than 1000 mm2. They usually consist of a central unit that processes data and several components that interact with the surroundings.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs at microwave frequencies, and to manufacture the lasers used to read optical discs.
Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique where a high-power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited. This material is vaporized from the target which deposits it as a thin film on a substrate. This process can occur in ultra high vacuum or in the presence of a background gas, such as oxygen which is commonly used when depositing oxides to fully oxygenate the deposited films.
Since the mid-20th century, electron-beam technology has provided the basis for a variety of novel and specialized applications in semiconductor manufacturing, microelectromechanical systems, nanoelectromechanical systems, and microscopy.
A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, LEDs, optical coatings, hard coatings on cutting tools, and for both energy generation and storage. It is also being applied to pharmaceuticals, via thin-film drug delivery. A stack of thin films is called a multilayer.
Plating is a finishing process in which a metal is deposited on a surface. Plating has been done for hundreds of years; it is also critical for modern technology. Plating is used to decorate objects, for corrosion inhibition, to improve solderability, to harden, to improve wearability, to reduce friction, to improve paint adhesion, to alter conductivity, to improve IR reflectivity, for radiation shielding, and for other purposes. Jewelry typically uses plating to give a silver or gold finish.
Metallizing is the general name for the technique of coating metal on the surface of objects. Metallic coatings may be decorative, protective or functional.
Ion plating (IP) is a physical vapor deposition (PVD) process that is sometimes called ion assisted deposition (IAD) or ion vapor deposition (IVD) and is a modified version of vacuum deposition. Ion plating uses concurrent or periodic bombardment of the substrate, and deposits film by atomic-sized energetic particles called ions. Bombardment prior to deposition is used to sputter clean the substrate surface. During deposition the bombardment is used to modify and control the properties of the depositing film. It is important that the bombardment be continuous between the cleaning and the deposition portions of the process to maintain an atomically clean interface. If this interface is not properly cleaned, then it can result into a weaker coating or poor adhesion.
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term CBE is often used interchangeably with metal-organic molecular beam epitaxy (MOMBE). The nomenclature does differentiate between the two processes, however. When used in the strictest sense, CBE refers to the technique in which both components are obtained from gaseous sources, while MOMBE refers to the technique in which the group III component is obtained from a gaseous source and the group V component from a solid source.
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesizing nanomaterials.
Electron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase. These atoms then precipitate into solid form, coating everything in the vacuum chamber with a thin layer of the anode material.
Vacuum deposition is a group of processes used to deposit layers of material atom-by-atom or molecule-by-molecule on a solid surface. These processes operate at pressures well below atmospheric pressure. The deposited layers can range from a thickness of one atom up to millimeters, forming freestanding structures. Multiple layers of different materials can be used, for example to form optical coatings. The process can be qualified based on the vapor source; physical vapor deposition uses a liquid or solid source and chemical vapor deposition uses a chemical vapor.
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation. PVD is used in the manufacturing of items which require thin films for optical, mechanical, electrical, acoustic or chemical functions. Examples include semiconductor devices such as thin-film solar cells, microelectromechanical devices such as thin film bulk acoustic resonator, aluminized PET film for food packaging and balloons, and titanium nitride coated cutting tools for metalworking. Besides PVD tools for fabrication, special smaller tools used mainly for scientific purposes have been developed.
Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.
Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV. The sputtered ions can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber. Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film.
Electrostatic spray-assisted vapour deposition (ESAVD) is a technique to deposit both thin and thick layers of a coating onto various substrates. In simple terms chemical precursors are sprayed across an electrostatic field towards a heated substrate, the chemicals undergo a controlled chemical reaction and are deposited on the substrate as the required coating. Electrostatic spraying techniques were developed in the 1950s for the spraying of ionised particles on to charged or heated substrates.
The vapor–liquid–solid method (VLS) is a mechanism for the growth of one-dimensional structures, such as nanowires, from chemical vapor deposition. The growth of a crystal through direct adsorption of a gas phase on to a solid surface is generally very slow. The VLS mechanism circumvents this by introducing a catalytic liquid alloy phase which can rapidly adsorb a vapor to supersaturation levels, and from which crystal growth can subsequently occur from nucleated seeds at the liquid–solid interface. The physical characteristics of nanowires grown in this manner depend, in a controllable way, upon the size and physical properties of the liquid alloy.
Stencil lithography is a novel method of fabricating nanometer scale patterns using nanostencils, stencils with nanometer size apertures. It is a resist-less, simple, parallel nanolithography process, and it does not involve any heat or chemical treatment of the substrates .
Neyco is a French company founded in 1954, specialist in High Vacuum, UHV, Inorganic materials and thin films.