Hydrogen silsesquioxane

Last updated
Hydrogen silsesquioxane (R = H). Silsesquioxane T8 Cube.png
Hydrogen silsesquioxane (R = H).

Hydrogen silsesquioxane(s) (HSQ, H-SiOx, THn, H-resin) are inorganic compounds with the empirical formula [HSiO3/2]n. The cubic H8Si8O12 (TH8) is used as the visual representation for HSQ.[ clarification needed ] TH8, TH10, TH12, and TH14 have been characterized by elemental analysis, gas chromatography–mass spectroscopy (GC-MS), IR spectroscopy, and NMR spectroscopy. [1]

High purity semiconductor-grade HSQ has been investigated as a negative resist in photolithography and electron-beam (e-beam) lithography. [2] HSQ is commonly delivered in methyl isobutyl ketone (MIBK) and can be used to form 0.01–2 µm films on substrates/wafers. When exposed to electrons or extreme ultraviolet radiation (EUV), HSQ cross-links via hydrogen evolution concomitant with Si-O bond crosslinking. Recently, the possibility of crosslinking HSQ using ultrashort laser pulses through multiphoton absorption and its application to 3D printing of silica glass have been demonstrated. [3] [4] Sufficiently dosed and exposed regions form a low dielectric constant (low-k) Si rich oxide that is chemically resistant/insoluble towards developers, such as tetramethylammonium hydroxide (TMAH). Sub-10 nm patterning is achievable with HSQ. The nanoscale patterning capabilities and low-k of the Si rich oxide produced is potentially of broad scope of nano applications and devices. [5]

HSQ has been available as 1 and 6% (wt%) MIBK solutions from Dow Inc. (Formally Dow Corning), called XR-1541-001 and XR-1541-006, respectively. HSQ in MIBK has a short shelf life. Alternatively, Applied Quantum Materials Inc. (AQM) produces HSQ with a longer shelf life. [6] [7] AQM HSQ solutions are available in the United States from DisChem, Inc.

Related Research Articles

Photolithography is a process used in the manufacturing of integrated circuits. It involves using light to transfer a pattern onto a substrate, typically a silicon wafer.

<span class="mw-page-title-main">Photoresist</span> Light-sensitive material used in making electronics

A photoresist is a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is crucial in the electronics industry.

<span class="mw-page-title-main">Excimer laser</span> Type of ultraviolet laser important in chip manufacturing and eye surgery

An excimer laser, sometimes more correctly called an exciplex laser, is a form of ultraviolet laser which is commonly used in the production of microelectronic devices, semiconductor based integrated circuits or "chips", eye surgery, and micromachining.

In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant relative to silicon dioxide. Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts from one another. As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds and lower heat dissipation. In conversation such materials may be referred to as "low-k" rather than "low-κ" (low-kappa).

<span class="mw-page-title-main">Electron-beam lithography</span> Lithographic technique that uses a scanning beam of electrons

Electron-beam lithography is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.

<span class="mw-page-title-main">Alec Broers, Baron Broers</span> British electrical engineer

Alec Nigel Broers, Baron Broers, is a British electrical engineer.

Nanolithography (NL) is a growing field of techniques within nanotechnology dealing with the engineering of nanometer-scale structures on various materials.

<span class="mw-page-title-main">Extreme ultraviolet lithography</span> Lithography using 13.5 nm UV light

Extreme ultraviolet lithography is a cutting-edge technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses extreme ultraviolet (EUV) light to create intricate patterns on silicon wafers.

Next-generation lithography or NGL is a term used in integrated circuit manufacturing to describe the lithography technologies in development which are intended to replace current techniques. Driven by Moore's law in the semiconductor industries, the shrinking of the chip size and critical dimension continues. The term applies to any lithography method which uses a shorter-wavelength light or beam type than the current state of the art, such as X-ray lithography, electron beam lithography, focused ion beam lithography, and nanoimprint lithography. The term may also be used to describe techniques which achieve finer resolution features from an existing light wavelength.

<span class="mw-page-title-main">Nanoimprint lithography</span> Method of fabricating nanometer scale patterns using a special stamp

Nanoimprint lithography (NIL) is a method of fabricating nanometer-scale patterns. It is a simple nanolithography process with low cost, high throughput and high resolution. It creates patterns by mechanical deformation of imprint resist and subsequent processes. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting. Adhesion between the resist and the template is controlled to allow proper release.

Interference lithography is a technique for patterning regular arrays of fine features, without the use of complex optical systems or photomasks.

In chemistry, a halogen bond (XB) occurs when there is evidence of a net attractive interaction between an electrophilic region associated with a halogen atom in a molecular entity and a nucleophilic region in another, or the same, molecular entity. Like a hydrogen bond, the result is not a formal chemical bond, but rather a strong electrostatic attraction. Mathematically, the interaction can be decomposed in two terms: one describing an electrostatic, orbital-mixing charge-transfer and another describing electron-cloud dispersion. Halogen bonds find application in supramolecular chemistry; drug design and biochemistry; crystal engineering and liquid crystals; and organic catalysis.

<span class="mw-page-title-main">Silicon monoxide</span> Chemical compound

Silicon monoxide is the chemical compound with the formula SiO where silicon is present in the oxidation state +2. In the vapour phase, it is a diatomic molecule. It has been detected in stellar objects and has been described as the most common oxide of silicon in the universe.

<span class="mw-page-title-main">Silsesquioxane</span> Molecular compound with applications in ceramics

A silsesquioxane is an organosilicon compound with the chemical formula [RSiO3/2]n. Silsesquioxanes are colorless solids that adopt cage-like or polymeric structures with Si-O-Si linkages and tetrahedral Si vertices. Silsesquioxanes are members of polyoctahedral silsesquioxanes ("POSS"), which have attracted attention as preceramic polymer precursors to ceramic materials and nanocomposites. Diverse substituents (R) can be attached to the Si centers. The molecules are unusual because they feature an inorganic silicate core and an organic exterior. The silica core confers rigidity and thermal stability.

<span class="mw-page-title-main">Multiphoton lithography</span> Technique for creating microscopic structures

Multiphoton lithography is similar to standard photolithography techniques; structuring is accomplished by illuminating negative-tone or positive-tone photoresists via light of a well-defined wavelength. The main difference is the avoidance of photomasks. Instead, two-photon absorption is utilized to induce a change in the solubility of the resist for appropriate developers.

<span class="mw-page-title-main">X-ray lithography</span> Lithographic technique that uses X-rays instead of light

X-ray lithography is a process used in semiconductor device fabrication industry to selectively remove parts of a thin film of photoresist. It uses X-rays to transfer a geometric pattern from a mask to a light-sensitive chemical photoresist, or simply "resist," on the substrate to reach extremely small topological size of a feature. A series of chemical treatments then engraves the produced pattern into the material underneath the photoresist.

<span class="mw-page-title-main">Thermal scanning probe lithography</span>

Thermal scanning probe lithography (t-SPL) is a form of scanning probe lithography (SPL) whereby material is structured on the nanoscale using scanning probes, primarily through the application of thermal energy.

<span class="mw-page-title-main">Pentamethylantimony</span> Chemical compound

Pentamethylantimony or pentamethylstiborane is an organometalllic compound containing five methyl groups bound to an antimony atom with formula Sb(CH3)5. It is an example of a hypervalent compound. The molecular shape is trigonal bipyramid. Some other antimony(V) organometallic compounds include pentapropynylantimony (Sb(CCCH3)5) and pentaphenyl antimony (Sb(C6H5)5). Other known pentamethyl-pnictides include pentamethylbismuth and pentamethylarsenic.

<span class="mw-page-title-main">Nickel silicide</span> Chemical compound

Nickel silicides include several intermetallic compounds of nickel and silicon. Nickel silicides are important in microelectronics as they form at junctions of nickel and silicon. Additionally thin layers of nickel silicides may have application in imparting surface resistance to nickel alloys.

<span class="mw-page-title-main">Laura Heyderman</span> Physicist

Laura Jane Heyderman is a physicist, materials scientist, academic and Professor of Mesoscopic Systems at the Department of Materials, ETH Zurich and Paul Scherrer Institute. Her research is focused on magnetism and magnetic materials.

References

  1. Agaskar, P. A.; Day, V. W.; Klemperer, W. G. (1987-09-01). "A new route to trimethylsilylated spherosilicates. Synthesis and structure of [Si12O18](OSiMe3)12, D3h-[Si14O21](OSiMe3)14, and C2v-[Si14O21](OSiMe3)14". Journal of the American Chemical Society. 109 (18): 5554–5556. doi:10.1021/ja00252a058. ISSN   0002-7863.
  2. Namatsu, H.; Yamaguchi, T.; Nagase, M.; Yamazaki, K.; Kurihara, K. (1998-03-01). "Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations". Microelectronic Engineering. International Conference on Micro- and Nanofarbication. 41–42: 331–334. doi:10.1016/S0167-9317(98)00076-8. ISSN   0167-9317.
  3. Jin, Feng; Liu, Jie; Zhao, Yuan-Yuan; Dong, Xian-Zi; Zheng, Mei-Ling; Duan, Xuan-Ming (2022-03-15). "λ/30 inorganic features achieved by multi-photon 3D lithography". Nature Communications. 13 (1). doi:10.1038/s41467-022-29036-7. ISSN   2041-1723. PMC   8924217 . PMID   35292637.
  4. Huang, Po-Han; Laakso, Miku; Edinger, Pierre; Hartwig, Oliver; Duesberg, Georg S.; Lai, Lee-Lun; Mayer, Joachim; Nyman, Johan; Errando-Herranz, Carlos; Stemme, Göran; Gylfason, Kristinn B.; Niklaus, Frank (2023-06-07). "Three-dimensional printing of silica glass with sub-micrometer resolution". Nature Communications. 14 (1). doi:10.1038/s41467-023-38996-3. ISSN   2041-1723. PMC   10244462 . PMID   37280208.
  5. Chen, Yifang (2015-03-05). "Nanofabrication by electron beam lithography and its applications: A review". Microelectronic Engineering. 135: 57–72. doi:10.1016/j.mee.2015.02.042. ISSN   0167-9317.
  6. Shen, Jiashi; Aydinoglu, Ferhat; Soltani, Mohammad; Cui, Bo (2019-03-01). "E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life". Journal of Vacuum Science & Technology B. 37 (2): 021601. doi:10.1116/1.5079657. ISSN   2166-2746. S2CID   104333826.
  7. Jiashi, Shen (2018-09-28). E-beam Lithography using Dry Powder HSQ Resist Having Long Shelf Life and Nanogap Electrode Fabrication (Thesis).

Further reading