MOSAID

Last updated

MOSAID is a semiconductor technology company incorporated in Ottawa, Canada. It was founded in 1975 as a DRAM design company, and later branched out into other areas including EDA software, semiconductor reverse engineering, test equipment manufacturing and intellectual property licensing. MOSAID went public in 1994 with a listing on the Toronto Stock Exchange under ticker symbol "MSD". By 2011 the business was based exclusively on patent licensing and the company was acquired by Sterling Partners, a US-based private equity firm. MOSAID was renamed Conversant Intellectual Property Management in 2013. In 2021, the company announced it was changing its name back to MOSAID.

Contents

MOSAID Technologies Incorporated
Company typePrivate Company
IndustrySemiconductor
Founded1975
FounderDick Foss, Bob Harland
FateTaken private by Sterling Partners in 2011, renamed Conversant Intellectual Property Management in 2013, changed its name back to MOSAID in 2021
Headquarters
Ottawa
,
Canada
Key people
Boris Teksler, President & CEO

Jamie McDole, General Counsel

Pam Yeh, Chief Financial Officer
ProductsSemiconductor design services, Semiconductor Components, Reverse Engineering services, Test Systems, Patent Licensing
RevenueCA$82,926,000 [1] (2001)
CA$7,002,000 (2001)
Number of employees
233 (2001)
Website www.mosaid.com

Early Years before IPO (1975-1994)

MOSAID was launched in 1975 by Richard Foss and Robert Harland, [2] who had been employed at Microsystems International. On their return from the 1975 ISSCC conference where they had presented a paper [3] on MIL's 4kb DRAM, they found that they were no longer employed due to the company's bankruptcy proceedings. Their first project was a design for an improved 4kb DRAM [4] which was sold to RCA. MOSAID went on to develop every generation of DRAM up to 256Mb in 1998.

Soon after the company was launched, Robert Harland invented the folded bitline DRAM architecture, a technique eventually adopted by the entire DRAM industry. The patent [5] was sold to Standard Microsystems, whose head of R&D Paul Richman [6] was a member of MOSAID's board of directors. The sale generated more than $1M which was used to fund the company's growth.

1Mb CMOS DRAM designed by MOSAID Sanyo Fast 1M DRAM rotated.jpg
1Mb CMOS DRAM designed by MOSAID

In 1988, as the DRAM industry transitioned from NMOS to CMOS process technology, MOSAID started the design of a 1Mb CMOS DRAM [4] employing a regulated high voltage pumped supply and static wordline driver to replace the conventional NMOS boosted wordline approach. This work resulted in the Foss [7] and Lines [8] patents which laid the foundations for MOSAID's patent licensing business.

EDA tools were developed for internal use and for external sales. The MOSAID 1000 circuit simulator ran on a PDP-11 minicomputer and could handle circuits having as many as 1000 nodes. MOSFIT, [9] an efficient MOS transistor modelling program addressing short channel effects was developed and subsequently licensed to Keithley Instruments [10] for use with their parameter analyzer products.

MOSAID reverse engineering report on the Toshiba 1Mb CMOS DRAM MOSAID 1M DRAM report.jpg
MOSAID reverse engineering report on the Toshiba 1Mb CMOS DRAM

During the early years MOSAID was perhaps best known for its reverse engineering reports focused mainly on semiconductor memory devices. These reports included complete circuit schematics, floorplans, simulations, extracted device parameters and sometimes critique of the techniques employed. The reports found wide use in competitive analysis, patent licensing negotiations, and outright copying of industry leading devices. The reverse engineering business was spun off in 1989 as Semiconductor Insights, now TechInsights. [11]

In 1982 the SRT-1 [12] (Simple Memory Tester) was introduced. This was a benchtop unit within a Tektronix TM504 enclosure which displayed a bitmap on a CRT screen. Test patterns were set up with front panel switches and timing parameters adjusted with potentiometers. Absolutely no software was required. A California subsidiary was subsequently formed for sales and marketing.

In 1985 the MS2000 series of testers was launched. [4] These were also benchtop units but were now controlled by a PC running Microsoft Windows. Ease of use was a key selling point with test setup controlled by a point and click graphical interface without the need to write test programs. The free-standing MS3400 series was introduced in 1991 [4] to address emerging memory products such as flash and SDRAM. In 1997 the higher performance MS4100 [13] series providing full speed testing of SDRAM was launched.

Years as a Publicly Traded Company (1994-2011)

Following the IPO in 1994 MOSAID began development of custom embedded memory such as HDRAM, [14] a high-density RAM for logic processes that was used by Newbridge Networks for a custom ASIC employed in the core of their ATM switch product. [15] Accelerix, [16] a joint venture with UK-based Symbionics was formed to develop a fully integrated 2D graphics accelerator and frame buffer in a merged DRAM-logic process. The Accelerix chip failed to gain market traction as 3D graphics accelerators were introduced.

MOSAID continued designing industry standard DRAM components for semiconductor manufacturers. As a contributing member of the JEDEC standards organization, MOSAID helped define and develop some of the earliest Synchronous DRAM (SDRAM) devices [4] and progressed to Double Date Rate (DDR) SDRAM as well. MOSAID was also active in the Synchronous Link DRAM (SLDRAM) Consortium, an open-standards based alternative to Direct RAMBUS DRAM (DRDRAM), and developed a 72Mb SLDRAM [17] prototype for the members of the Consortium. [18] Although SLDRAM did not enter high-volume production, many of the features were incorporated later into JEDEC DDR standards.

MOSAID 2Mb ternary dynamic CAM manufactured in TSMC 0.25um eDRAM process MOSAID 2M DCAM.jpg
MOSAID 2Mb ternary dynamic CAM manufactured in TSMC 0.25um eDRAM process

1999 saw the development of several networking products to establish a MOSAID-branded fabless component supply business. [19] These included a Gbit Ethernet switch on a chip with integrated DRAM switching fabric developed as a joint venture with Toshiba, a DRAM-based content addressable memory (CAM) for fast routing table lookup, and a multiprocessor cryptographic accelerator developed in partnership with Chrysalis-ITS. The dot-com crash in 2000 laid low MOSAID's plans to become a merchant semiconductor supplier.

Also in 1999 the first broad patent licensing agreement was signed with Fujitsu. [20] Within a few years all the major Japanese DRAM manufacturers had licensed the MOSAID portfolio. The largest DRAM players would need litigation to encourage them to take a license, beginning with Samsung in 2001 [21] followed by Infineon, Hynix, and Micron in later years. Patent licensing became MOSAID's most profitable revenue stream.

After the fabless component supply business shut down was completed in 2003, MOSAID entered the SIP (Semiconductor IP) market to provide silicon-proven macrocell blocks to system-on-chip developers. The first product was a DDR3 SDRAM interface and controller. California-based Virtual Silicon was acquired in 2005 [22] to add standard cell libraries and PLL macrocells to the SIP offerings.

Following a shareholder proxy battle in 2007, [23] the memory tester and SIP businesses were divested to focus on patent licensing. The SIP business was sold to Synopsys [24] and the tester business was sold to Teradyne. [25] Support and maintenance of the installed base of MOSAID testers was taken on by a startup company EPM Test. [26] The company retained a small R&D group which developed a high performance NAND flash memory interface called HLNAND, [27] which employed a synchronous point-to-point DDR ring architecture.

With the aging of MOSAID's home-grown patent portfolio, patent acquisitions were seen as the key to future growth. In 2011, in the midst of a hostile takeover bid from WiLAN, [28] the company acquired a large portfolio of wireless patents from Nokia through its Core Wireless subsidiary. [29] Shortly thereafter, the business was taken private by Sterling Partners, [30] a US-based private equity firm.

A Privately Held Company Once Again (2011-present)

In 2013, Sterling Partners and MOSAID established Longitude Licensing in Dublin, Ireland to hold and manage newly acquired patent portfolios. [31] MOSAID subsequently provided resources to assist in the licensing of these portfolios. One such portfolio included thousands of memory related patents acquired from the leading Japanese DRAM manufacturer Elpida. Longitude Licensing was acquired in 2016 by Vector Capital, the owner of IPValue. [32]

MOSAID was renamed Conversant Intellectual Property Management in 2013. [33] In 2015, the R&D team along with the HLNAND technology was divested to Novachips, a Korean SSD controller company. [34] The company enjoyed some modest success [35] licensing the Core Wireless portfolio culminating in a transaction with RPX in 2020. [36] In 2021, the company changed its name back to MOSAID while continuing with the intellectual property management business. [37]


  1. "MOSAID 2001 Annual Report". www.sedar.com. Retrieved 2020-11-13.
  2. "History | Conversant" . Retrieved 2020-10-31.
  3. Foss, R.; Harland, R. (1975). Simplified peripheral circuits for a marginally testable 4K RAM. 1975 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. XVIII. pp. 102–103. doi:10.1109/ISSCC.1975.1155354.
  4. 1 2 3 4 5 "MOSAID 1994 Annual Report: Introducing MOSAID". 1996-11-11. Archived from the original on 1996-11-11. Retrieved 2020-10-31.
  5. US 4,045,783,"Mos one transistor cell ram having divided and balanced bit lines, coupled by regenerative flip-flop sense amplifiers, and balanced access circuitry",issued 1977-08-30
  6. "History of Standard Microsystems Corporation – FundingUniverse". www.fundinguniverse.com. Retrieved 2020-10-31.
  7. US 5,699,313,"High voltage boosted word line supply charge pump and regulator for dram",issued 1997-12-16
  8. US 5,214,602,"Dynamic memory word line driver scheme",issued 1993-05-25
  9. Silburt, A. L.; Foss, R. C.; Petrie, W. F. (1984). "An Efficient MOS Transistor Model for Computer-Aided Design". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 3 (1): 104–111. doi:10.1109/TCAD.1984.1270063. ISSN   1937-4151. S2CID   16106485.
  10. Gribben, Anthony (1988). "MOSFET Characterization and its Application to Process Control and VLSI Circuit Design" . Retrieved 31 October 2020.
  11. "About Us | TechInsights". www.techinsights.com. Retrieved 2020-11-01.
  12. "MOSAID SRT-1". TekWiki. Retrieved 31 October 2020.
  13. "MOSAID 1997 Annual Report: Systems Division". www.sedar.com. Retrieved 2020-11-01.
  14. "MOSAID 1995 Annual Report: Report on the Semiconductor Division". 1996-11-11. Archived from the original on 1996-11-11. Retrieved 2020-11-01.
  15. Gillingham, P.; Hold, B.; Mes, I.; O'Connell, C.; Schofield, P.; Skjaveland, K.; Torrance, R.; Wojcicki, T.; Chow, H. (February 1996). "A 768 k embedded DRAM for 1.244 Gb/S ATM switch in a 0.8 μm logic process". 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC. pp. 262–263. doi:10.1109/ISSCC.1996.488615. ISBN   0-7803-3136-2. S2CID   36066722.
  16. "MOSAID ANNOUNCES ACCELERIX INVESTMENT AND RECEIPT OF $4 MILLION DESIGN CONTRACT". 1996-11-11. Archived from the original on 1996-11-11. Retrieved 2020-11-12.
  17. Paris, L.; Benzreba, J.; Mone, P. De; Dunn, M.; Falkenhagen, L.; Gillingham, P.; Harrison, I.; He, W.; MacDonald, D.; MacIntosh, M.; Millar, B. (1999). "A 800 MB/S 72 Mb SLDRAM with digitally-calibrated DLL". 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278). pp. 414–415. doi:10.1109/ISSCC.1999.759329. ISBN   0-7803-5126-6. S2CID   24621965.
  18. "SLDRAM, Inc". 1998-12-02. Archived from the original on 1998-12-02. Retrieved 2020-11-14.
  19. "MOSAID 1999 Annual Report: New Chips Help Optimize Networks". www.sedar.com. Retrieved 2020-11-01.
  20. "MOSAID Licenses Patent Portfolio to Fujitsu". www.sedar.com. 14 January 1999. Retrieved 2020-11-01.
  21. "MOSAID Initiates Litigation Against Samsung for Patent Infringement". www.sedar.com. Retrieved 2020-11-01.
  22. "MOSAID Acquires Virtual Silicon". www.sedar.com. Retrieved 2020-11-01.
  23. "MOSAID Rejects Activist Hedge Fund Demand". www.sedar.com. Retrieved 2020-11-01.
  24. "MOSAID to Sell Semiconductor Assets to Synopsys". www.sedar.com. Retrieved 2020-11-01.
  25. "MOSAID to Sell Memory Test Assets to Teradyne". www.sedar.com. Retrieved 2020-11-01.
  26. "EPM Test Incorporated Home Page".
  27. "HLNAND: A New Standard for High Performance Flash Memory" (PDF). Flash Memory Summit. 2008.
  28. "WiLAN Announces Intention to Make an All-Cash Takeover Offer for MOSAID Technologies and C$200 Million Extendible Convertible Debenture Offering". www.wilan.com. Retrieved 2020-11-01.
  29. "MOSAID Acquires 1,200 Nokia Standards-Essential Wireless Patents and 800 Wireless Implementation Patents". www.sedar.com. Retrieved 2020-11-01.
  30. "Sterling Partners Agrees to Acquire MOSAID Technologies for $46 per Share". www.sedar.com. Retrieved 2020-11-01.
  31. "LONGITUDE LICENSING".
  32. "Vector Capital Acquires Longitude Licensing".
  33. "MOSAID DOUBLES IN SIZE – AND BECOMES CONVERSANT". Archived from the original on 2016-07-30.
  34. "Novachips Acquires HLNAND Flash Memory Technology" (PDF).
  35. "JUDGE GILSTRAP AWARDS CORE WIRELESS $456,000 IN ENHANCED DAMAGES FOR LG'S WILLFUL INFRINGEMENT".
  36. "RPX CORPORATION AND CONVERSANT WIRELESS LICENSING S.À R.L. ANNOUNCE LICENSING TRANSACTION".
  37. "Mosaid Technologies Returns to its Roots - Conversant is once again Mosaid", Design & Reuse, 14 April 2021

Related Research Articles

<span class="mw-page-title-main">Dynamic random-access memory</span> Type of computer memory

Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory, since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

<span class="mw-page-title-main">Synchronous dynamic random-access memory</span> Type of computer memory

Synchronous dynamic random-access memory is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal.

Rambus DRAM (RDRAM), and its successors Concurrent Rambus DRAM (CRDRAM) and Direct Rambus DRAM (DRDRAM), are types of synchronous dynamic random-access memory (SDRAM) developed by Rambus from the 1990s through to the early 2000s. The third-generation of Rambus DRAM, DRDRAM was replaced by XDR DRAM. Rambus DRAM was developed for high-bandwidth applications and was positioned by Rambus as replacement for various types of contemporary memories, such as SDRAM.

Renesas Electronics Corporation is a Japanese semiconductor manufacturer headquartered in Tokyo, Japan, initially incorporated in 2002 as Renesas Technology, the consolidated entity of the semiconductor units of Hitachi and Mitsubishi excluding their dynamic random-access memory (DRAM) businesses, to which NEC Electronics merged in 2010, resulting in a minor change in the corporate name and logo to as it is now.

<span class="mw-page-title-main">Micron Technology</span> American company producing semiconductor devices

Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products, including the Ballistix line of memory modules, are marketed under the Crucial brand. Micron and Intel together created IM Flash Technologies, which produced NAND flash memory. It owned Lexar between 2006 and 2017.

Rambus Inc. is an American technology company that designs, develops and licenses chip interface technologies and architectures that are used in digital electronics products. The company, founded in 1990, is well known for inventing RDRAM and for its intellectual property-based litigation following the introduction of DDR-SDRAM memory.

Silvaco Group, Inc., develops and markets electronic design automation (EDA) and technology CAD (TCAD) software and semiconductor design IP (SIP). The company is headquartered in Santa Clara, California, and has offices in North America, Europe, and throughout Asia. Founded in 1984, Silvaco is a privately held EDA company. The company has been known by at least two other names: Silvaco International, and Silvaco Data Systems.

<span class="mw-page-title-main">Microsystems International</span>

Microsystems International Limited (MIL) was a telecommunications microelectronics company based in Ottawa, Ontario, Canada, founded in 1969. MIL was an early attempt to create a merchant semiconductor house by Nortel Networks.

Teradyne, Inc., is an American automatic test equipment (ATE) designer and manufacturer based in North Reading, Massachusetts. Teradyne's high-profile customers include Samsung, Qualcomm, Intel, Analog Devices, Texas Instruments and IBM.

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.

VLSI Technology, Inc., was an American company that designed and manufactured custom and semi-custom integrated circuits (ICs). The company was based in Silicon Valley, with headquarters at 1109 McKay Drive in San Jose. Along with LSI Logic, VLSI Technology defined the leading edge of the application-specific integrated circuit (ASIC) business, which accelerated the push of powerful embedded systems into affordable products.

Microchip Technology Incorporated is a publicly listed American corporation that manufactures microcontroller, mixed-signal, analog, and Flash-IP integrated circuits. Its products include microcontrollers, Serial EEPROM devices, Serial SRAM devices, embedded security devices, radio frequency (RF) devices, thermal, power and battery management analog devices, as well as linear, interface and wireless products.

<span class="mw-page-title-main">GDDR5 SDRAM</span> Type of high performance DRAM graphics card memory

Graphics Double Data Rate 5 Synchronous Dynamic Random-Access Memory is a type of synchronous graphics random-access memory (SGRAM) with a high bandwidth interface designed for use in graphics cards, game consoles, and high-performance computing. It is a type of GDDR SDRAM.

Micron Memory Japan, K.K.(Japanese: マイクロンメモリジャパン株式会社, Micron Memory Japan Kabushiki-gaisha ) is a Japanese subsidiary of Micron Technology. It was formerly known as Elpida Memory, Inc. established in 1999 that developed, designed, manufactured and sold dynamic random-access memory (DRAM) products. It was also a semiconductor foundry. With headquarters in Yaesu, Chūō, Tokyo, Japan, it was initially formed under the name NEC Hitachi Memory in 1999 by the merger of the Hitachi and NEC DRAM businesses. In the following year it took on the name Elpida. In 2003, Elpida took over the Mitsubishi DRAM business. In 2004, it listed its shares in the first section of the Tokyo Stock Exchange. In 2012, those shares were delisted as a result of its bankruptcy. In 2013, Elpida was acquired by Micron Technology. On February 28, 2014, Elpida changed its name to Micron Memory Japan and Elpida Akita changed its name to Micron Akita, Inc.

<span class="mw-page-title-main">Random-access memory</span> Form of computer data storage

Random-access memory is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

WiLAN is a technology development and intellectual property licensing company with headquarters in Ottawa, Ontario, Canada. In addition to collaborating with other patent portfolio owners, WiLan licenses its own portfolio of patents. Modern wireless communication methods are continuously researched and developed by WiLAN Labs. A publicly traded company on the Toronto Stock Exchange, Quarterhill Inc.'s principal subsidiary is WiLAN..

<span class="mw-page-title-main">High Bandwidth Memory</span> Type of memory used on processors that require high transfer rate memory

High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix. It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers. The first HBM memory chip was produced by SK Hynix in 2013, and the first devices to use HBM were the AMD Fiji GPUs in 2015.

<span class="mw-page-title-main">James Skippen</span>

James (Jim) Skippen is a Canadian executive, lawyer, vice chairman of Quarterhill's board of directors, and former president and CEO of Canadian patent monetization firm, WiLAN. Skippen has over two decades of experience in intellectual property and patent licensing. Since 2006, Skippen's leadership at WiLAN has been credited in helping reshape the firm's focus from technology research and development to patent licensing monetization.

ChangXin Memory Technologies is a Chinese semiconductor integrated device manufacturer headquartered in Hefei, Anhui, specializing in the production of DRAM memory.

Formfactor, Inc. is a provider of test and measurement technologies for integrated circuits, with its headquarters in Livermore, California. It provides semiconductor companies with products to improve device performance and provide test and measurement technologies for integrated circuits.