Russell Dupuis

Last updated
Russell Dean Dupuis
Born1947 (age 7677)
NationalityAmerican
Awards IEEE Edison Medal (2007)
Scientific career
Fields Electrical engineering
Doctoral advisor Nick Holonyak Jr.

Russell Dean Dupuis (born 9 July 1947) is an American electrical engineer and physicist.

Contents

He holds the Steve W. Chaddick Endowed Chair in Electro-Optics in the School of Electrical and Computer Engineering at Georgia Tech. He has made pioneering contributions to metalorganic chemical vapor deposition (MOCVD) and continuous-wave room-temperature quantum-well lasers. [1] His other work has focused on III-V heterojunction devices, and LEDs.

Dupuis was elected as a member into the National Academy of Engineering in 1989 for pioneering work in metalorganic chemical vapor deposition and demonstration of heterostructure devices.

Education

Dupuis earned his B.S. (1970), his M.S. (1971), and his Ph.D. (1972) in Electrical Engineering from the University of Illinois at Urbana–Champaign. [1]

Career history

Prof. Dupuis initially worked at Texas Instruments from 1973 to 1975. He joined Rockwell International in 1975, where with P. Dan Dapkus, he was the first to demonstrate that MOCVD could be used for the growth of high-quality semiconductor thin films and devices such as lasers. Then in 1979 he moved to AT&T Bell Laboratories in Murray Hill, NJ where with Ralph Logn, C.J. Pinzone & Jan van der Ziel, he was the first to demonstrate the direct growth of GaAs lasers directly on silicon that could operate CW at room temperature. He extended his work to the growth of InP-InGaAsP by MOCVD and demonstrated the first long wavelength VCSEL to operate at 1.55 micron wavelength. He moved to academia in 1989 to become a chaired professor at the University of Texas at Austin at the Microelectronics Center established by Ben G Streetman.

Awards and memberships

A Georgia Research Alliance Eminent Scholar, Dupuis and two of his colleagues were awarded the 2002 National Medal of Technology by President George W. Bush for their work on developing and commercializing LEDs. [2] He won the 1985 IEEE Morris N. Liebmann Memorial Award. In 2015, Dupuis and four others shared the Charles Stark Draper Prize in Engineering given by the U.S. National Academy of Engineering. [3] He is a member of the National Academy of Engineering and is a Fellow of the IEEE, the American Physical Society, the American Association for the Advancement of Science, and the Optical Society of America.

Russell D. Dupuis won the 2004 John Bardeen Award [4] and the 2007 IEEE Edison Medal. [1] [5]

Related Research Articles

<span class="mw-page-title-main">Nick Holonyak</span> American engineer (1928–2022)

Nick Holonyak Jr. was an American engineer and educator. He is noted particularly for his 1962 invention and first demonstration of a semiconductor laser diode that emitted visible light. This device was the forerunner of the first generation of commercial light-emitting diodes (LEDs). He was then working at a General Electric research laboratory near Syracuse, New York. He left General Electric in 1963 and returned to his alma mater, the University of Illinois at Urbana-Champaign, where he later became John Bardeen Endowed Chair in Electrical and Computer Engineering and Physics.

<span class="mw-page-title-main">Eli Yablonovitch</span> American physicist

Eli Yablonovitch is an American physicist and engineer who, along with Sajeev John, founded the field of photonic crystals in 1987. He and his team were the first to create a 3-dimensional structure that exhibited a full photonic bandgap, which has been named Yablonovite. In addition to pioneering photonic crystals, he was the first to recognize that a strained quantum-well laser has a significantly reduced threshold current compared to its unstrained counterpart. This is now employed in the majority of semiconductor lasers fabricated throughout the world. His seminal paper reporting inhibited spontaneous emission in photonic crystals is among the most highly cited papers in physics and engineering.

<span class="mw-page-title-main">Metalorganic vapour-phase epitaxy</span> Method of producing thin films (polycrystalline and single crystal)

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures. As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes, its most widespread application. It was first demonstrated in 1967 at North American Aviation Autonetics Division in Anaheim CA by Harold M. Manasevit.

Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term CBE is often used interchangeably with metal-organic molecular beam epitaxy (MOMBE). The nomenclature does differentiate between the two processes, however. When used in the strictest sense, CBE refers to the technique in which both components are obtained from gaseous sources, while MOMBE refers to the technique in which the group III component is obtained from a gaseous source and the group V component from a solid source.

Alfred Yi Cho is a Chinese-American electrical engineer, inventor, and optical engineer. He is the Adjunct Vice President of Semiconductor Research at Alcatel-Lucent's Bell Labs. He is known as the "father of molecular beam epitaxy"; a technique he developed at that facility in the late 1960s. He is also the co-inventor, with Federico Capasso of quantum cascade lasers at Bell Labs in 1994.

Federico Capasso is an applied physicist and is one of the inventors of the quantum cascade laser during his work at Bell Laboratories. He is currently on the faculty of Harvard University.

<span class="mw-page-title-main">Jun-ichi Nishizawa</span> Japanese physicist (1926–2018)

Jun-ichi Nishizawa was a Japanese engineer and inventor. He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor, static induction thyristor, SIT/SITh. His inventions contributed to the development of internet technology and the information age.

Ekmel Özbay is a Turkish professor of Electrical and Electronics Engineering and Physics Departments at Bilkent University and the director of the Nanotechnology Research Center, and Space Technologies Research Center (BILUZAY) in Ankara.

<span class="mw-page-title-main">Isamu Akasaki</span> Japanese engineer (1929–2021)

Isamu Akasaki was a Japanese engineer and physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.

Dr. Harold M. Manasevit (1927–2008) was an American materials scientist.

A quantum-well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that are able to emit light efficiently. The wavelength of the light emitted by a quantum-well laser is determined by the width of the active region rather than just the bandgap of the materials from which it is constructed. This means that much shorter wavelengths can be obtained from quantum-well lasers than from conventional laser diodes using a particular semiconductor material. The efficiency of a quantum-well laser is also greater than a conventional laser diode due to the stepwise form of its density of states function.

The IEEE Robert N. Noyce Medal is a science award presented by the IEEE for outstanding contributions to the microelectronics industry. It is given to individuals who have demonstrated contributions in multiple areas including technology development, business development, industry leadership, development of technology policy, and standards development. The medal is named in honour of Robert N. Noyce, the co-founder of Intel Corporation. He was also renowned for his 1959 invention of the integrated circuit. The medal is funded by Intel Corporation and was first awarded in 2000.

Crosslight Software Inc. is an international company headquartered in greater Vancouver, British Columbia, Canada. Officially spun off from the National Research Council of Canada (NRC) in 1995, it provides Technology Computer Aided Design (TCAD) tools for semiconductor device and process simulations.

IQE PLC is a British semiconductor company founded 1988 in Cardiff, Wales, which manufactures advanced epitaxial wafers for a wide range of technology applications for wireless, optoelectronic, electronic and solar devices. IQE specialises in advanced silicon and compound semiconductor materials based on gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN) and silicon. The company is the largest independent outsource producer of epiwafers manufactured by metalorganic vapour phase epitaxy (MOCVD), molecular beam epitaxy (MBE) and chemical vapor deposition (CVD).

M. George Craford is an American electrical engineer known for his work in Light Emitting Diodes (LEDs).

Manijeh Razeghi is an Iranian-American scientist in the fields of semiconductors and optoelectronic devices. She is a pioneer in modern epitaxial techniques for semiconductors such as low pressure metalorganic chemical vapor deposition (MOCVD), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), GasMBE, and MOMBE. These techniques have enabled the development of semiconductor devices and quantum structures with higher composition consistency and reliability, leading to major advancement in InP and GaAs based quantum photonics and electronic devices, which were at the core of the late 20th century optical fiber telecommunications and early information technology.

James J. Coleman is an electrical engineer who worked at Bell Labs, Rockwell International, and the University of Illinois, Urbana. He is best known for his work on semiconductor lasers, materials and devices including strained-layer indium gallium arsenide lasers and selective area epitaxy. Coleman is a Fellow of the IEEE and a member of the US National Academy of Engineering.

<span class="mw-page-title-main">Aristos Christou</span> American engineer

Aristos Christou is an American engineer and scientist, academic professor and researcher. He is a Professor of Materials Science, Professor of Mechanical Engineering and Professor of Reliability Engineering at the University of Maryland.

Xiuling Li is a distinguished electrical and computer engineering professor in the field of nanostructured semiconductor devices. She is currently the Temple Foundation Endowed Professorship No. 3 in Electrical and Computer Engineering and Fellow of the Dow Professor in Chemistry at the University of Texas at Austin. Previously, she was a Donald Biggar Willet Professor in Electrical and Computer Engineering and Interim Director of the Nick Holonyak Jr. Micro and Nanotechnology Laboratory at the University of Illinois at Urbana-Champaign.

Joan M. Redwing is an American materials scientist known for research on electronic and optoelectronic materials, including the processing of semiconductor thin films and nanomaterials by metalorganic chemical vapor deposition (MOCVD). Redwing is a distinguished professor of materials science and engineering and electrical engineering at Pennsylvania State University and director of the university's 2D Crystal Consortium research facility. She is a fellow of the American Association for the Advancement of Science, the American Physical Society, and the Materials Research Society.

References

  1. 1 2 3 "Russell D. Dupuis". IEEE. 13 September 2017.
  2. "President Bush Awards Georgia Tech Professor with National Medal of Technology". Georgia Institute of Technology. 2003-11-07. Archived from the original on 2006-09-05.
  3. "Professor Russell Dupuis".
  4. "Russell D. Dupuis 2004 John Bardeen Award Winner". IEEE LEOS Newsletter, Volume 17 Number 6. December 2003.
  5. "Dupuis to be Awarded IEEE Edison Award". Georgia Institute of Technology. 2007-03-07. Archived from the original on 2007-03-16.