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A crystallographic defect is an interruption of the regular patterns of arrangement of atoms or molecules in crystalline solids. The positions and orientations of particles, which are repeating at fixed distances determined by the unit cell parameters in crystals, exhibit a periodic crystal structure, but this is usually imperfect. Several types of defects are often characterized: point defects, line defects, planar defects, bulk defects. Topological homotopy establishes a mathematical method of characterization.
An F center or Farbe center is a type of crystallographic defect in which an anionic vacancy in a crystal lattice is occupied by one or more unpaired electrons. Electrons in such a vacancy in a crystal lattice tend to absorb light in the visible spectrum such that a material that is usually transparent becomes colored. The greater the number of F centers, the more intense the color of the compound. F centers are a type of color center.
In chemistry, a dangling bond is an unsatisfied valence on an immobilized atom. An atom with a dangling bond is also referred to as an immobilized free radical or an immobilized radical, a reference to its structural and chemical similarity to a free radical.
Imperfections in the crystal lattice of diamond are common. Such defects may be the result of lattice irregularities or extrinsic substitutional or interstitial impurities, introduced during or after the diamond growth. The defects affect the material properties of diamond and determine to which type a diamond is assigned; the most dramatic effects are on the diamond color and electrical conductivity, as explained by the electronic band structure.
Silicon (14Si) has 23 known isotopes, with mass numbers ranging from 22 to 44. 28Si, 29Si (4.67%), and 30Si (3.1%) are stable. The longest-lived radioisotope is 32Si, which is produced by cosmic ray spallation of argon. Its half-life has been determined to be approximately 150 years, and it decays by beta emission to 32P and then to 32S. After 32Si, 31Si has the second longest half-life at 157.3 minutes. All others have half-lives under 7 seconds.
This page deals with the electron affinity as a property of isolated atoms or molecules. Solid state electron affinities are not listed here.
In materials science, an interstitial defect is a type of point crystallographic defect where an atom of the same or of a different type, occupies an interstitial site in the crystal structure. When the atom is of the same type as those already present they are known as a self-interstitial defect. Alternatively, small atoms in some crystals may occupy interstitial sites, such as hydrogen in palladium. Interstitials can be produced by bombarding a crystal with elementary particles having energy above the displacement threshold for that crystal, but they may also exist in small concentrations in thermodynamic equilibrium. The presence of interstitial defects can modify the physical and chemical properties of a material.
The nitrogen-vacancy center is one of numerous photoluminescent point defects in diamond. Its most explored and useful properties include its spin-dependent photoluminescence, and its relatively long (millisecond) spin coherence at room temperature. The NV center energy levels are modified by magnetic fields, electric fields, temperature, and strain, which allow it to serve as a sensor of a variety of physical phenomena. Its atomic size and spin properties can form the basis for useful quantum sensors. It has also been explored for applications in quantum computing and spintronics.
In condensed-matter physics, a collision cascade is a set of nearby adjacent energetic collisions of atoms induced by an energetic particle in a solid or liquid.
In materials science, the threshold displacement energy is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its site in the lattice to a defect position. It is also known as "displacement threshold energy" or just "displacement energy". In a crystal, a separate threshold displacement energy exists for each crystallographic direction. Then one should distinguish between the minimum and average over all lattice directions' threshold displacement energies. In amorphous solids, it may be possible to define an effective displacement energy to describe some other average quantity of interest. Threshold displacement energies in typical solids are of the order of 10-50 eV.
Electrically detected magnetic resonance (EDMR) is a materials characterisation technique that improves upon electron spin resonance. It involves measuring the change in electrical resistance of a sample when exposed to certain microwave frequencies. It can be used to identify very small numbers of impurities in semiconductors.
Silicene is a two-dimensional allotrope of silicon, with a hexagonal honeycomb structure similar to that of graphene. Contrary to graphene, silicene is not flat, but has a periodically buckled topology; the coupling between layers in silicene is much stronger than in multilayered graphene; and the oxidized form of silicene, 2D silica, has a very different chemical structure from graphene oxide.
Hughes–Drever experiments are spectroscopic tests of the isotropy of mass and space. Although originally conceived of as a test of Mach's principle, they are now understood to be an important test of Lorentz invariance. As in Michelson–Morley experiments, the existence of a preferred frame of reference or other deviations from Lorentz invariance can be tested, which also affects the validity of the equivalence principle. Thus these experiments concern fundamental aspects of both special and general relativity. Unlike Michelson–Morley type experiments, Hughes–Drever experiments test the isotropy of the interactions of matter itself, that is, of protons, neutrons, and electrons. The accuracy achieved makes this kind of experiment one of the most accurate confirmations of relativity .
Double ionization is a process of formation of doubly charged ions when laser radiation is exerted on neutral atoms or molecules. Double ionization is usually less probable than single-electron ionization. Two types of double ionization are distinguished: sequential and non-sequential.
Electric dipole spin resonance (EDSR) is a method to control the magnetic moments inside a material using quantum mechanical effects like the spin–orbit interaction. Mainly, EDSR allows to flip the orientation of the magnetic moments through the use of electromagnetic radiation at resonant frequencies. EDSR was first proposed by Emmanuel Rashba.
Kenneth John Button was a solid-state and plasma physicist. He was the editor-in-chief of the International Journal of Infrared and Millimeter Waves from its inception in 1980 until his resignation in 2004.
A trivalent group 14 radical (also known as a trivalent tetrel radical) is a molecule that contains a group 14 element (E = C, Si, Ge, Sn, Pb) with three bonds and a free radical, having the general formula of R3E•. Such compounds can be categorized into three different types, depending on the structure (or equivalently the orbital in which the unpaired electron resides) and the energetic barrier to inversion. A molecule that remains rigidly in a pyramidal structure has an electron in a sp3 orbital is denoted as Type A. A structure that is pyramidal, but flexible, is denoted as Type B. And a planar structure with an electron that typically would reside in a pure p orbital is denoted as Type C. The structure of such molecules has been determined by probing the nature of the orbital that the unpaired electron resides in using spectroscopy, as well as directly with X-ray methods. Trivalent tetrel radicals tend to be synthesized from their tetravalent counterparts (i.e. R3EY where Y is a species that will dissociate).
Arthur Frederic Kip was an American experimental physicist, specializing in solid-state physics. He was a Guggenheim Fellow for the academic year 1958–1959.
Silicon carbide color centers are point defects in the crystal lattice of silicon carbide, which are known as color centers. These color centers have multiple uses, some of which are in photonics, semiconductors, and quantum applications like metrology and quantum communication. Defects in materials have a plethora of applications, but the reason defects, or color centers in silicon carbide are significant is due to many important properties of these color centers. Silicon carbide as a material has second-order nonlinearity, as well as optical transparency and low two-photon absorption. This makes silicon carbide viable to be an alternate platform for many things, including but not limited to nanofabrication, integrated quantum photonics, and quantum systems in large-scale wafers.
The T centre is a radiation damage centre in silicon composed of a carbon-carbon pair (C-C) sharing a substitutional site of the silicon lattice. Additionally, one of the substitutional carbon atoms is bonded with a hydrogen atom while the other carbon contains an unpaired electron in the ground state of a dangling bond. Much like the nitrogen-vacancy centres in diamond, the T centre contains spin-dependent optical transitions addressable through photoluminescence. These spin-dependent transitions, however, emit light within the technologically efficient telecommunication O-band. Consequentially, the T centre is an intriguing candidate for quantum information technologies with development of integrated quantum devices benefiting from techniques within the silicon photonic community.
References
- Watkins, G. D.; Corbett, J. W. (1961). "Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center". Physical Review . 121. doi:10.1103/PhysRev.121.1001.
- Watkins, G. D.; Corbett, J. W. (1961). "Defects in Irradiated Silicon. II. Infrared Absorption of the Si-A Center". Physical Review . 121. doi:10.1103/PhysRev.121.1015.
- Bemski, Feher; Gere, E. (1958). Business Meeting of the Division of Solid-State Physics: Spin Resonance in Electron Irradiated Silicon. Bulletin of the American Physical Society. II. Vol. 3. p. 135.
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