A crystal or crystalline solid is a solid material whose constituents are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions. In addition, macroscopic single crystals are usually identifiable by their geometrical shape, consisting of flat faces with specific, characteristic orientations. The scientific study of crystals and crystal formation is known as crystallography. The process of crystal formation via mechanisms of crystal growth is called crystallization or solidification.
A crystallographic defect is an interruption of the regular patterns of arrangement of atoms or molecules in crystalline solids. The positions and orientations of particles, which are repeating at fixed distances determined by the unit cell parameters in crystals, exhibit a periodic crystal structure, but this is usually imperfect. Several types of defects are often characterized: point defects, line defects, planar defects, bulk defects. Topological homotopy establishes a mathematical method of characterization.
In crystallography, crystal structure is a description of the ordered arrangement of atoms, ions, or molecules in a crystalline material. Ordered structures occur from the intrinsic nature of the constituent particles to form symmetric patterns that repeat along the principal directions of three-dimensional space in matter.
Thermoelectric materials show the thermoelectric effect in a strong or convenient form.
In materials science, creep is the tendency of a solid material to undergo slow deformation while subject to persistent mechanical stresses. It can occur as a result of long-term exposure to high levels of stress that are still below the yield strength of the material. Creep is more severe in materials that are subjected to heat for long periods and generally increases as they near their melting point.
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to slide over each other at low stress levels and is known as glide or slip. The crystalline order is restored on either side of a glide dislocation but the atoms on one side have moved by one position. The crystalline order is not fully restored with a partial dislocation. A dislocation defines the boundary between slipped and unslipped regions of material and as a result, must either form a complete loop, intersect other dislocations or defects, or extend to the edges of the crystal. A dislocation can be characterised by the distance and direction of movement it causes to atoms which is defined by the Burgers vector. Plastic deformation of a material occurs by the creation and movement of many dislocations. The number and arrangement of dislocations influences many of the properties of materials.
Atomic diffusion is a diffusion process whereby the random thermally-activated movement of atoms in a solid results in the net transport of atoms. For example, helium atoms inside a balloon can diffuse through the wall of the balloon and escape, resulting in the balloon slowly deflating. Other air molecules have lower mobilities and thus diffuse more slowly through the balloon wall. There is a concentration gradient in the balloon wall, because the balloon was initially filled with helium, and thus there is plenty of helium on the inside, but there is relatively little helium on the outside. The rate of transport is governed by the diffusivity and the concentration gradient.
Kröger–Vink notation is a set of conventions that are used to describe electric charges and lattice positions of point defect species in crystals. It is primarily used for ionic crystals and is particularly useful for describing various defect reactions. It was proposed by F. A. Kröger and H. J. Vink.
Diffusion creep refers to the deformation of crystalline solids by the diffusion of vacancies through their crystal lattice. Diffusion creep results in plastic deformation rather than brittle failure of the material.
In materials science, an interstitial defect is a type of point crystallographic defect where an atom of the same or of a different type, occupies an interstitial site in the crystal structure. When the atom is of the same type as those already present they are known as a self-interstitial defect. Alternatively, small atoms in some crystals may occupy interstitial sites, such as hydrogen in palladium. Interstitials can be produced by bombarding a crystal with elementary particles having energy above the displacement threshold for that crystal, but they may also exist in small concentrations in thermodynamic equilibrium. The presence of interstitial defects can modify the physical and chemical properties of a material.
A deformation mechanism, in geology, is a process occurring at a microscopic scale that is responsible for changes in a material's internal structure, shape and volume. The process involves planar discontinuity and/or displacement of atoms from their original position within a crystal lattice structure. These small changes are preserved in various microstructures of materials such as rocks, metals and plastics, and can be studied in depth using optical or digital microscopy.
In materials science, segregation is the enrichment of atoms, ions, or molecules at a microscopic region in a materials system. While the terms segregation and adsorption are essentially synonymous, in practice, segregation is often used to describe the partitioning of molecular constituents to defects from solid solutions, whereas adsorption is generally used to describe such partitioning from liquids and gases to surfaces. The molecular-level segregation discussed in this article is distinct from other types of materials phenomena that are often called segregation, such as particle segregation in granular materials, and phase separation or precipitation, wherein molecules are segregated in to macroscopic regions of different compositions. Segregation has many practical consequences, ranging from the formation of soap bubbles, to microstructural engineering in materials science, to the stabilization of colloidal suspensions.
Melting-point depression is the phenomenon of reduction of the melting point of a material with reduction of its size. This phenomenon is very prominent in nanoscale materials, which melt at temperatures hundreds of degrees lower than bulk materials.
In chemistry, the Terrace Ledge Kink model (TLK), which is also referred to as the Terrace Step Kink model (TSK), describes the thermodynamics of crystal surface formation and transformation, as well as the energetics of surface defect formation. It is based upon the idea that the energy of an atom’s position on a crystal surface is determined by its bonding to neighboring atoms and that transitions simply involve the counting of broken and formed bonds. The TLK model can be applied to surface science topics such as crystal growth, surface diffusion, roughening, and vaporization.
Dislocation creep is a deformation mechanism in crystalline materials. Dislocation creep involves the movement of dislocations through the crystal lattice of the material, in contrast to diffusion creep, in which diffusion is the dominant creep mechanism. It causes plastic deformation of the individual crystals, and thus the material itself.
In materials science, the threshold displacement energy is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its site in the lattice to a defect position. It is also known as "displacement threshold energy" or just "displacement energy". In a crystal, a separate threshold displacement energy exists for each crystallographic direction. Then one should distinguish between the minimum and average over all lattice directions' threshold displacement energies. In amorphous solids, it may be possible to define an effective displacement energy to describe some other average quantity of interest. Threshold displacement energies in typical solids are of the order of 10-50 eV.
Lattice diffusion refers to atomic diffusion within a crystalline lattice. Diffusion within the crystal lattice occurs by either interstitial or substitutional mechanisms and is referred to as lattice diffusion. In interstitial lattice diffusion, a diffusant, will diffuse in between the lattice structure of another crystalline element. In substitutional lattice diffusion, the atom can only move by substituting place with another atom. Substitutional lattice diffusion is often contingent upon the availability of point vacancies throughout the crystal lattice. Diffusing particles migrate from point vacancy to point vacancy by the rapid, essentially random jumping about. Since the prevalence of point vacancies increases in accordance with the Arrhenius equation, the rate of crystal solid state diffusion increases with temperature. For a single atom in a defect-free crystal, the movement can be described by the "random walk" model.
The strength of metal oxide adhesion effectively determines the wetting of the metal-oxide interface. The strength of this adhesion is important, for instance, in production of light bulbs and fiber-matrix composites that depend on the optimization of wetting to create metal-ceramic interfaces. The strength of adhesion also determines the extent of dispersion on catalytically active metal. Metal oxide adhesion is important for applications such as complementary metal oxide semiconductor devices. These devices make possible the high packing densities of modern integrated circuits.
Nabarro–Herring creep is a mode of deformation of crystalline materials that occurs at low stresses and held at elevated temperatures in fine-grained materials. In Nabarro–Herring creep, atoms diffuse through the crystals, and the creep rate varies inversely with the square of the grain size so fine-grained materials creep faster than coarser-grained ones. NH creep is solely controlled by diffusional mass transport. This type of creep results from the diffusion of vacancies from regions of high chemical potential at grain boundaries subjected to normal tensile stresses to regions of lower chemical potential where the average tensile stresses across the grain boundaries are zero. Self-diffusion within the grains of a polycrystalline solid can cause the solid to yield to an applied shearing stress, the yielding being caused by a diffusional flow of matter within each crystal grain away from boundaries where there is a normal pressure and toward those where there is a normal tension. Atoms migrating in the opposite direction account for the creep strain. The creep strain rate is derived in the next section. NH creep is more important in ceramics than metals as dislocation motion is more difficult to effect in ceramics.
