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A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Herbert Kroemer was a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer was professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor. His research into transistors was a stepping stone to the later development of mobile phone technologies.
Robert Heath Dennard was an American electrical engineer and inventor.
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control.
A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate. The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain. The introduction of the transistor is often considered one of the most important inventions in history.
Fujio Masuoka is a Japanese engineer, who has worked for Toshiba and Tohoku University, and is currently chief technical officer (CTO) of Unisantis Electronics. He is best known as the inventor of flash memory, including the development of both the NOR flash and NAND flash types in the 1980s. He also invented the first gate-all-around (GAA) MOSFET (GAAFET) transistor, an early non-planar 3D transistor, in 1988.
Robert William Bower was an American applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: engineer, scientist, professor at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the president of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET, or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California.
The current injection technique is a technique developed to reduce the turn-OFF switching transient of power bipolar semiconductor devices. It was developed and published by Dr S. Eio of Staffordshire University in 2007.
Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
Mohamed M. Atalla was an Egyptian-American engineer, physicist, cryptographer, inventor and entrepreneur. He was a semiconductor pioneer who made important contributions to modern electronics. He is best known for inventing, along with his colleague Dawon Kahng, the MOSFET in 1959, which along with Atalla's earlier surface passivation processes, had a significant impact on the development of the electronics industry. He is also known as the founder of the data security company Atalla Corporation, founded in 1972. He received the Stuart Ballantine Medal and was inducted into the National Inventors Hall of Fame for his important contributions to semiconductor technology as well as data security.
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
Roger John Malik is a physicist, engineer and inventor.
Chen Xingbi was a Chinese electronics engineer and professor at the University of Electronic Science and Technology of China. Known for his invention of superjunction power semiconductor devices, he was elected an academician of the Chinese Academy of Sciences and a life fellow of the Institute of Electrical and Electronics Engineers (IEEE). He was inducted into IEEE's ISPSD Hall of Fame in 2019.
C. Frank Wheatley Jr. was an electrical engineer responsible for a number of innovations within the semiconductor industry, including the patent of the insulated-gate bipolar transistor (IGBT). His work within the semiconductor industry garnered him a variety of awards, including his induction into the New Jersey Inventors Hall of Fame and election as an IEEE Fellow.
Paul Richman is an American semiconductor physicist and author.
Yuan Taur is a Chinese American electrical engineer and an academic. He is a Distinguished Professor of Electrical and Computer Engineering (ECE) at the University of California, San Diego.
References
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technological innovations for a better life. The winning innovations are globally accessible and are based upon ethically sound academic and scientific research.
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- 1 2 Desikan, Shubashree (21 August 2016). "Man with a huge 'negative' carbon footprint". The Hindu. Retrieved 16 January 2017.
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- ↑ Zorpette, Glenn (1997). Rennie, John (ed.). "Fifty Years of Heroes and Epiphanies". Scientific American . 8 (1): 7. ISSN 1048-0943 . Retrieved 16 January 2017.
And it may not be too soon to identify a few new candidates for hero status—people such as the quantum-well wizard Federico Capasso of Lucent Technologies (which includes Bell Labs) and B. Jayant Baliga, the inventor of the IGBT, who describes his transistor in this issue
- ↑ President Obama Honors Nation’s Top Scientists and Innovators, 27 September 2011, The White House, Office of the Press Secretary, whitehouse.gov
- ↑ "IEEE 2014 Medals and Awards Recipients". IEEE. Archived from the original on 24 February 2014. Retrieved 14 February 2014.
- ↑ "2015". Global Energy Association. Retrieved 16 January 2017.
- ↑ Allen, Frederick E. (6 May 2016). "The Man With The World's Largest Negative Carbon Footprint And 15 Other Geniuses Honored". Forbes . Retrieved 16 January 2017.
- ↑ "IIT Madras 53rd Convocation". Archived from the original on 26 December 2016. Retrieved 21 July 2016.
- ↑ Li, Yunqi (4 September 2024). "This semiconductor transistor is the hidden technology that offsets 82 gigatons of CO2". Wired. Retrieved 17 September 2024.
