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A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.
Jack St. Clair Kilby was an American electrical engineer who took part, along with Robert Noyce of Fairchild Semiconductor, in the realization of the first integrated circuit while working at Texas Instruments (TI) in 1958. He was awarded the Nobel Prize in Physics on 10 December 2000.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Harold Stephen Black was an American electrical engineer, who revolutionized the field of applied electronics by inventing the negative feedback amplifier in 1927. To some, his invention is considered the most important breakthrough of the twentieth century in the field of electronics, since it has a wide area of application. This is because all electronic devices are inherently nonlinear, but they can be made substantially linear with the application of negative feedback. Negative feedback works by sacrificing gain for higher linearity. By sacrificing gain, it also has an additional effect of increasing the bandwidth of the amplifier. However, a negative feedback amplifier can be unstable such that it may oscillate. Once the stability problem is solved, the negative feedback amplifier is extremely useful in the field of electronics. Black published a famous paper, Stabilized feedback amplifiers, in 1934.
Herbert Kroemer was a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer was professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor. His research into transistors was a stepping stone to the later development of mobile phone technologies.
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control.
This article details the history of electrical engineering. The first substantial practical use of electricity was electromagnetism.
The J. J. Ebers Award was established in 1971 to foster progress in electron devices. It commemorates Jewell James Ebers, whose contributions, particularly to transistors, shaped the understanding and technology of electron devices. It is presented annually to one or more individuals who have made either a single or a series of contributions of recognized scientific, economic, or social significance in the broad field of electron devices. The recipient is awarded a certificate and check for $5,000, presented at the International Electron Devices Meeting.
Fujio Masuoka is a Japanese engineer, who has worked for Toshiba and Tohoku University, and is currently chief technical officer (CTO) of Unisantis Electronics. He is best known as the inventor of flash memory, including the development of both the NOR flash and NAND flash types in the 1980s. He also invented the first gate-all-around (GAA) MOSFET (GAAFET) transistor, an early non-planar 3D transistor, in 1988.
John G. Linvill was an American professor (emeritus) of Electrical engineering at Stanford University, known for his pioneering work in higher education, integrated circuits and semiconductors, and for development of the Optacon reading machine for the blind.
Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
Mohamed M. Atalla was an Egyptian-American engineer, physicist, cryptographer, inventor and entrepreneur. He was a semiconductor pioneer who made important contributions to modern electronics. He is best known for inventing the MOSFET in 1959, which along with Atalla's earlier surface passivation processes, had a significant impact on the development of the electronics industry. He is also known as the founder of the data security company Atalla Corporation, founded in 1972. He received the Stuart Ballantine Medal and was inducted into the National Inventors Hall of Fame for his important contributions to semiconductor technology as well as data security.
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.
Dr. Gary Patton is an American technologist and business executive. He is currently the Corporate Vice President and General Manager of Design Enablement and Components Research in the Technology Development Group at Intel. He has spent most of his career in IBM, starting in IBM's Research Division and holding management and executive positions in IBM's Microelectronics Division in Technology Development, Design Enablement, Manufacturing, and Business Line Management.
Chen Xingbi was a Chinese electronics engineer and professor at the University of Electronic Science and Technology of China. Known for his invention of superjunction power semiconductor devices, he was elected an academician of the Chinese Academy of Sciences and a life fellow of the Institute of Electrical and Electronics Engineers (IEEE). He was inducted into IEEE's ISPSD Hall of Fame in 2019.
C. Frank Wheatley Jr. was an electrical engineer responsible for a number of innovations within the semiconductor industry, including the patent of the insulated-gate bipolar transistor (IGBT). His work within the semiconductor industry garnered him a variety of awards, including his induction into the New Jersey Inventors Hall of Fame and election as an IEEE Fellow.
Paul Richman is an American semiconductor physicist and author.
References
- 1 2 3 Edwards, John (22 November 2010). "B. Jayant Baliga: Designing The Insulated-Gate Bipolar Transistor". Electronic Design . Retrieved 16 January 2017.
- 1 2 "NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology". National Inventors Hall of Fame . Retrieved 17 August 2019.
- 1 2 3 Prasad, Shishir (25 February 2012). "Jayant Baliga's invention is a power saver". Forbes India . Retrieved 16 January 2017.
- ↑ "Oral-History:B. Jayant Baliga".
- 1 2 Desikan, Shubashree (21 August 2016). "Man with a huge 'negative' carbon footprint". The Hindu. Retrieved 16 January 2017.
- 1 2 Pulakkat, Hari (28 July 2016). "Meet Jayant Baliga - the inventor of IGBT who is working to kill his own invention". The Economic Times. Retrieved 16 January 2017.
- ↑ "Fellow Class of 1983". IEEE . Retrieved 25 January 2012.
- ↑ "IEEE Lamme Medal Recipients" (PDF). IEEE. Retrieved 25 January 2012.
- 1 2 "Dr. Jayant Baliga". North Carolina State University . Retrieved 16 January 2017.
- ↑ Zorpette, Glenn (1997). Rennie, John (ed.). "Fifty Years of Heroes and Epiphanies". Scientific American . 8 (1): 7. ISSN 1048-0943 . Retrieved 16 January 2017.
And it may not be too soon to identify a few new candidates for hero status—people such as the quantum-well wizard Federico Capasso of Lucent Technologies (which includes Bell Labs) and B. Jayant Baliga, the inventor of the IGBT, who describes his transistor in this issue
- ↑ President Obama Honors Nation’s Top Scientists and Innovators, 27 September 2011, The White House, Office of the Press Secretary, whitehouse.gov
- ↑ "IEEE 2014 Medals and Awards Recipients". IEEE. Archived from the original on 24 February 2014. Retrieved 14 February 2014.
- ↑ "2015". Global Energy Association. Retrieved 16 January 2017.
- ↑ Allen, Frederick E. (6 May 2016). "The Man With The World's Largest Negative Carbon Footprint And 15 Other Geniuses Honored". Forbes . Retrieved 16 January 2017.
- ↑ "IIT Madras 53rd Convocation". Archived from the original on 26 December 2016. Retrieved 21 July 2016.
