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Spintronics,also known as spin electronics,is the study of the intrinsic spin of the electron and its associated magnetic moment,in addition to its fundamental electronic charge,in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems;the analogous effects in insulators fall into the field of multiferroics.
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s,proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently,memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ),which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough,electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics,the tunnel magnetoresistance is a strictly quantum mechanical phenomenon,and lies in the study of spintronics.
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in multilayers composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR,which also sets the foundation for the study of spintronics.
Albert Fert is a French physicist and one of the discoverers of giant magnetoresistance which brought about a breakthrough in gigabyte hard disks. Currently,he is an emeritus professor at Paris-Saclay University in Orsay,scientific director of a joint laboratory between the Centre national de la recherche scientifique and Thales Group,and adjunct professor at Michigan State University. He was awarded the 2007 Nobel Prize in Physics together with Peter Grünberg.
Burkard Hillebrands is a German physicist and professor of physics. He is the leader of the magnetism research group in the Department of Physics at the Technische Universität Kaiserslautern.
Exchange bias or exchange anisotropy occurs in bilayers of magnetic materials where the hard magnetization behavior of an antiferromagnetic thin film causes a shift in the soft magnetization curve of a ferromagnetic film. The exchange bias phenomenon is of tremendous utility in magnetic recording,where it is used to pin the state of the readback heads of hard disk drives at exactly their point of maximum sensitivity;hence the term "bias."
Stuart Stephen Papworth Parkin is an experimental physicist,Managing Director at the Max Planck Institute of Microstructure Physics in Halle and an Alexander von Humboldt Professor at the Institute of Physics of the Martin-Luther-University Halle-Wittenberg.
Spin-transfer torque (STT) is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction or spin valve can be modified using a spin-polarized current.
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials,with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include:hybrid molecular/semiconductor electronics,one-dimensional nanotubes/nanowires or advanced molecular electronics.
Racetrack memory or domain-wall memory (DWM) is an experimental non-volatile memory device under development at IBM's Almaden Research Center by a team led by physicist Stuart Parkin. It is a current topic of active research at the Max Planck Institute of Microstructure Physics in Dr. Parkin's group. In early 2008,a 3-bit version was successfully demonstrated. If it were to be developed successfully,racetrack memory would offer storage density higher than comparable solid-state memory devices like flash memory.
Spinmechatronics is neologism referring to an emerging field of research concerned with the exploitation of spin-dependent phenomena and established spintronic methodologies and technologies in conjunction with electro-mechanical,magno-mechanical,acousto-mechanical and opto-mechanical systems. Most especially,spinmechatronics concerns the integration of micro- and nano- mechatronic systems with spin physics and spintronics.
Spin engineering describes the control and manipulation of quantum spin systems to develop devices and materials. This includes the use of the spin degrees of freedom as a probe for spin based phenomena. Because of the basic importance of quantum spin for physical and chemical processes,spin engineering is relevant for a wide range of scientific and technological applications. Current examples range from Bose–Einstein condensation to spin-based data storage and reading in state-of-the-art hard disk drives,as well as from powerful analytical tools like nuclear magnetic resonance spectroscopy and electron paramagnetic resonance spectroscopy to the development of magnetic molecules as qubits and magnetic nanoparticles. In addition,spin engineering exploits the functionality of spin to design materials with novel properties as well as to provide a better understanding and advanced applications of conventional material systems. Many chemical reactions are devised to create bulk materials or single molecules with well defined spin properties,such as a single-molecule magnet. The aim of this article is to provide an outline of fields of research and development where the focus is on the properties and applications of quantum spin.
Everspin Technologies,Inc. is a publicly traded semiconductor company headquartered in Chandler,Arizona,United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products,including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. It also licenses its technology for use in embedded MRAM (eMRAM) applications,magnetic sensor applications as well as performs backend foundry services for eMRAM.
Bruce Alvin Gurney was an American physicist responsible for pioneering advances in magnetic recording. In particular,he was central to the development of the giant magnetoresistance (GMR) sensors first used in hard disk drives in 1997.
Spinterface is a term coined to indicate an interface between a ferromagnet and an organic semiconductor. This is a widely investigated topic in molecular spintronics,since the role of interfaces plays a huge part in the functioning of a device. In particular,spinterfaces are widely studied in the scientific community because of their hybrid organic/inorganic composition. In fact,the hybridization between the metal and the organic material can be controlled by acting on the molecules,which are more responsive to electrical and optical stimuli than metals. This gives rise to the possibility of efficiently tuning the magnetic properties of the interface at the atomic scale.
Professor Lan Wang is a Chinese-Australian material scientist known for expertise in materials synthesis and advanced materials characterisation.
Robert E Fontana is an engineer,physicist,and author who is noted for his contributions in the areas of magnetic recording and data storage on hard disk drives (HDD) and on digital tape recorders. His work has concentrated on developing thin film processing techniques for nano-fabrication of magnetic devices including Giant Magnetoresistance read heads now used universally in magnetic recording. Much of his career was with IBM in San Jose,California. He is a Fellow of the Institute of Electrical and Electronics Engineers and a member of the National Academy of Engineering.
Manuel Bibes,born on July 15,1976,in Sainte-Foy-la-Grande,is a French physicist specializing in functional oxides,multiferroic materials,and spintronics. He is currently a Research Director at the National Center for Scientific Research (CNRS).
Tiffany Suzanne Santos is an American electrical engineer and materials scientist who works for the research division of Western Digital as an expert on tunnel magnetoresistance,non-volatile memory,and magnetic thin-film memory,and as Director of Non-Volatile Memory Materials Research.
References
- 1 2 "DIENY Bernard".
- ↑ "Bernard Dieny". scholar.google.ca.
- ↑ "Bernard Dieny's research works | SPINTEC, Grenoble and other places". ResearchGate.
- ↑ "Nanotech France 2018 International Nanotechnology Conference & Exhibition". www.setcor.org.
- ↑ "ORCID". orcid.org.
- ↑ "Introduction to Magnetic Random-Access Memory".
- ↑ Dieny, B.; Speriosu, V. S.; Metin, S.; Parkin, S. S. P.; Gurney, B. A.; Baumgart, P.; Wilhoit, D. R. (April 15, 1991). "Magnetotransport properties of magnetically soft spin-valve structures (invited)". Journal of Applied Physics. 69 (8): 4774–4779. Bibcode:1991JAP....69.4774D. doi:10.1063/1.348252.
- ↑ "GMR Heads oral history panel at the Computer History Museum". September 29, 2019.
- ↑ Dieny, B. (1992). "Quantitative Interpretation of Giant Magnetoresistance Properties of Permalloy-Based Spin-Valve Structures". Europhysics Letters. 17 (3): 261–267. Bibcode:1992EL.....17..261D. doi:10.1209/0295-5075/17/3/013. S2CID 250855305.
- ↑ Monsma, D. J.; Lodder, J. C.; Popma, Th. J. A.; Dieny, B. (June 26, 1995). "Perpendicular Hot Electron Spin-Valve Effect in a New Magnetic Field Sensor: The Spin-Valve Transistor" (PDF). Physical Review Letters. 74 (26): 5260–5263. Bibcode:1995PhRvL..74.5260M. doi:10.1103/PhysRevLett.74.5260. PMID 10058723 – via APS.
- ↑ "Crossover for in-plane to perpendicular anisotropy in Pt/CoFe/AlOx as a function of the Al degree of oxidation: a very accurate control of the oxidation of tunnel barrier".
- ↑ Dieny, B.; Chshiev, M. (June 28, 2017). "Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications". Reviews of Modern Physics. 89 (2): 025008. Bibcode:2017RvMP...89b5008D. doi:10.1103/RevModPhys.89.025008. S2CID 125438818 – via APS.
- ↑ Mejdoubi, A.; Prenat, G.; Dieny, B. (May 17, 2012). "A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer". 2012 28th International Conference on Microelectronics Proceedings (PDF). pp. 225–228. doi:10.1109/MIEL.2012.6222840. ISBN 978-1-4673-0238-8. S2CID 36177921 – via IEEE Xplore.
- ↑ "Bernard Dieny - Developing multifunctional magneto electronic integrated circuits particularly suitable for the Internet of Objects (Magical)". CEA/English Portal. March 31, 2017.
- ↑ Nouvelle, L'Usine (August 20, 2020). "La spintronique, une filière d'avenir dans laquelle la France excelle" – via www.usinenouvelle.com.
{{cite journal}}: Cite journal requires|journal=(help) - ↑ Dieny, B.; Prejbeanu, I. L.; Garello, K.; et al. (August 17, 2020). "Opportunities and challenges for spintronics in the microelectronics industry". Nature Electronics. 3 (8): 446–459. doi:10.1038/s41928-020-0461-5. hdl: 10261/234234 . S2CID 225522703 – via www.nature.com.
- ↑ Coughlin, Tom. "MRAM In Perspective". Forbes.
- ↑ Leulmi, Selma; Chauchet, Xavier; Morcrette, Melissa; et al. (September 24, 2015). "Triggering the apoptosis of targeted human renal cancer cells by the vibration of anisotropic magnetic particles attached to the cell membrane". Nanoscale. 7 (38): 15904–15914. Bibcode:2015Nanos...715904L. doi:10.1039/C5NR03518J. PMID 26364870 – via pubs.rsc.org.
- ↑ "IEEE Fellows From the Magnetics Society". ieeemagnetics.org.
- ↑ "Thematic Prize 2015 Adrien Constantin de Magny awarded to Bernard DIENY by the French Sciences Academy". December 11, 2015.
- ↑ "Previous achievement award winners". ieeemagnetics.org.
- ↑ "Trois nouvelles promotions des ordres nationaux | La grande chancellerie". www.legiondhonneur.fr (in French). Retrieved 2025-01-18.
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