Combustion chemical vapor deposition (CCVD) is a chemical process by which thin-film coatings are deposited onto substrates in the open atmosphere.
In the 1980s initial attempts were performed to improve the adhesion of metal-plastic composites in dental ceramics using flame-pyrolytically deposited silicon dioxide (SiO2). [1] The silicoater process derived from these studies provided a starting point in the development of CCVD processes. This process was constantly developed and new applications for flame-pyrolytically deposited SiO2 layers where found. At this time, the name "Pyrosil" was coined for these layers. Newer and ongoing studies deal with deposition of other materials (vide infra).
In the CCVD process, a precursor compound, usually a metal-organic compound or a metal salt, is added to the burning gas. The flame is moved closely above the surface to be coated. The high energy within the flame converts the precursors into highly reactive intermediates, which readily react with the substrate, forming a firmly adhering deposit. The microstructure and thickness of the deposited layer can be controlled by varying process parameters such as speed of substrate or flame, number of passes, substrate temperature and distance between flame and substrate. CCVD can produce coatings with orientation from preferred to epitaxial, and can produce conformal layers less than 10 nm thick. Thus, CCVD technique is a true vapor deposition process for making thin film coatings. [2] [3] The CCVD coating process has the ability to deposit thin films in the open atmosphere [4] using inexpensive precursor chemicals in solution leading to continuous, production-line manufacturing. It does not require post-deposition treatment e.g., annealing. The throughput potential is high. Coatings can be deposited at substantial temperatures, for example, alpha-alumina was deposited on Ni-20Cr at temperatures between 1050 and 1125 C. [5] A 1999 review article summarizes the various oxide coatings that had been deposited to date, which included Al2O3, Cr2O3, SiO2, CeO2, some spinel oxides (MgAl2O4, NiAl2O4), and yttria stabilized zirconia (YSZ). [6]
The so-called remote combustion chemical vapour deposition is a new variant of the classical CCVD process. It likewise uses flames to deposit thin films, however, this method is based on other chemical reaction mechanisms and offers further abilities for deposition of layer systems which are not practicable by means of CCVD, e.g. titanium dioxide.
Layer material | Application |
---|---|
SiO2 | – Silicon dioxide layers are the most commonly deposited layers. Freshly deposited layers are highly reactive and can thus serve as adhesion promoting layers for polymer coatings and bondings. Adhesion can be further improved by application of additional silane-based adhesion promoters such as glymo (glycidoxypropyl trimethoxysilane). – modification of optical properties (e.g. transmission enhancement) – barrier layers against gases such as O2 (e.g. as a protective layer on an alloy) [7] and ions such as Na+ |
WOx, MoOx | – chromogenic materials in "intelligent windows“ |
ZnO | – semiconductor – component in transparent conducting oxides (TCO) such as aluminum-doped zinc-oxide (AZO) |
ZrO2 | – layer protecting against mechanical damages (e.g. abrasion, scratches) |
SnO2 | – component in various transparent conducting oxides, such as tin-doped indium-oxide (ITO) and fluorine doped tin oxide (FTO) |
TiO2 | – photo catalytic layers |
Ag | – good electric conductivity – heat protection glass – antibacterial coatings |
Al2O3 | – protection against corrosion of alloys such as Ni-20Cr, [8] protection against corrosion of glass. [9] |
Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films.
Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 kg/m3 (22 lb/cu yd). It is one of the densest known gases under standard conditions. WF6 is commonly used by the semiconductor industry to form tungsten films, through the process of chemical vapor deposition. This layer is used in a low-resistivity metallic "interconnect". It is one of seventeen known binary hexafluorides.
A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, LEDs, optical coatings, hard coatings on cutting tools, and for both energy generation and storage. It is also being applied to pharmaceuticals, via thin-film drug delivery. A stack of thin films is called a multilayer.
Plating is a finishing process in which a metal is deposited on a surface. Plating has been done for hundreds of years; it is also critical for modern technology. Plating is used to decorate objects, for corrosion inhibition, to improve solderability, to harden, to improve wearability, to reduce friction, to improve paint adhesion, to alter conductivity, to improve IR reflectivity, for radiation shielding, and for other purposes. Jewelry typically uses plating to give a silver or gold finish.
A superalloy, or high-performance alloy, is an alloy with the ability to operate at a high fraction of its melting point. Key characteristics of a superalloy include mechanical strength, thermal creep deformation resistance, surface stability, and corrosion and oxidation resistance.
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesizing nanomaterials.
Parylene is the common name of a polymer whose backbone consists of para-benzenediyl rings –C
6H
4– connected by 1,2-ethanediyl bridges –CH
2–CH
2–. It can be obtained by polymerization of para-xylyleneH
2C=C
6H
4=CH
2.
Electron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase. These atoms then precipitate into solid form, coating everything in the vacuum chamber with a thin layer of the anode material.
Vacuum deposition is a group of processes used to deposit layers of material atom-by-atom or molecule-by-molecule on a solid surface. These processes operate at pressures well below atmospheric pressure. The deposited layers can range from a thickness of one atom up to millimeters, forming freestanding structures. Multiple layers of different materials can be used, for example to form optical coatings. The process can be qualified based on the vapor source; physical vapor deposition uses a liquid or solid source and chemical vapor deposition uses a chemical vapor.
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a vapor phase and then back to a thin film condensed phase. The most common PVD processes are sputtering and evaporation. PVD is used in the manufacturing of items which require thin films for optical, mechanical, electrical, acoustic or chemical functions. Examples include semiconductor devices such as thin-film solar cells, microelectromechanical devices such as thin film bulk acoustic resonator, aluminized PET film for food packaging and balloons, and titanium nitride coated cutting tools for metalworking. Besides PVD tools for fabrication, special smaller tools used mainly for scientific purposes have been developed.
Thermal spraying techniques are coating processes in which melted materials are sprayed onto a surface. The "feedstock" is heated by electrical or chemical means.
Thermal barrier coatings (TBCs) are advanced materials systems usually applied to metallic surfaces on parts operating at elevated temperatures, such as gas turbine combustors and turbines, and in automotive exhaust heat management. These 100 μm to 2 mm thick coatings of thermally insulating materials serve to insulate components from large and prolonged heat loads and can sustain an appreciable temperature difference between the load-bearing alloys and the coating surface. In doing so, these coatings can allow for higher operating temperatures while limiting the thermal exposure of structural components, extending part life by reducing oxidation and thermal fatigue. In conjunction with active film cooling, TBCs permit working fluid temperatures higher than the melting point of the metal airfoil in some turbine applications. Due to increasing demand for more efficient engines running at higher temperatures with better durability/lifetime and thinner coatings to reduce parasitic mass for rotating/moving components, there is significant motivation to develop new and advanced TBCs. The material requirements of TBCs are similar to those of heat shields, although in the latter application emissivity tends to be of greater importance.
Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV. The sputtered ions can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber. Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film.
Substrate is a term used in materials science and engineering to describe the base material on which processing is conducted. Surfaces have different uses, including producing new film or layers of material and being a base to which another substance is bonded.
Electrostatic spray-assisted vapour deposition (ESAVD) is a technique to deposit both thin and thick layers of a coating onto various substrates. In simple terms chemical precursors are sprayed across an electrostatic field towards a heated substrate, the chemicals undergo a controlled chemical reaction and are deposited on the substrate as the required coating. Electrostatic spraying techniques were developed in the 1950s for the spraying of ionised particles on to charged or heated substrates.
Zirconium diboride (ZrB2) is a highly covalent refractory ceramic material with a hexagonal crystal structure. ZrB2 is an ultra-high temperature ceramic (UHTC) with a melting point of 3246 °C. This along with its relatively low density of ~6.09 g/cm3 (measured density may be higher due to hafnium impurities) and good high temperature strength makes it a candidate for high temperature aerospace applications such as hypersonic flight or rocket propulsion systems. It is an unusual ceramic, having relatively high thermal and electrical conductivities, properties it shares with isostructural titanium diboride and hafnium diboride.
Chemical Bath Deposition, also called Chemical Solution Deposition and CBD, is a method of thin-film deposition, using an aqueous precursor solution. Chemical Bath Deposition typically forms films using heterogeneous nucleation, to form homogeneous thin films of metal chalcogenides and many less common ionic compounds. Chemical Bath Deposition produces films reliably, using a simple process with little infrastructure, at low temperature (<100˚C), and at low cost. Furthermore, Chemical Bath Deposition can be employed for large-area batch processing or continuous deposition. Films produced by CBD are often used in semiconductors, photovoltaic cells, and supercapacitors, and there is increasing interest in using Chemical Bath Deposition to create nanomaterials.
Tantalum(V) ethoxide is a metalorganic compound with formula Ta2(OC2H5)10, often abbreviated as Ta2(OEt)10. It is a colorless solid that dissolves in some organic solvents but hydrolyzes readily. It is used to prepare films of tantalum(V) oxide.
Liquid–feed flame spray pyrolysis (LF-FSP) is one of the most recent iterations in flame spray pyrolysis (FSP) powder production technology. FSP produces metal oxide powders from highly volatile gaseous metal chlorides that are decomposed/oxidized in hydrogen-oxygen flames to form nano-oxide powders. However, products made from FSP's vapor-phase process are limited to Al-, Ti-, Zr-, and Si-based oxides from their metal chlorides. Thus, interest in producing more complex materials required a new methodology, LF-FSP.
Molecular layer deposition (MLD) is a vapour phase thin film deposition technique based on self-limiting surface reactions carried out in a sequential manner. Essentially, MLD resembles the well established technique of atomic layer deposition (ALD) but, whereas ALD is limited to exclusively inorganic coatings, the precursor chemistry in MLD can use small, bifunctional organic molecules as well. This enables, as well as the growth of organic layers in a process similar to polymerization, the linking of both types of building blocks together in a controlled way to build up organic-inorganic hybrid materials.
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