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James J. Coleman [1] (born May 15, 1950 in Chicago, IL) is an electrical engineer who worked at Bell Labs, Rockwell International, and the University of Illinois, Urbana. He is best known for his work on semiconductor lasers, materials and devices including strained-layer indium gallium arsenide lasers and selective area epitaxy.[ citation needed ] Coleman is a Fellow of the IEEE and a member of the US National Academy of Engineering. [2]
James J. Coleman [3] was born in the Garfield Ridge neighborhood of Chicago, Illinois and went to St. Daniel the Prophet elementary school and St. Laurence high school. He was the eldest son of Harry A. Coleman and Lorita M. Kelly. He studied electrical engineering at the University of Illinois, Urbana graduating with a BSEE in 1972. He stayed on at Illinois and was granted an MSEE in 1973 under the direction of O.L. Gaddy. Continuing at Illinois he did his PhD research under the direction of Nick Holonyak, writing a thesis on room temperature visible semiconductor diode lasers. He received his PhD from Illinois in 1975.
Coleman joined Bell Labs, Murray Hill in 1976, where his initial assignment was in the Materials Science Research Department under the direction of Morton B. Panish. His work there involved contributions to the development of 1.3 μm InGaAsP CW room temperature diode telecommunications lasers grown by liquid phase epitaxy (LPE). In 1978, he went to Rockwell International, Anaheim to work with P. Daniel Dapkus on metalorganic chemical vapor deposition (MOCVD), which has become a major process in the manufacture of compound semiconductor devices. They made use of this process to study MOCVD-grown heteroface AlGaAs solar cells, low-threshold single mode AlGaAs-GaAs double heterostructure lasers and quantum well heterostructure laser devices.
In 1982, he returned to the University of Illinois, Urbana where he was professor of Electrical and Computer Engineering and held the Intel Alumni Endowed Chair. He and his students were the first group to define experimentally the ranges of wavelength, threshold current density, and reliability of 980 nm strained-layer InGaAs lasers. They reported high performance narrow linewidth DBR lasers, integrated lasers and other photonic devices by selective-area epitaxy, and detailed the growth processes for patterned quantum dot lasers.
Coleman directed more than twenty-nine PhD thesis students at Illinois, most of who took their first jobs in industry. He was named to the List of Teachers Ranked as Excellent twelve times. [4] He is presently the Intel Alumni Endowed Chair Emeritus in Electrical and Computer Engineering. [5]
In 2013, he joined the University of Texas at Dallas as the Erik Jonsson School Distinguished Chair in Electrical Engineering.
Coleman has had significant involvement in the publications, conference, and leadership activities of the major professional societies associated with the field of photonics (IEEE, OSA, SPIE, APS, and AAAS). He has served the IEEE Photonics Society (formerly the IEEE Lasers and Electro-Optics Society) as an Associate Editor of IEEE Photonics Technology Letters (9 years), a Distinguished Lecturer, an elected member of the Board of Governors, and as Vice-President for Publications. He completed a five-year commitment to the leadership of the society having served as President-Elect, President [6] and Past-President. The society awarded him the Distinguished Service Award in 2008. [7]
Nick Holonyak Jr. was an American engineer and educator. He is noted particularly for his 1962 invention and first demonstration of a semiconductor laser diode that emitted visible light. This device was the forerunner of the first generation of commercial light-emitting diodes (LEDs). He was then working at a General Electric research laboratory near Syracuse, New York. He left General Electric in 1963 and returned to his alma mater, the University of Illinois at Urbana-Champaign, where he later became John Bardeen Endowed Chair in Electrical and Computer Engineering and Physics.
Eli Yablonovitch is an American physicist and engineer who, along with Sajeev John, founded the field of photonic crystals in 1987. He and his team were the first to create a 3-dimensional structure that exhibited a full photonic bandgap, which has been named Yablonovite. In addition to pioneering photonic crystals, he was the first to recognize that a strained quantum-well laser has a significantly reduced threshold current compared to its unstrained counterpart. This is now employed in the majority of semiconductor lasers fabricated throughout the world. His seminal paper reporting inhibited spontaneous emission in photonic crystals is among the most highly cited papers in physics and engineering.
Alfred Yi Cho is a Chinese-American electrical engineer, inventor, and optical engineer. He is the Adjunct Vice President of Semiconductor Research at Alcatel-Lucent's Bell Labs. He is known as the "father of molecular beam epitaxy"; a technique he developed at that facility in the late 1960s. He is also the co-inventor, with Federico Capasso of quantum cascade lasers at Bell Labs in 1994.
Federico Capasso is an applied physicist and is one of the inventors of the quantum cascade laser during his work at Bell Laboratories. He is currently on the faculty of Harvard University.
Isamu Akasaki was a Japanese engineer and physicist, specializing in the field of semiconductor technology and Nobel Prize laureate, best known for inventing the bright gallium nitride (GaN) p-n junction blue LED in 1989 and subsequently the high-brightness GaN blue LED as well.
Milton Feng co-created the first transistor laser, working with Nick Holonyak in 2004. The paper discussing their work was voted in 2006 as one of the five most important papers published by the American Institute of Physics since its founding 75 years ago. In addition to the invention of transistor laser, he is also well known for inventions of other "major breakthrough" devices, including the world's fastest transistor and light-emitting transistor (LET). As of May, 2009 he is a professor at the University of Illinois at Urbana–Champaign and holds the Nick Holonyak Jr. Endowed Chair Professorship.
Charles H. Henry was an American physicist. He was born in Chicago, Illinois. He received an M.S. degree in physics in 1959 from the University of Chicago, and a Ph.D. degree in physics in 1965 from the University of Illinois, under the direction of Charlie Slichter. In March 2008, he was featured in an article in the Physics Illinois News, a publication of the Physics Department of the University of Illinois.
A quantum-well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that are able to emit light efficiently. The wavelength of the light emitted by a quantum-well laser is determined by the width of the active region rather than just the bandgap of the materials from which it is constructed. This means that much shorter wavelengths can be obtained from quantum-well lasers than from conventional laser diodes using a particular semiconductor material. The efficiency of a quantum-well laser is also greater than a conventional laser diode due to the stepwise form of its density of states function.
Ann Catrina Coleman FIEEE FOSA is a Scottish electrical engineer and professor at the University of Texas at Dallas specialising in semiconductor lasers.
Constance J. Chang-Hasnain is chairperson and founder of Berxel Photonics Co. Ltd. and Whinnery Professor Emerita of the University of California, Berkeley. She was President of Optica in 2021.
Sorab (Soli) K. Ghandhi was a professor Emeritus at Rensselaer Polytechnic Institute (RPI) known for his pioneering work in electrical engineering and microelectronics education, and in the research and development of Organometallic Vapor Phase Epitaxy (OMVPE) for compound semiconductors. He was the recipient of the IEEE Education Award "For pioneering contributions to semiconductor and microelectronics education" in 2010.
Transistor laser is a semiconductor device that functions as a transistor with an electrical output and an optical output, as opposed to the typical two electrical outputs. This optical output separates it from typical transistors and, because optical signals travel faster than electrical signals, has the potential to speed up computing immensely. Researchers who discovered the transistor laser developed a new model of Kirchhoff's current law to better model the behavior of simultaneous optical and electrical output.
Shun Lien Chuang was a Taiwanese-American electrical engineer, optical engineer, and physicist. He was a Fellow of the IEEE, OSA, APS and JSPS, and professor at the University of Illinois at Urbana-Champaign.
John Michael Dallesasse is a Professor of Electrical and Computer Engineering at the University of Illinois at Urbana–Champaign where his research is focused on silicon photonic integrated circuits (PICs), nanophotonics, semiconductor lasers / transistor lasers and photonics-electronics integration. He has over 60 publications and presentations, and holds 29 issued patents.
Manijeh Razeghi is an Iranian-American scientist in the fields of semiconductors and optoelectronic devices. She is a pioneer in modern epitaxial techniques for semiconductors such as low pressure metalorganic chemical vapor deposition (MOCVD), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), GasMBE, and MOMBE. These techniques have enabled the development of semiconductor devices and quantum structures with higher composition consistency and reliability, leading to major advancement in InP and GaAs based quantum photonics and electronic devices, which were at the core of the late 20th century optical fiber telecommunications and early information technology.
John E. Bowers is an American physicist, engineer, researcher and educator. He holds the Fred Kavli Chair in Nanotechnology, the director of the Institute for Energy Efficiency and a distinguished professor in the Departments of Electrical and Computer Engineering and Materials at University of California, Santa Barbara. He was the deputy director of American Institute of Manufacturing of Integrated Photonics from 2015 to 2022.
Peter J. Delfyett Jr is an American engineer and Pegasus Professor and Trustee Chair Professor of Optics, ECE & Physics at the University of Central Florida College of Optics and Photonics.
Aristos Christou is an American engineer and scientist, academic professor and researcher. He is a Professor of Materials Science, Professor of Mechanical Engineering and Professor of Reliability Engineering at the University of Maryland.
Carmen S. Menoni is an Argentine-American physicist who is the University Distinguished Professor at Colorado State University. Her research considers oxide materials for interference coatings and spectrometry imaging. She is a Fellow of the Institute of Electrical and Electronics Engineers, American Physical Society, Optica, and SPIE. Menoni served as the President of the IEEE Photonics Society from 2020 to 2021.
Xiuling Li is a distinguished electrical and computer engineering professor in the field of nanostructured semiconductor devices. She is currently the Temple Foundation Endowed Professorship No. 3 in Electrical and Computer Engineering and Fellow of the Dow Professor in Chemistry at the University of Texas at Austin. Previously, she was a Donald Biggar Willet Professor in Electrical and Computer Engineering and Interim Director of the Nick Holonyak Jr. Micro and Nanotechnology Laboratory at the University of Illinois at Urbana-Champaign.
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