Josef Lutz

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Josef Lutz (born 1954 in Ellwangen (Jagst)) is a German physicist and electrical engineer.

Contents

Career

Lutz grew up in a small village called Baldern [1] in the southern part of Germany, his father was smith and farmer. In 1973, Lutz received his high-school diploma from the Theodor-Heuss-Gymnasium, [2] Aalen. He studied Physics at the University of Stuttgart and received his Diploma in Physics in 1982. After his military service he joined Semikron Electronics in Nuremberg. The main focus of his work was on Gate turn-off thyristor and fast diodes. In 1999, he graduated as PhD in Electrical Engineering from the Technische Universität Ilmenau, [3] Germany. Since August 2001, he has been Professor of the Chair of Power Electronics and Electromagnetic Compatibility at TU Chemnitz. He is senior member of IEEE, member of the board of directors of the PCIM Europe, [4] member of the board of directors of the ZfM, of the International Steering Committee of the EPE, the Technical Committee of the ISPSD, the Program Committee of the ISPS, [5] the Technical Program Committee of the CIPS [6] and member of the Editorial Advisory Board of Microelectronics Reliability. In 2005, he was awarded with the degree of Honorable Professor by the North-Caucasus Federal University, Russia. [7] Josef Lutz is among the top 1 percent of the world's most cited researchers in their field. [8] [9]

Inventions

Lutz invented the Controlled Axial Lifetime (CAL) diode, [10] a fast, soft freewheeling diode with the best properties in the world. The CAL diode was the first diode with soft recovery behavior under all application relevant conditions. It allows to use the fast switching capability of the IGBT. It has been produced in high volumes since 1995. Due to its lower conduction losses, the CAL diode has led to energy savings in the range of several large power plants in the GW-Range. Lutz is inventor or co-inventor of more than 25 patents held by Semikron and Infineon.

Scientific work

Lutz´s university research focuses on ruggedness of power semiconductor devices, on packaging related reliability as well as on electromobility. He is involved in several national and international research projects. Lutz has published more than 270 scientific articles and conference contributions. His main publication is the book "Semiconductor Power Devices – Physics, Characteristics, Reliability", printed in German (first edition 2006, second edition 2012), and together with Heinrich Schlangenotto, Uwe Scheuermann and Rik De Doncker [11] in English (first edition 2011, second edition 2018) and in Chinese (2013). [12]

International electrical engineer’s education

At every PCIM Conference [13] Lutz is instructor of the tutorials on "Reliability of IGBT Power Modules". Several of his statements have been published in the PCIM Europe Community Dialogue. [14] Additionally, he gave several tutorials on "Power Device Ruggedness" and on "Transit Time Oscillations in IGBT Power Modules" in Germany, France, Norway and even three times invited in Japan. In September 2017, Lutz received the international Outstanding Achievements Award in the field of Power Electronics at the European Conference on Power Electronics and Applications (EPE 2017). [15]

Critical science

Lutz is one of the speakers of the Open Academy, [16] an institution for advanced and critical science. He is opponent of the Big Bang theory. He was one of the speakers at the 1st Crisis in Cosmology Conference, [17] whose proceedings were published by the American Institute of Physics. A further critical science conference contribution is "Objections against the current limits for microwave radiation". [18] Lutz is strongly engaged in environmental protection activities.

Related Research Articles

Diode Electronic component that only allows current to flow in one direction

A diode is a two-terminal electronic component that conducts current primarily in one direction ; it has low resistance in one direction, and high resistance in the other.

Electronics Branch of physics and electrical engineering

The field of electronics is a branch of physics and electrical engineering that deals with the emission, behaviour and effects of electrons using electronic devices. Electronics uses active devices to control electron flow by amplification and rectification, which distinguishes it from classical electrical engineering, which only uses passive effects such as resistance, capacitance and inductance to control electric current flow.

Transistor Solid-state electrically operated switch also used as an amplifier

A transistor is a semiconductor device used to amplify or switch electrical signals and power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits.

Semiconductor device Electronic component that exploits the electronic properties of semiconductor materials

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum or as free electrons and ions through an ionized gas.

Insulated-gate bipolar transistor Type of solid state switch

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Opto-electronics is the study and application of electronic devices and systems that find, detect and control light, usually considered a sub-field of photonics. In this context, light often includes invisible forms of radiation such as gamma rays, X-rays, ultraviolet and infrared, in addition to visible light. Optoelectronic devices are electrical-to-optical or optical-to-electrical transducers, or instruments that use such devices in their operation.

Thyristor Type of solid state switch

A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch, conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reversed biased, or until the voltage is removed. There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls the larger current of the Anode to Cathode path. In a two-lead thyristor, conduction begins when the potential difference between the Anode and Cathode themselves is sufficiently large.

A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics. Such a device is also called a power device or, when used in an integrated circuit, a power IC.

Power module

A power module or power electronic module provides the physical containment for several power components, usually power semiconductor devices. These power semiconductors are typically soldered or sintered on a power electronic substrate that carries the power semiconductors, provides electrical and thermal contact and electrical insulation where needed. Compared to discrete power semiconductors in plastic housings as TO-247 or TO-220, power packages provide a higher power density and are in many cases more reliable.

Dmitri Z. Garbuzov Russian-born American inventor

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Semikron

Semikron is a German-based independent manufacturer of power semiconductor components. The company was founded in 1951 by Dr. Friedrich Josef Martin in Nuremberg. In 2019, the company has a staff of more than 3,000 people in 24 subsidiaries (world-wide) with production sites in Germany, Brazil, China, France, India, Italy, Slovakia and the USA.

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Bantval Jayant Baliga is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).

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Mohamed M. Atalla Egyptian engineer, physical chemist, cryptographer, inventor and entrepreneur

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Proton-Electrotex

Joint Stock Company "Proton-Electrotex" is a Russian company mainly involved in development, manufacturing and sales of bipolar power semiconductor devices — diodes and thyristors, power assemblies and IGBT modules. The company is located in Orel and is one of the largest companies in Orel oblast. Total area of the premises exceeds 15 000 m2

Igor Grekhov

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Paul R. Berger American electrical engineer

Paul R. Berger is a professor in electrical and computer engineering at Ohio State University and physics, and a distinguished visiting professor (Docent) at Tampere University in Finland, recognized for his work on self-assembled quantum dots under strained-layer epitaxy, quantum tunneling based semiconductor devices and solution processable flexible electronics.

References

  1. ↑ "Baldern.eu". www.baldern.eu. Retrieved 2016-02-17.
  2. ↑ "Theodor-Heuss-Gymnasium Aalen". www.thg-aalen.de. Retrieved 2016-02-17.
  3. ↑ "TU Ilmenau". www.tu-ilmenau.de. Retrieved 2018-10-30.
  4. ↑ "PCIM Europe". www.pcim.mesago.com. Retrieved 2018-10-30.
  5. ↑ "Archived copy". Archived from the original on 2016-02-06. Retrieved 2016-01-21.{{cite web}}: CS1 maint: archived copy as title (link)
  6. ↑ "CIPS 2018 – Welcome".
  7. ↑ Curriculum Vitae. "CV of Josef Lutz at TU Chemnitz". www.tu-chemnitz.de. Retrieved 2016-02-04.
  8. ↑ "World Researcher" (PDF). Retrieved 2021-01-15.
  9. ↑ Baas, Jeroen; Boyack, Kevin; Ioannidis, John P. A. (2020-08-10). "Bibliometrics". Data for "Updated science-wide author databases of standardized citation indicators". Vol. 2. Mendeley. doi:10.17632/btchxktzyw.2.
  10. ↑ J. Lutz. "Advantages of the New Controlled Axial Lifetime Diode". ResearchGate.
  11. ↑ Faculty of Electrical Engineering and Information Technology. "Rik W. De Doncker – RWTH AACHEN UNIVERSITY Faculty of Electrical Engineering and Information Technology – English".
  12. ↑ Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker: "Semiconductor Power Devices – Physics, Characteristics, Reliability". Springer-Verlag Berlin Heidelberg, 2011
  13. ↑ "Welcome – PCIM Europe 2017 – Mesago". www.mesago.de. Retrieved 2017-04-12.
  14. ↑ "Community-Dialog – PCIM Europe 2017 – Mesago". www.mesago.de. Retrieved 2017-04-12.
  15. ↑ "Auszeichnung für Chemnitzer Elektrotechniker".
  16. ↑ "Offene Akademie".
  17. ↑ José B. Almeida and Eric J. Lerner: 1st Crisis in Cosmology Conference, CCC-1. AIP Conference Proceedings, Vol. 822
  18. ↑ Lutz, Josef; Adlkofer, Franz. "Objections against the current limits for microwave radiation. Proceedings of WFMN07, III, A1, pp. 119–123" (PDF).
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