There are several ways to organise memories with respect to the way they are connected to the cache:
The memory is one word wide and connected via a one-word-wide bus to the cache.
The memory is more than one word wide (usually four words wide) and connected by an equally wide bus to the low level cache (which is also wide). From the cache multiple busses of one word wide go to a MUX which selects the correct bus to connect to the high level cache.
There are several memory banks which are one word wide, and one word wide bus. There is some logic in the memory that selects the correct bank to use when the memory gets accessed by the cache.
Memory interleaving is a way to distribute individual addresses over memory modules. Its aim is to keep the most of modules busy as computations proceed. With memory interleaving, the low-order k bits of the memory address generally specify the module on several buses.
Double Data Rate Synchronous Dynamic Random-Access Memory is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM. None of its successors are forward or backward compatible with DDR1 SDRAM, meaning DDR2, DDR3, DDR4 and DDR5 memory modules will not work on DDR1-equipped motherboards, and vice versa.
Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory, since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.
Synchronous dynamic random-access memory is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal.
A DIMM is a popular type of memory module used in computers. It is a printed circuit board with one or both sides holding DRAM chips and pins. The vast majority of DIMMs are manufactured in compliance with JEDEC memory standards, although there are proprietary DIMMs. DIMMs come in a variety of speeds and capacities, and are generally one of two lengths: PC, which are 133.35 mm (5.25 in), and laptop (SO-DIMM), which are about half the length at 67.60 mm (2.66 in).
A SIMM is a type of memory module used in computers from the early 1980s to the early 2000s. It is a printed circuit board on which has random-access memory attached to one or both sides. It differs from a dual in-line memory module (DIMM), the most predominant form of memory module since the late 1990s, in that the contacts on a SIMM are redundant on both sides of the module. SIMMs were standardised under the JEDEC JESD-21C standard.
In computer science, distributed shared memory (DSM) is a form of memory architecture where physically separated memories can be addressed as a single shared address space. The term "shared" does not mean that there is a single centralized memory, but that the address space is shared—i.e., the same physical address on two processors refers to the same location in memory. Distributed global address space (DGAS), is a similar term for a wide class of software and hardware implementations, in which each node of a cluster has access to shared memory in addition to each node's private memory.
The DECstation was a brand of computers used by DEC, and refers to three distinct lines of computer systems—the first released in 1978 as a word processing system, and the latter two both released in 1989. These comprised a range of computer workstations based on the MIPS architecture and a range of PC compatibles. The MIPS-based workstations ran ULTRIX, a DEC-proprietary version of UNIX, and early releases of OSF/1.
A CPU cache is a hardware cache used by the central processing unit (CPU) of a computer to reduce the average cost to access data from the main memory. A cache is a smaller, faster memory, located closer to a processor core, which stores copies of the data from frequently used main memory locations. Most CPUs have a hierarchy of multiple cache levels, with different instruction-specific and data-specific caches at level 1. The cache memory is typically implemented with static random-access memory (SRAM), in modern CPUs by far the largest part of them by chip area, but SRAM is not always used for all levels, or even any level, sometimes some latter or all levels are implemented with eDRAM.
The Q-bus, also known as the LSI-11 Bus, is one of several bus technologies used with PDP and MicroVAX computer systems previously manufactured by the Digital Equipment Corporation of Maynard, Massachusetts.
Column address strobe latency, also called CAS latency or CL, is the delay in clock cycles between the READ command and the moment data is available. In asynchronous DRAM, the interval is specified in nanoseconds. In synchronous DRAM, the interval is specified in clock cycles. Because the latency is dependent upon a number of clock ticks instead of absolute time, the actual time for an SDRAM module to respond to a CAS event might vary between uses of the same module if the clock rate differs.
XDR DRAM is a high-performance dynamic random-access memory interface. It is based on and succeeds RDRAM. Competing technologies include DDR2 and GDDR4.
The R10000, code-named "T5", is a RISC microprocessor implementation of the MIPS IV instruction set architecture (ISA) developed by MIPS Technologies, Inc. (MTI), then a division of Silicon Graphics, Inc. (SGI). The chief designers are Chris Rowen and Kenneth C. Yeager. The R10000 microarchitecture is known as ANDES, an abbreviation for Architecture with Non-sequential Dynamic Execution Scheduling. The R10000 largely replaces the R8000 in the high-end and the R4400 elsewhere. MTI was a fabless semiconductor company; the R10000 was fabricated by NEC and Toshiba. Previous fabricators of MIPS microprocessors such as Integrated Device Technology (IDT) and three others did not fabricate the R10000 as it was more expensive to do so than the R4000 and R4400.
Error correction code memory is a type of computer data storage that uses an error correction code (ECC) to detect and correct n-bit data corruption which occurs in memory.
DEC 3000 AXP was the name given to a series of computer workstations and servers, produced from 1992 to around 1995 by Digital Equipment Corporation. The DEC 3000 AXP series formed part of the first generation of computer systems based on the 64-bit Alpha AXP architecture. Supported operating systems for the DEC 3000 AXP series were DEC OSF/1 AXP and OpenVMS AXP.
A memory bank is a logical unit of storage in electronics, which is hardware-dependent. In a computer, the memory bank may be determined by the memory controller along with physical organization of the hardware memory slots. In a typical synchronous dynamic random-access memory (SDRAM) or double data rate SDRAM, a bank consists of multiple rows and columns of storage units, and is usually spread out across several chips. In a single read or write operation, only one bank is accessed, therefore the number of bits in a column or a row, per bank and per chip, equals the memory bus width in bits. The size of a bank is further determined by the number of bits in a column and a row, per chip, multiplied by the number of chips in a bank.
The DEC 7000 AXP and DEC 10000 AXP are a series of high-end multiprocessor server computers developed and manufactured by Digital Equipment Corporation, introduced on 10 November 1992. These systems formed part of the first generation of systems based on the 64-bit Alpha AXP architecture and at the time of introduction, ran Digital's OpenVMS AXP operating system, with DEC OSF/1 AXP available in March 1993. They were designed in parallel with the VAX 7000 and VAX 10000 minicomputers, and are identical except for the processor module(s) and supported bus interfaces. A field upgrade from a VAX 7000/10000 to a DEC 7000/10000 AXP was possible by means of swapping the processor boards.
The Challenge, code-named Eveready and Terminator, is a family of server computers and supercomputers developed and manufactured by Silicon Graphics in the early to mid-1990s that succeeded the earlier Power Series systems. The Challenge was later succeeded by the NUMAlink-based Origin 200 and Origin 2000 in 1996.
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate.
This glossary of computer hardware terms is a list of definitions of terms and concepts related to computer hardware, i.e. the physical and structural components of computers, architectural issues, and peripheral devices.
In the design of modern computers, memory geometry describes the internal structure of random-access memory. Memory geometry is of concern to consumers upgrading their computers, since older memory controllers may not be compatible with later products. Memory geometry terminology can be confusing because of the number of overlapping terms.