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In the design of modern computers, memory geometry describes the internal structure of random-access memory. Memory geometry is of concern to consumers upgrading their computers, since older memory controllers may not be compatible with later products. Memory geometry terminology can be confusing because of the number of overlapping terms.
The geometry of a memory system can be thought of as a multi-dimensional array. Each dimension has its own characteristics and physical realization. For example, the number of data pins on a memory module is one dimension.
Memory geometry describes the logical configuration of a RAM module, but consumers will always find it easiest to grasp the physical configuration. Much of the confusion surrounding memory geometry occurs when the physical configuration obfuscates the logical configuration. The first defining feature of RAM is form factor. RAM modules can be in compact SO-DIMM form for space constrained applications like laptops, printers, embedded computers, and small form factor computers, and in DIMM format, which is used in most desktops.[ citation needed ]
The other physical characteristics, determined by physical examination, are the number of memory chips, and whether both sides of the memory "stick" are populated. Modules with the number of RAM chips equal to some power of two do not support memory error detection or correction. If there are extra RAM chips (between powers of two), these are used for ECC.
RAM modules are 'keyed' by indentations on the sides, and along the bottom of the module. This designates the technology, and classification of the modules, for instance whether it is DDR2, or DDR3, and whether it is suitable for desktops, or for servers. Keying was designed to make it difficult to install incorrect modules in a system (but there are more requirements than are embodied in keys). It is important to make sure that the keying of the module matches the key of the slot it is intended to occupy.[ citation needed ]
Additional, non-memory chips on the module may be an indication that it was designed[ by whom? ] for high capacity memory systems for servers, and that the module may be incompatible with mass-market systems.[ citation needed ]
As the next section of this article will cover the logical architecture, which covers the logical structure spanning every populated slot in a system, the physical features of the slots themselves become important. By consulting the documentation of your motherboard, or reading the labels on the board itself, you can determine the underlying logical structure of the slots. When there is more than one slot, they are numbered, and when there is more than one channel, the different slots are separated in that way as well – usually color-coded.[ citation needed ]
In the 1990s, specialized computers[ which? ] were released[ citation needed ] where two computers that each had their own memory controller could be networked at such a low level that the software run could use the memory, or CPU of either computer as if they were one unit.[ clarification needed ] With AMD's release of the Opteron, and Intel's corresponding CPU, systems that share more than one memory controller in a single system have become common in applications that require the power of more than one common desktop. For these systems schemes like non-uniform memory architecture are used.[ citation needed ]
Channels are the highest-level structure at the local memory controller level. Modern computers can have two, three or even more channels. It is usually important that, for each module in any one channel, there is a logically identical module in the same location on each of the other populated channels.[ citation needed ]
Module capacity is the aggregate space in a module measured in bytes, or – more generally – in words. Module capacity is equal to the product of the number of ranks and the rank density, and where the rank density is the product of rank depth and rank width. [1] The standard format for expressing this specification is (rank depth) Mbit × (rank width) × (number of ranks).[ citation needed ]
Ranks are sub-units of a memory module that share the same address and data buses and are selected by chip select (CS) in low-level addressing. For example, a memory module with 8 chips on each side, with each chip having an 8-bit-wide data bus, would have one rank for each side for a total of 2 ranks, if we define a rank to be 64 bits wide. A module composed of Micron Technology MT47H128M16 chips with the organization 128 Mib × 16, meaning 128 Mi memory depth and 16-bit-wide data bus per chip; if the module has 8 of these chips on each side of the board, there would be a total of 16 chips × 16-bit-wide data = 256 total bits width of data. For a 64-bit-wide memory data interface, this equates to having 4 ranks, where each rank can be selected by a 2-bit chip select signal. Memory controllers such as the Intel 945 Chipset list the configurations they support: "256-Mib, 512-Mib, and 1-Gib DDR2 technologies for ×8 and ×16 devices", "four ranks for all DDR2 devices up to 512-Mibit density", "eight ranks for 1-Gibit DDR2 devices". As an example, take an i945 memory controller with four Kingston KHX6400D2/1G memory modules, where each module has a capacity of 1 GiB. [2] Kingston describes each module as composed of 16 "64M×8-bit" chips with each chip having an 8-bit-wide data bus. 16 × 8 equals 128, therefore, each module has two ranks of 64 bits each. So, from the MCH point of view there are four 1 GB modules. At a higher logical level, the MCH also sees two channels, each with four ranks.
In contrast, banks, while similar from a logical perspective to ranks, are implemented quite differently in physical hardware. Banks are sub-units inside a single memory chip, while ranks are sub-units composed of a subset of the chips on a module. Similar to chip select, banks are selected by bank select bits, which are part of the memory interface.[ citation needed ]
The lowest form of organization covered by memory geometry, sometimes called "memory device". These are the component ICs that make up each module, or module of RAM. The most important measurement of a chip is its density, measured in bits. Because memory bus width is usually larger than the number of chips, most chips are designed to have width, meaning that they are divided into equal parts internally, and when one address "depth" is called up, instead of returning just one value, more than one value is returned. In addition to the depth, a second addressing dimension has been added at the chip level, banks. Banks allow one bank to be available, while another bank is unavailable because it is refreshing.[ citation needed ]
Some measurements of modules are size, width, speed, and latency. A memory module consists of a multiple of the memory chips to equal the desired module width. So a 32-bit SIMM module could be composed of four 8-bit wide (×8) chips. As noted in the memory channel part, one physical module can be made up of one or more logical ranks. If that 32-bit SIMM were composed of eight 8-bit chips the SIMM would have two ranks.[ citation needed ]
A memory channel is made up of ranks. Physically a memory channel with just one memory module might present itself as having one or more logical ranks.[ citation needed ]
This is the highest level. A typical computer has only a single memory controller with only one or two channels. The logical features section described NUMA configurations, which can take the form of a network of memory controllers. For example, each socket of a two-socket AMD K8 can have a two-channel memory controller, giving the system a total of four memory channels.
Various methods of specifying memory geometry can be encountered, giving different types of information.
(memory depth) × (memory width)
The memory width specifies the data width of the memory module interface in bits. For example, 64 would indicate a 64-bit data width, as is found on non-ECC DIMMs common in SDR and DDR1–4 families of RAM. A memory of width of 72 would indicate an ECC module, with 8 extra bits in the data width for the error-correcting code syndrome. (The ECC syndrome allows single-bit errors to be corrected). The memory depth is the total memory capacity in bits divided by the non-parity memory width. Sometimes the memory depth is indicated in units of Meg (220), as in 32×64 or 64×64, indicating 32 Mi depth and 64 Mi depth respectively.
(memory density)
This is the total memory capacity of the chip. Example: 128 Mib.
(memory depth) × (memory width)
Memory depth is the memory density divided by memory width. Example: for a memory chip with 128 Mib capacity and 8-bit wide data bus, it can be specified as: 16 Meg × 8. Sometimes the "Mi" is dropped, as in 16×8.
(memory depth per bank) × (memory width) × (number of banks)
Example: a chip with the same capacity and memory width as above but constructed with 4 banks would be specified as 4 Mi × 8 × 4.
Double Data Rate Synchronous Dynamic Random-Access Memory is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM. None of its successors are forward or backward compatible with DDR1 SDRAM, meaning DDR2, DDR3, DDR4 and DDR5 memory modules will not work on DDR1-equipped motherboards, and vice versa.
Synchronous dynamic random-access memory is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal.
A DIMM, or Dual In-Line Memory Module, is a popular type of memory module used in computers. It is a printed circuit board with one or both sides holding DRAM chips and pins. The vast majority of DIMMs are standardized through JEDEC standards, although there are proprietary DIMMs. DIMMs come in a variety of speeds and sizes, but generally are one of two lengths - PC which are 133.35 mm (5.25 in) and laptop (SO-DIMM) which are about half the size at 67.60 mm (2.66 in).
Rambus DRAM (RDRAM), and its successors Concurrent Rambus DRAM (CRDRAM) and Direct Rambus DRAM (DRDRAM), are types of synchronous dynamic random-access memory (SDRAM) developed by Rambus from the 1990s through to the early 2000s. The third-generation of Rambus DRAM, DRDRAM was replaced by XDR DRAM. Rambus DRAM was developed for high-bandwidth applications and was positioned by Rambus as replacement for various types of contemporary memories, such as SDRAM.
A SIMM is a type of memory module used in computers from the early 1980s to the early 2000s. It is a printed circuit board on which has random-access memory attached to one or both sides. It differs from a dual in-line memory module (DIMM), the most predominant form of memory module since the late 1990s, in that the contacts on a SIMM are redundant on both sides of the module. SIMMs were standardised under the JEDEC JESD-21C standard.
Double Data Rate 2 Synchronous Dynamic Random-Access Memory is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It is a JEDEC standard (JESD79-2); first published in September 2003. DDR2 succeeded the original DDR SDRAM specification, and was itself succeeded by DDR3 SDRAM in 2007. DDR2 DIMMs are neither forward compatible with DDR3 nor backward compatible with DDR.
In computing, double data rate (DDR) describes a computer bus that transfers data on both the rising and falling edges of the clock signal and hence doubles the memory bandwidth by transferring data twice per clock cycle. This is also known as double pumped, dual-pumped, and double transition. The term toggle mode is used in the context of NAND flash memory.
In the fields of digital electronics and computer hardware, multi-channel memory architecture is a technology that increases the data transfer rate between the DRAM memory and the memory controller by adding more channels of communication between them. Theoretically, this multiplies the data rate by exactly the number of channels present. Dual-channel memory employs two channels. The technique goes back as far as the 1960s having been used in IBM System/360 Model 91 and in CDC 6600.
Registered memory is computer memory that has a register between the DRAM modules and the system's memory controller. A registered memory module places less electrical load on a memory controller than an unregistered one. Registered memory allows a computer system to remain stable with more memory modules than it would have otherwise.
In computing, serial presence detect (SPD) is a standardized way to automatically access information about a memory module. Earlier 72-pin SIMMs included five pins that provided five bits of parallel presence detect (PPD) data, but the 168-pin DIMM standard changed to a serial presence detect to encode more information.
Double Data Rate 3 Synchronous Dynamic Random-Access Memory is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors.
A Fully Buffered DIMM (FB-DIMM) is a type of memory module used in computer systems. It is designed to improve memory performance and capacity by allowing multiple memory modules to be each connected to the memory controller using a serial interface, rather than a parallel one. Unlike the parallel bus architecture of traditional DRAMs, an FB-DIMM has a serial interface between the memory controller and the advanced memory buffer (AMB). Conventionally, data lines from the memory controller have to be connected to data lines in every DRAM module, i.e. via multidrop buses. As the memory width increases together with the access speed, the signal degrades at the interface between the bus and the device. This limits the speed and memory density, so FB-DIMMs take a different approach to solve the problem.
The IBM BladeCenter was IBM's blade server architecture, until it was replaced by Flex System in 2012. The x86 division was later sold to Lenovo in 2014.
A memory controller, also known as memory chip controller (MCC) or a memory controller unit (MCU), is a digital circuit that manages the flow of data going to and from a computer's main memory. When a memory controller is integrated into another chip, such as an integral part of a microprocessor, it is usually called an integrated memory controller (IMC).
In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted.
A memory bank is a logical unit of storage in electronics, which is hardware-dependent. In a computer, the memory bank may be determined by the memory controller along with physical organization of the hardware memory slots. In a typical synchronous dynamic random-access memory (SDRAM) or double data rate SDRAM, a bank consists of multiple rows and columns of storage units, and is usually spread out across several chips. In a single read or write operation, only one bank is accessed, therefore the number of bits in a column or a row, per bank and per chip, equals the memory bus width in bits. The size of a bank is further determined by the number of bits in a column and a row, per chip, multiplied by the number of chips in a bank.
Double Data Rate 4 Synchronous Dynamic Random-Access Memory is a type of synchronous dynamic random-access memory with a high bandwidth interface.
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate.
Double Data Rate 5 Synchronous Dynamic Random-Access Memory is a type of synchronous dynamic random-access memory. Compared to its predecessor DDR4 SDRAM, DDR5 was planned to reduce power consumption, while doubling bandwidth. The standard, originally targeted for 2018, was released on July 14, 2020.
UniDIMM is a specification for dual in-line memory modules (DIMMs), which are printed circuit boards (PCBs) designed to carry dynamic random-access memory (DRAM) chips. UniDIMMs can be populated with either DDR3 or DDR4 chips, with no support for any additional memory control logic; as a result, the computer's memory controller must support both DDR3 and DDR4 memory standards. The UniDIMM specification was created by Intel for its Skylake microarchitecture, whose integrated memory controller (IMC) supports both DDR3 and DDR4 memory technologies.