Micron Technology

Last updated
Micron Technology, Inc.
Public
Traded as
ISIN US5951121038  OOjs UI icon edit-ltr-progressive.svg
Industry Semiconductors
FoundedOctober 5, 1978;41 years ago (1978-10-05)
Headquarters Boise, Idaho, U.S.
Area served
Worldwide
Key people
Sanjay Mehrotra
(President & CEO)
Gurtej Singh Sandhu
(Senior VP) [1]
Robert E. Switz
(Chairman of the Board)
David Zinsner
(CFO)
Products DRAM
Flash memory
SSDs
BrandsBallistix Gaming
Crucial
RevenueIncrease2.svg US$20.32 billion (2017)
Increase2.svg US$5.87 billion (2017)
Increase2.svg US$5.09 billion (2017)
Total assets Increase2.svg US$35.34 billion (2017)
Total equity Increase2.svg US$19.47 billion (2017)
Number of employees
~34,100 (2017)
Website
Footnotes /references
[2]
DDR4 RDIMM featuring both Micron logo (far left) and Crucial logo (centre right). Two 8 GB DDR4-2133 ECC 1.2 V RDIMMs (straightened).jpg
DDR4 RDIMM featuring both Micron logo (far left) and Crucial logo (centre right).
Crucial-branded 525GB solid state drive. Crucial SSD MX300 525GB-8478.jpg
Crucial-branded 525GB solid state drive.
Lexar SDXC UHS-II memory card (front and back) manufactured while the company was owned by Micron. Lexar Professional 1000x 128GB SDXC UHS-II Card (tidied).jpg
Lexar SDXC UHS-II memory card (front and back) manufactured while the company was owned by Micron.
Crucial-branded SD memory cards from 2007. Crucial SD Cards 2007 1GB and 2GB (front).jpg
Crucial-branded SD memory cards from 2007.

Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products are marketed under the brands Crucial [3] and Ballistix. Micron and Intel together created IM Flash Technologies, which produces NAND flash memory. It owned Lexar between 2006 [4] and 2017. [5]

Contents

History

1978–1999

Micron was founded in Boise, Idaho, in 1978 [6] by Ward Parkinson, Joe Parkinson, Dennis Wilson, and Doug Pitman as a semiconductor design consulting company. [7] Startup funding was provided by local Idaho businessmen Tom Nicholson, Allen Noble, Rudolph Nelson, and Ron Yanke. Later it received funding from Idaho billionaire J. R. Simplot, whose fortune was made in the potato business. In 1981, the company moved from consulting to manufacturing with the completion of its first wafer fabrication unit ("Fab 1"), producing 64K DRAM chips.

In 1984, the company went public. [8]

In 1994, founder Joe Parkinson retired as CEO and Steve Appleton took over as Chairman, President, and CEO. [6]

A 1996 3-way merger among ZEOS International, Micron Computer, and Micron Custom Manufacturing Services (MCMS) increased the size and scope of the company; [6] this was followed rapidly with the 1997 acquisition of NetFrame Systems, in a bid to enter the mid-range server industry. [9]

2000–present

In 2000, Gurtej Singh Sandhu and Trung T. Doan at Micron initiated the development of atomic layer deposition high-k films for DRAM memory devices. This helped drive cost-effective implementation of semiconductor memory, starting with 90-nm node DRAM. [10] [11] Pitch double-patterning was also pioneered by Gurtej Singh Sandhu at Micron during the 2000s, leading to the development of 30-nm class NAND flash memory, and it has since been widely adopted by NAND flash and RAM memory manufacturers worldwide. [10] [12]

Micron and Intel created a joint venture in 2005, based in IM Flash Technologies in Lehi, Utah. [13] The two companies formed another joint venture in 2011, IM Flash Singapore, in Singapore. [14] In 2012, Micron became sole owner of this second joint venture. [15]

In 2006, Micron acquired Lexar, an American manufacturer of digital media products. [4]

The company again changed leadership in June 2007 with COO Mark Durcan becoming President. [16]

In 2008, Micron spun off Aptina Imaging, which was acquired by ON Semiconductor in 2014. Micron retained a stake in the spinoff. [17] The core company suffered setbacks, however, requiring layoffs of 15 percent of its workforce in October 2008, [18] [19] during which period the company also announced the purchase of Qimonda's stake in Inotera technologies for $400 million. [20] The trend of layoffs and acquisitions continued in 2009 with the termination of an additional 2,000 employees, [21] [22] and the acquisition of the FLCOS microdisplay company Displaytech. [23] Micron agreed to buy flash-chip maker Numonyx for $1.27 billion in stock in February 2010. [24]

On February 3, 2012, the CEO, Steve Appleton, died in a small Lancair plane crash in Boise, Idaho. [25] [26] [27] Mark Durcan replaced Appleton as the CEO shortly thereafter, [28] eliminating his former title of President. [29]

In the 2012–2014 period, Micron again went through an acquisition-layoff cycle, becoming the majority shareholder of Inotera Memories, purchasing Elpida Memory [30] for $2 billion and the remaining shares in Rexchip, a PC memory chip manufacturing venture between Powerchip and Elpida Memory for $334 million, [31] [32] while announcing plans to lay off approximately 3,000 workers. [33] [34] Through the Elpida acquisition, Micron became a major supplier to Apple Inc. for the iPhone and iPad. [30]

In December 2016, Micron finished acquiring the remaining 67% of Inotera’s stake and made Inotera a 100% subsidiary of Micron in Taiwan. [35]

In April 2017, Micron announced Sanjay Mehrotra as the new President and CEO to replace Mark Durcan. [36] [37]

In June 2017, Micron announced it was discontinuing the Lexar retail removable media storage business and putting some or all it up for sale. [38] In August of that year the Lexar brand was acquired by Longsys, a flash memory company based in Shenzhen, China. [5]

On December 5, 2017, Micron sued rivals United Microelectronics Corporation and Fujian Jinhua Integrated Circuit Co. (JHICC) in the United States District Court for the Northern District of California, alleging infringement on its DRAM patents and intellectual property rights. [39]

In May 2018, Micron Technology and Intel launched QLC NAND memory to increase storage density. [40] The company ranked 150th on the Fortune 500 list of largest United States corporations by revenue. [41]

In February 2019, the first microSD card with a storage capacity of 1 terabyte (TB) was announced by Micron. [42]

As of March 2020, 3.84TB Micron 5210 Ion is the cheapest large capacity SSD in the world. [43]

See also

Related Research Articles

Flash memory Electronic non-volatile computer storage device

Flash memory is an electronic (solid-state) non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory are named after the NAND and NOR logic gates. The individual flash memory cells, consisting of floating-gate MOSFETs, exhibit internal characteristics similar to those of the corresponding gates.

Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM and C-RAM or CRAM is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In the older generation of PCM, heat produced by the passage of an electric current through a heating element generally made of TiN was used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies with the same capability.

The 90 nm process refers to the level of MOSFET (CMOS) fabrication process technology that was commercialized by the 2003–2005 timeframe, by leading semiconductor companies like Toshiba, Sony, Samsung, IBM, Intel, Fujitsu, TSMC, Elpida, AMD, Infineon, Texas Instruments and Micron Technology.

Lexar business enterprise

Lexar is a brand of flash memory products manufactured by the Chinese company Longsys.

The 32 nm node is the step following the 45 nm process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the 32 nm process in 2009. Intel and AMD produced commercial microchips using the 32-nanometre process in the early 2010s. IBM and the Common Platform also developed a 32 nm high-κ metal gate process. Intel began selling its first 32 nm processors using the Westmere architecture on 7 January 2010.

GDDR5, an abbreviation for graphics double data rate type five synchronous dynamic random-access memory, is a modern type of synchronous graphics random-access memory (SGRAM) with a high bandwidth interface designed for use in graphics cards, game consoles, and high-performance computing. It is a type of GDDR SDRAM.

Solid-state drive Data storage device that uses no moving parts

A solid-state drive (SSD) is a solid-state storage device that uses integrated circuit assemblies to store data persistently, typically using flash memory, and functioning as secondary storage in the hierarchy of computer storage. It is also sometimes called a solid-state device or a solid-state disk, even though SSDs lack the physical spinning disks and movable read–write heads used in hard drives ("HDD") or floppy disks.

Elpida Memory, Inc. was a corporation established in 1999 that developed, designed, manufactured and sold dynamic random-access memory (DRAM) products. It was also a semiconductor foundry. With headquarters in Yaesu, Chūō, Tokyo, Japan, it was initially formed under the name NEC Hitachi Memory in 1999 by the merger of the Hitachi and NEC DRAM businesses. In the following year it took on the name Elpida. In 2003, Elpida took over the Mitsubishi DRAM business. In 2004, it listed its shares in the first section of the Tokyo Stock Exchange. In 2012, those shares were delisted as a result of its bankruptcy. In 2013, Elpida was acquired by Micron Technology.

IM Flash Technologies Former Micron-Intel joint venture

IM Flash Technologies, LLC was the semiconductor company founded in January 2006, by Intel Corporation and Micron Technology, Inc. IM Flash produced 3D XPoint used in data centers and high end computers. It had a 300mm wafer fab in Lehi, UT, United States.

In electronics, a multi-level cell (MLC) is a memory cell/element capable of storing more than a single bit of information, compared to a single-level cell (SLC) which can store only one bit per memory cell/element. A memory cell typically consists of a single MOSFET, thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells.

IM Flash Singapore

IM Flash Singapore LLP is a semiconductor company founded in February 2007, by Micron Technology and Intel Corporation. The joint-venture was set up to produce NAND Flash memory for the 2 owners, and was the second site set up, after the success of IM Flash Technologies. It was located in Senoko, Singapore.

A non-volatile dual in-line memory module (NVDIMM) is a type of random-access memory for computers. Non-volatile memory is memory that retains its contents even when electrical power is removed, for example from an unexpected power loss, system crash, or normal shutdown. "Dual in-line" identifies the memory as using the DIMM package. NVDIMMs improve application performance and system crash recovery time. They enhance solid-state drive (SSD) endurance and reliability.

Crossbar is a company based in Santa Clara, California. Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology. The company in 2013 announced its goal was a terabyte of storage on a single integrated circuit, compatible with standard CMOS semiconductor manufacturing processes.

High Bandwidth Memory Type of memory used on processors that require high speed memory

High Bandwidth Memory (HBM) is a high-speed computer memory interface for 3D-stacked SDRAM from Samsung, AMD and SK Hynix. It is used in conjunction with high-performance graphics accelerators, network devices and in some supercomputers. The first HBM memory chip was produced by SK Hynix in 2013, and the first devices to use HBM were the AMD Fiji GPUs in 2015.

3D XPoint Novel computer memory type meant to offer higher speeds than flash memory and lower prices than DRAM

3D XPoint is a non-volatile memory (NVM) technology developed jointly by Intel and Micron Technology. It was announced in July 2015 and is available on the open market under brand names Optane (Intel) and subsequently QuantX (Micron) since April 2017. Bit storage is based on a change of bulk resistance, in conjunction with a stackable cross-gridded data access array. Initial prices are less than dynamic random-access memory (DRAM) but more than flash memory.

ATP Electronics manufacturer of NAND Flash and DRAM memory modules

ATP Electronics is a manufacturer of NAND based storage DRAM modules founded in Silicon Valley in 1991, headquarter was later moved to Taipei, Taiwan. ATP’s product line consist of Industrial grade products, such as SSD, SD / microSD memory cards, along with DRAM products that are used in business industries across Networking, Enterprise Mobility, Automotive industry, Military, IPC/Embedded Systems, Health care, Gaming and The Internet of Things (IoT). Intel's CMTL, one of the largest third party testing lab for Intel server platforms, only recommended two memory modules companies to purchase motherboards in Taiwan, one noted to be ATP Electronics.

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