Moore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship. It is an experience-curve law, a type of law quantifying efficiency gains from experience in production.
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and solid-state drives (SSDs). It is headquartered in Boise, Idaho. Micron's consumer products, including the Ballistix line of memory modules, are marketed under the Crucial brand. Micron and Intel together created IM Flash Technologies, which produced NAND flash memory. It owned Lexar between 2006 and 2017. Micron is the only U.S.-based manufacturer of memory.
SK hynix Inc. is a South Korean supplier of dynamic random-access memory (DRAM) chips and flash memory chips. SK Hynix is one of the world's largest semiconductor vendors.
The transistor count is the number of transistors in an electronic device. It is the most common measure of integrated circuit complexity. The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a die, transistor count does not represent how advanced the corresponding manufacturing technology is. A better indication of this is transistor density which is the ratio of a semiconductor's transistor count to its die area.
A solid-state drive (SSD) is a type of solid-state storage device that uses integrated circuits to store data persistently. It is sometimes called semiconductor storage device, solid-state device, and solid-state disk.
In electronics, a multi-level cell (MLC) is a memory cell capable of storing more than a single bit of information, compared to a single-level cell (SLC), which can store only one bit per memory cell. A memory cell typically consists of a single floating-gate MOSFET, thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells.
Package on a package (PoP) is an integrated circuit packaging method to vertically combine discrete logic and memory ball grid array (BGA) packages. Two or more packages are installed atop each other, i.e. stacked, with a standard interface to route signals between them. This allows higher component density in devices, such as mobile phones, personal digital assistants (PDA), and digital cameras, at the cost of slightly higher height requirements. Stacks with more than 2 packages are uncommon, due to heat dissipation considerations.
Universal Flash Storage (UFS) is a flash storage specification for digital cameras, mobile phones and consumer electronic devices. It was designed to bring higher data transfer speed and increased reliability to flash memory storage, while reducing market confusion and removing the need for different adapters for different types of cards. The standard encompasses both packages permanently embedded within a device (eUFS), and removable UFS memory cards.
A three-dimensional integrated circuit is a MOS integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
UNISOC, formerly Spreadtrum Communications, Inc., is a Chinese fabless semiconductor company headquartered in Shanghai which produces chipsets for mobile phones. UNISOC develops its business in two major fields - consumer electronics and industrial electronics. Consumer electronics includes smartphones, feature phones, smart audio systems, smart wearables and other related devices. Industrial electronics cover fields such as LAN IoT, WAN IoT and smart displays.
Tsinghua Holdings Corp., Ltd. is a wholly owned subsidiary of Tsinghua University, itself a public university in China. The company was established as an in-house asset management company for Tsinghua's subsidiaries that were established in the 1990s by the technology transfer of research to business.
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix. It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers. The first HBM memory chip was produced by SK Hynix in 2013, and the first devices to use HBM were the AMD Fiji GPUs in 2015.
Samsung Electronics Co., Ltd., stylised as SΛMSUNG, is a South Korean multinational major appliance and consumer electronics corporation founded on 13 January 1969 and headquartered in Yeongtong District, Suwon, South Korea. It is currently the pinnacle of the Samsung chaebol, accounting for 70% of the group's revenue in 2012, and has played a key role in the group's corporate governance due to cross ownership. It is majority-owned by foreign investors.
Silicon Motion Technology Corporation, stylized as SiliconMotion, is an American-Taiwanese company involved in developing NAND flash controller integrated circuits (ICs) for solid-state storage devices. The company has claimed to have supplied more NAND flash controllers than any other company, over five billion from 2006 through 2016. They are found in commercial, enterprise, and industrial applications ranging from SSDs, eMMCs, memory cards, and USB flash drives.
ChangXin Memory Technologies is a Chinese semiconductor integrated device manufacturer headquartered in Hefei, Anhui, specializing in the production of DRAM memory.
Tsinghua Unigroup Co., Ltd. is a state-owned Chinese technology and semiconductor manufacturer that also supplies digital infrastructure and services to domestic and global markets. Based in Beijing, it is among the country's largest technology conglomerates; subsidiaries include UNISOC, China's largest mobile phone chip designer. Other core subsidies design and manufacture network equipment and server and storage products, and produce system integration, network security and software applications.
IBM FlashCore Modules (FCM) are solid state technology computer data storage modules using PCI Express attachment and the NVMe command set. They are offered as an alternative to industry-standard 2.5" NVMe SSDs in selected arrays from the IBM FlashSystem family, with raw storage capacities of 4.8 TB, 9.6 TB, 19.2 TB and 38.4 TB. FlashCore modules support hardware self-encryption and real-time inline hardware data compression up to 115.2 TB address space, without performance impact.
The Chinese semiconductor industry, including integrated circuit design and manufacturing, forms a major part of mainland China's information technology industry.
