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Computer data storage or digital data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers.
Computer memory stores information, such as data and programs, for immediate use in the computer. The term memory is often synonymous with the terms RAM,main memory, or primary storage. Archaic synonyms for main memory include core and store.
A field-programmable gate array (FPGA) is a type of configurable integrated circuit that can be repeatedly programmed after manufacturing. FPGAs are a subset of logic devices referred to as programmable logic devices (PLDs). They consist of an array of programmable logic blocks with a connecting grid, that can be configured "in the field" to interconnect with other logic blocks to perform various digital functions. FPGAs are often used in limited (low) quantity production of custom-made products, and in research and development, where the higher cost of individual FPGAs is not as important, and where creating and manufacturing a custom circuit wouldn't be feasible. Other applications for FPGAs include the telecommunications, automotive, aerospace, and industrial sectors, which benefit from their flexibility, high signal processing speed, and parallel processing abilities.
EEPROM or E2PROM (electrically erasable programmable read-only memory) is a type of non-volatile memory. It is used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data indefinitely without electric power.
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data.
Phase-change memory is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride is used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies with the same capability.
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.
Dov Frohman is an Israeli electrical engineer and business executive. A former vice president of Intel Corporation, he is the inventor of the erasable programmable read only memory (EPROM) and the founder and first general manager of Intel Israel. He is also the author of Leadership the Hard Way.
Ferroelectric RAM is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. An FeRAM chip contains a thin film of ferroelectric material, often lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT layer change polarity in an electric field, thereby producing a power-efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making FeRAM a reliable nonvolatile memory.
Reprogrammable memory is type of ROM, more precisely, a type of PROM electronic memory. Re refers to reprogrammable ROM memory. There are two types of RePROM electronic memories:
Read–write memory, or RWM is a type of computer memory that can be easily written to as well as read from using electrical signaling normally associated with running a software, and without any other physical processes. The related storage type RAM means something different; it refers to memory that can access any memory location in a constant amount of time.
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling or hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.
Resistive random-access memory is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications, such as video games, for programmable devices can be distributed as plug-in cartridges containing ROM.
Universal memory refers to a computer data storage device combining the cost benefits of DRAM, the speed of SRAM, the non-volatility of flash memory along with infinite durability, and longevity. Such a device, if it ever becomes possible to develop, would have a far-reaching impact on the computer market. Some doubt that such a type of memory will ever be possible.
Random-access memory is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media, where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Dawon Kahng was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET, along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 and reset to store a logic 0. Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
References
- ↑ Neale, Ronald "Ron" G.; Nelson, D. L.; Moore, Gordon Earle (1970-09-28). "Nonvolatile and reprogrammable, the read-mostly memory is here" (PDF). Electronics . McGraw-Hill. pp. 56–60. S2CID 137556114. Archived from the original (PDF) on 2022-07-07. Retrieved 2020-07-01.
- ↑ Handy, Jim (2018-01-17). "Original PCM Article from 1970". The Memory Guy, Objective Analysis, Semiconductor Market Research. Archived from the original on 2020-07-01. Retrieved 2020-07-01.
- ↑ Bode, Arndt [in German]; Händler, Wolfgang (1980). Written at Erlangen, Germany. Rechnerarchitektur: Grundlagen und Verfahren (in German) (1 ed.). Berlin / Heidelberg, Germany; New York, USA: Springer-Verlag. p. 102. ISBN 3-540-09656-6 . Retrieved 2020-07-01.
[…] RMM (Read mostly memory) oder REPROM (Reprogrammable memory): Semifestspeicher, bei denen das Schreiben möglich, jedoch wesentlich aufwendiger als das Lesen ist (meist um einige Zehnerpotenzen). […]
(xii+278+2 pages) - ↑ Klar, Rainer (1989) [1988-10-01]. "Tabelle 6.2 Beispiele mikroprogrammierter Rechner" [Table 6.2 Examples of micro-programmed computers]. Digitale Rechenautomaten – Eine Einführung in die Struktur von Computerhardware[Digital Computers – An Introduction into the structure of computer hardware]. Sammlung Göschen (in German). Vol. 2050 (4th reworked ed.). Berlin, Germany: Walter de Gruyter & Co. p. 223. ISBN 3-11011700-2.
[…] Honeywell H4200 […] 1966 […] Kernspeicher […] 2 Kerne/Bit […] RMM: Read-mostly-Memory, d.h. Speicher mit langsame[m] Schreiben, aber schnellem Lesen […]
(320 pages) - ↑ Astels, Dave (2020-07-01) [2018-05-02]. "Read Mostly Memory". adafruit. Archived from the original on 2020-07-01. Retrieved 2020-07-01.